Gary D Atkinson

US Patent:

56652534, Sep 9, 1997

Filed:

May 31, 1995

Appl. No.:

8/456211

Inventors:

Randall L. Kubena - Agoura CA
Gary M. Atkinson - Thousand Oaks CA

Assignee:

Hughes Electronics - Los Angeles CA

International Classification:

H01L 21027
H01J 37244

US Classification:

216 41

Abstract:

A tunneling tip sensor and a method of photolithographically fabricating a unitary structure sensor on a semiconductor substrate are disclosed. A cantilever electrode is formed on the substrate with one end suspended above the substrate at a distance from a tunneling electrode so that a tunneling current flows through the cantilever and tunneling electrodes in response to an applied bias voltage. The cantilever and tunneling electrodes form a circuit that produces an output signal. A force applied to the sensor urges the cantilever electrode to deflect relative to the tunneling electrode to modulate the output signal. In the preferred embodiment, the output signal is a control voltage that is applied between the cantilever electrode and a control electrode to maintain a constant tunneling current. In an alternative embodiment, a lateral control electrode is fabricated to produce a lateral motion of the cantilever electrode such that the sensor detects a rotation. In another embodiment, x, y and z-axis sensors are fabricated on a substrate to provide a planar three-axis sensor.

US Patent:

55961940, Jan 21, 1997

Filed:

Aug 19, 1994

Appl. No.:

8/292897

Inventors:

Randall L. Kubena - Agoura CA
Gary M. Atkinson - Thousand Oaks CA

Assignee:

Hughes Aircraft Company - Los Angeles CA

International Classification:

H01J 37244

US Classification:

250306

Abstract:

A tunneling tip sensor and method of photolithographically fabricating a unitary structure sensor on a semiconductor substrate are disclosed. A cantilever electrode is formed on the substrate with one end suspended above the substrate at a distance from a tunneling electrode so that a tunneling current flows through the cantilever and tunneling electrodes in response to an applied bias voltage. The cantilever and tunneling electrodes form a circuit that produces an output signal. A force applied to the sensor urges the cantilever electrode to deflect relative to the tunneling electrode to modulate the output signal. In the preferred embodiment, the output signal is a control voltage that is applied between the cantilever electrode and a control electrode to maintain a constant tunneling current. In an alternative embodiment, a lateral control electrode is fabricated to produce a lateral motion of the cantilever electrode such that the sensor detects a rotation. In another embodiment, x, y and z-axis sensors are fabricated on a substrate to provide a planar three-axis sensor.

US Patent:

50121537, Apr 30, 1991

Filed:

Dec 22, 1989

Appl. No.:

7/455217

Inventors:

Gary M. Atkinson - Santa Monica CA
M. DuChesne Courtney - Mission Hills CA

International Classification:

H01J 2116
H03K 3353

US Classification:

313336

Abstract:

A vacuum FET is designed to perform higher level functions such as logic AND, EXCLUSIVE OR (NOR), demultiplexing, or frequency multiplication with a single device. These higher level functions are accomplished by dividing the collector of the vacuum FET into multiple segments and by providing steering electrodes just above the emitter to deflect the field emission current to the various collector segments. The collector pattern, together with the configuration of the applied signals to the device, determines the higher order function performed.

US Patent:

57568952, May 26, 1998

Filed:

Sep 1, 1995

Appl. No.:

8/522878

Inventors:

Randall L. Kubena - Agoura CA
Gary M. Atkinson - Thousand Oaks CA
Dorian Challoner - Manhattan Beach CA
Wallace Sunada - Los Angeles CA

Assignee:

Hughes Aircraft Company - Los Angeles CA

International Classification:

G01P 904

US Classification:

7350415

Abstract:

Various structures for cantilever beam tunneling rate gyro devices formed on a single substrate are disclosed. A cantilever electrode having a plurality of portions extending from the substrate with one end of the cantilever is suspended above the substrate at a distance from a tunneling electrode so that a tunneling current flows through the cantilever and tunneling electrode in response to an applied bias voltage. The cantilever and tunneling electrodes form a circuit that produces an output signal. A force applied to the sensor urges the cantilever electrode to deflect relative to the tunneling electrode to modulate the output signal. The output signal is a control voltage that is applied between the cantilever electrode and a control electrode to maintain a constant tunneling current. In the preferred embodiment, two cantilever portions extend from the wafer surface forming a Y-shape. In a further embodiment, a strap is fabricated on the cantilever electrode.

