Fredric D Bailey

US Patent:

6972470, Dec 6, 2005

Filed:

Mar 30, 2004

Appl. No.:

10/814673

Inventors:

Richard B. Irwin - Richardson TX, US
Tony T. Phan - Flower Mound TX, US
Jennifer S. Dumin - Wylie TX, US
Patrick J. Jones - Allen TX, US
Fredric D. Bailey - Irving TX, US

Assignee:

Texas Instruments Incorporated - Dallas TX

International Classification:

H01L027/95

US Classification:

257478, 257473

Abstract:

An embodiment of the invention is a Schottky diode having a semiconductor substrate , a first metal , a barrier layer , and second metal. Another embodiment of the invention is a method of manufacturing a Schottky diode that includes providing a semiconductor substrate , forming a barrier layer over the semiconductor substrate , forming a first metal layer over the semiconductor substrate , annealing the semiconductor substrate to form areas of reacted first metal and areas of un-reacted first metal, and removing selected areas of the un-reacted first metal. The method further includes forming a second metal layer over the semiconductor substrate and annealing the semiconductor substrate to form areas of reacted second metal and areas of un-reacted second metal.

US Patent:

7902055, Mar 8, 2011

Filed:

Mar 30, 2005

Appl. No.:

11/095245

Inventors:

Richard B. Irwin - Richardson TX, US
Tony T. Phan - Flower Mound TX, US
Jennifer S. Dumin - Wylie TX, US
Patrick J. Jones - Allen TX, US
Fredric D. Bailey - Irving TX, US

Assignee:

Texas Instruments Incoprorated - Dallas TX

International Classification:

H01L 29/872
H01L 29/47

US Classification:

438570, 438573, 438575, 438580, 438581, 438583, 257E21047, 257E21359, 257E21368

Abstract:

An embodiment of the invention is a Schottky diode having a semiconductor substrate , a first metal , a barrier layer , and second metal. Another embodiment of the invention is a method of manufacturing a Schottky diode that includes providing a semiconductor substrate , forming a barrier layer over the semiconductor substrate , forming a first metal layer over the semiconductor substrate , annealing the semiconductor substrate to form areas of reacted first metal and areas of un-reacted first metal, and removing selected areas of the un-reacted first metal. The method further includes forming a second metal layer over the semiconductor substrate and annealing the semiconductor substrate to form areas of reacted second metal and areas of un-reacted second metal.

US Patent:

54706610, Nov 28, 1995

Filed:

Jan 7, 1993

Appl. No.:

8/001374

Inventors:

Fredric D. Bailey - Golden CO
Douglas A. Buchanan - Cortlandt Manor NY
Alessandro C. Callegari - Yorktown Heights NY
Howard M. Clearfield - Yorktown Heights NY
Fuad E. Doany - Katonah NY
Donis G. Flagello - Ridgefield CT
Harold J. Hovel - Katonah NY
Douglas C. Latulipe - Danbury CT
Naftali E. Lustig - Croton-on-Hudson NY
Andrew T. S. Pomerene - New Fairfield CT
Sampath Purushothaman - Yorktown Heights NY
Christopher M. Scherpereel - Poughquag NY
David E. Seeger - Congers NY
Jane M. Shaw - Ridgefield CT

Assignee:

International Business Machines Corporation - Armonk NY

International Classification:

B24B 302

US Classification:

428408

Abstract:

The present invention relates to an improved method of depositing a diamond-like carbon film onto a substrate by low temperature plasma-enhanced chemical vapor deposition (PECVD) from a hydrocarbon/helium plasma. More specifically, the diamond like carbon films of the present invention are deposited onto the substrate by employing acetylene which is heavily diluted with helium as the plasma gas. The films formed using the process of the present invention are characterized as being amorphous and having dielectric strengths comparable to those normally observed for diamond films. More importantly, however is that the films produced herein are thermally stable, optically transparent, absorbent in the ultraviolet range and hard thus making them extremely desirable for a wide variety of applications.

US Patent:

55695019, Oct 29, 1996

Filed:

Jun 7, 1995

Appl. No.:

8/483685

Inventors:

Fredric D. Bailey - Golden CO
Douglas A. Buchanan - Cortlandt Manor NY
Alessandro C. Callegari - Yorktown Heights NY
Howard M. Clearfield - Yorktown Heights NY
Fuad E. Doany - Katonah NY
Donis G. Flagello - Ridgefield CT
Harold J. Hovel - Katonah NY
Douglas C. Latulipe - Danbury CT
Naftali E. Lustig - Croton-on-Hudson NY
Andrew T. S. Pomerene - New Fairfield CT
Sampath Purushothaman - Yorktown Heights NY
Christopher M. Scherpereel - Poughquag NY
David E. Seeger - Congers NY
Jane M. Shaw - Ridgefield CT

Assignee:

International Business Machines Corporation - Armonk NY

International Classification:

B05D 306
H05H 124

US Classification:

427577

Abstract:

The present invention relates to an improved method of depositing a diamond-like carbon film onto a substrate by low temperature plasma-enhanced chemical vapor deposition (PECVD) from a hydrocarbon/helium plasma. More specifically, the diamond-like carbon films of the present invention are deposited onto the substrate by employing acetylene which is heavily diluted with helium as the plasma gas. The films formed using the process of the present invention are characterized as being amorphous and having dielectric strengths comparable to those normally observed for diamond films. More importantly, however is that the films produced herein are thermally stable, optically transparent, absorbent in the ultraviolet range and hard thus making them extremely desirable for a wide variety of applications.