Frederick W Walker

US Patent:

53043987, Apr 19, 1994

Filed:

Jun 3, 1993

Appl. No.:

8/071516

Inventors:

Wilbur C. Krusell - San Jose CA
James P. Garcia - Sunnyvale CA
Daniel M. Dobkin - Sunnyvale CA
Frederick F. Walker - Ben Lomond CA
Jose F. Casillas - San Jose CA

Assignee:

Watkins Johnson Company - Palo Alto CA

International Classification:

C23C 1600

US Classification:

4272553

Abstract:

A method for depositing silicon dioxide on the surface of a substrate or the like using a nitrogen-containing precursor is disclosed herein. In a preferred implementation the deposition is performed using an atmospheric pressure reactor, into which is directed toward the substrate surface a stream of source gas comprised of ozonated oxygen. A stream of a nitrogen-containing precursor such as, for example, hexamethyldisilazane (HMDS) is also directed into the reactor toward the substrate surface. In addition, a stream of a nitrogen-containing separator gas is directed into the reactor between the streams of precursor and source gases. The inventive deposition method has been shown to result in improved film nucleation on a variety of substrate surfaces.