US Patent:

53352432, Aug 2, 1994

Filed:

Nov 4, 1992

Appl. No.:

7/971383

Inventors:

Randy L. Kubena - Agoura CA
Frederic P. Stratton - El Segundo CA
Gary M. Atkinson - Santa Monica CA
Hugh McNulty - Santa Monica CA
James W. Ward - Canoga Park CA

Assignee:

Hughes Aircraft Company - Los Angeles CA

International Classification:

H01S 308

US Classification:

372 99

Abstract:

A 3-dimensional opto-electronic system employs an optical communications channel between spaced circuit substrates. The beam from an in-line laser on one substrate is deflected by a turning mirror that is monolithically integrated on the substrate along with the laser and its associated electronic circuitry, and directed to an optical detector on another substrate. The deflection is accomplished with a turning mirror that is specially fabricated with a focused ion beam (FIB) so that it focuses or collimates as well as deflects the laser beam onto the photodetector. The mirror is initially formed with a flat surface, and is thereafter processed with the FIB to produce focusing curvatures in both x and y directions. The mirror is preferably spaced away from the laser, and is illuminated over substantially the full laser height to maximize its focal length for a given reflected spot size. For a rectangular laser beam, the mirror curvature can be different along the mirror width than along its height to produce a smaller, more rounded spot.

US Patent:

59052023, May 18, 1999

Filed:

Nov 25, 1997

Appl. No.:

8/977702

Inventors:

Randall L. Kubena - Agoura CA
Gary M. Atkinson - Thousand Oaks CA
Dorian Challoner - Manhattan Beach CA
Wallace Sunada - Los Angeles CA

Assignee:

Hughes Electronics Corporation - El Segundo CA

International Classification:

G01P9/04

US Classification:

7350415

Abstract:

Various structures for cantilever beam tunneling rate gyro devices formed on a single substrate are disclosed. A cantilever electrode having a plurality of portions extending from the substrate with one end of the cantilever is suspended above the substrate at a distance from a tunneling electrode so that a tunneling current flows through the cantilever and tunneling electrode in response to an applied bias voltage. The cantilever and tunneling electrodes form a circuit that produces an output signal. A force applied to the sensor urges the cantilever electrode to deflect relative to the tunneling electrode to modulate the output signal. The output signal is a control voltage that is applied between the cantilever electrode and a control electrode to maintain a constant tunneling current. In the preferred embodiment, two cantilever portions extend from the wafer surface forming a Y-shape. In a further embodiment, a strap is fabricated on the cantilever electrode.

US Patent:

55018220, Mar 26, 1996

Filed:

May 5, 1994

Appl. No.:

8/238131

Inventors:

Randy L. Kubena - Agoura CA
Frederic P. Stratton - El Segundo CA
Gary M. Atkinson - Santa Monica CA
Hugh McNulty - Santa Monica CA
James W. Ward - Canoga Park CA

Assignee:

Hughes Aircraft Company - Los Angeles CA

International Classification:

B29D 1100

US Classification:

264 137

Abstract:

A 3-dimensional opto-electronic system employs an optical communications channel between spaced circuit substrates. The beam from an in-line laser on one substrate is deflected by a turning mirror that is monolithically integrated on the substrate along with the laser and its associated electronic circuitry, and directed to an optical detector on another substrate. The deflection is accomplished with a turning mirror that is specially fabricated with a focused ion beam (FIB) so that it focuses or collimates as well as deflects the laser beam onto the photodetector. The mirror is initially formed with a flat surface, and is thereafter processed with the FIB to produce focusing curvatures in both x and y directions. The mirror is preferably spaced away from the laser, and is illuminated over substantially the full laser height to maximize its focal length for a given reflected spot size. For a rectangular laser beam, the mirror curvature can be different along the mirror width than along its height to produce a smaller, more rounded spot.

US Patent:

61091057, Aug 29, 2000

Filed:

Nov 4, 1998

Appl. No.:

9/186174

Inventors:

Randall L. Kubena - Agoura CA
Gary M. Atkinson - Thousand Oaks CA
Dorian Challoner - Manhattan Beach CA
Wallace Sunada - Los Angeles CA

Assignee:

Hughes Electronics Corporation - El Segundo CA

International Classification:

G01P 904

US Classification:

7350415

Abstract:

Various structures for cantilever beam tunneling rate gyro devices formed on a single substrate are disclosed. A cantilever electrode having a plurality of portions extending from the substrate with one end of the cantilever is suspended above the substrate at a distance from a tunneling electrode so that a tunneling current flows through the cantilever and tunneling electrode in response to an applied bias voltage. The cantilever and tunneling electrodes form a circuit that produces an output signal. A force applied to the sensor urges the cantilever electrode to deflect relative to the tunneling electrode to modulate the output signal. The output signal is a control voltage that is applied between the cantilever electrode and a control electrode to maintain a constant tunneling current. In the preferred embodiment, two cantilever portions extend from the wafer surface forming a Y-shape. In a further embodiment, a strap is fabricated on the cantilever electrode.