Frederick G Robinson

US Patent:

51064715, Apr 21, 1992

Filed:

Apr 2, 1990

Appl. No.:

7/502728

Inventors:

Jeffrey L. Galvin - Mesa AZ
Frederick J. Robinson - Scottsdale AZ
David M. Yee - Phoenix AZ

Assignee:

Motorola, Inc. - Schaumburg IL

International Classification:

C23F 100

US Classification:

20419235

Abstract:

A dry etch process allows fabrication of very small SAW electrodes (less than 1 micron wide) on LiNbO. sub. 3 (lithium niobate) or quartz substrates. In the process, analuminum (Al) layer is disposed on the substrate, and a photoresist layer is applied and exposed in the appropriate pattern. The wafer is then placed in an RIE where the Al is dry etched using a plasma containing chlorine and fluorine. The photoresist is then removed by an oxygen plasma. The oxygen also operates to replace the chlorine ions. By using this process, very precisely shaped electrodes can be formed.

US Patent:

48013501, Jan 31, 1989

Filed:

Dec 29, 1986

Appl. No.:

6/947069

Inventors:

Robert J. Mattox - Tempe AZ
Frederick J. Robinson - Scottsdale AZ

Assignee:

Motorola, Inc. - Schaumburg IL

International Classification:

B44C 122
C03C 1500
H01L 21306

US Classification:

156643

Abstract:

A method for the construction of submicron features using optical lithography technology. A material is deposited on a surface to be etched, this material is partially etched through using optical lithography technology. Sidewalls are deposited to reduce the size of this etched area to the submicron size desired. The etch of the layer is then completed resulting in a submicron mask for the substrate below.

US Patent:

43404561, Jul 20, 1982

Filed:

Nov 2, 1979

Appl. No.:

6/090767

Inventors:

Frederick J. Robinson - Scottsdale AZ
Clarence J. Tracy - Tempe AZ

Assignee:

Motorola, Inc. - Schaumburg IL

International Classification:

H01L 21306

US Classification:

204192E

Abstract:

A method for removing photoresist from a substrate. A substrate to be stripped of photoresist is placed in a metal substrate holder or boat which is subsequently loaded into a plasma reactor. The holder is placed in contact with one electrode of the plasma reactor. The plasma reactor is evacuated and a hydrogen bearing gas is injected into the reactor at a rate to maintain the pressure between 0. 1 and 10 Torr. The photoresist coated substrate is heated to a temperature between 100. degree. C. and 225. degree. C. Power is applied to the plasma reactor to create a hydrogen plasma which reacts with and removes the photoresist. During the removal operation the reflected power from the reactor is monitored to detect the end point of the plasma-photoresist reaction.

US Patent:

42015790, May 6, 1980

Filed:

Jun 5, 1978

Appl. No.:

5/912615

Inventors:

Frederick J. Robinson - Scottsdale AZ
Clarence J. Tracy - Tempe AZ

Assignee:

Motorola, Inc. - Schaumburg IL

International Classification:

G03C 500
C23F 102

US Classification:

430323

Abstract:

A method for removing photoresist from a substrate. A substrate to be stripped of photoresist is placed in a metal substrate holder or boat which is subsequently loaded into a plasma reactor. The holder is placed in contact with one electrode of the plasma reactor. The plasma reactor is evacuated and a hydrogen bearing gas is injected into the reactor at a rate to maintain the pressure between 0. 1 and 10 Torr. The photoresist coated substrate is heated to a temperature between 100. degree. C. and 225. degree. C. Power is applied to the plasma reactor to create a hydrogen plasma which reacts with and removes the photoresist. During the removal operation the reflected power from the reactor is monitored to detect the end point of the plasma-photoresist reaction.

US Patent:

55916767, Jan 7, 1997

Filed:

Mar 16, 1995

Appl. No.:

8/405056

Inventors:

Henry G. Hughes - Scottsdale AZ
Ping-Chang Lue - Scottsdale AZ
Frederick J. Robinson - Scottsdale AZ

Assignee:

Motorola, Inc. - Schaumburg IL

International Classification:

H01L 213105

US Classification:

437195

Abstract:

A semiconductor device having electronic circuitry formed in a semiconductor substrate (11) and separated from an overlying metal interconnect layer (18,18') using a fluorinated polymer dielectric (14,14'). The fluorinated polymer layer (14,14') may be formed directly on metallic surfaces, or formed on a semiconductor or non-metallic surface using an adhesion promoter (13,13'). Once formed, the fluorinated polymer layer (14,14') can be patterned to provide vias, and covered with a patterned metal interconnect layer (18,18').

US Patent:

54422370, Aug 15, 1995

Filed:

Feb 4, 1994

Appl. No.:

8/191736

Inventors:

Henry G. Hughes - Scottsdale AZ
Ping-Chang Lue - Scottsdale AZ
Frederick J. Robinson - Scottsdale AZ

Assignee:

Motorola Inc. - Schaumburg IL

International Classification:

H01L 2342
H01L 2344

US Classification:

257759

Abstract:

A semicondutor device having electronic circuitry formed in a semiconductor substrate (11) and separated from an overlying metal interconnect layer (18, 18') using a fluorinated polymer dielectric (14,14'). The fluorinated polymer layer (14,14') may be formed directly on metallic surfaces, or formed on a semiconductor or non-metallic surface using an adhesion promoter (13,13'). Once formed, the fluorinated polymer layer (14,14') can be patterned to provide vias, and covered with a patterned metal interconnect layer (18, 18').