Geoffrey J Crabtree

US Patent:

20070111489, May 17, 2007

Filed:

Nov 16, 2006

Appl. No.:

11/560568

Inventors:

Geoffrey Jude CRABTREE - Vancouver WA, US
Harry Prothero - Yacolt WA, US

International Classification:

H01L 21/00

US Classification:

438500000

Abstract:

A source melt is formed by melting a source material comprising a semiconductor material. A portion of the source melt is directionally recrystallized to form an intermediate crystal and a residue portion that includes impurities. The residue portion is disposed of. Subsequently, at least a portion of the intermediate crystal is melted in a container to form a pool comprising at least the portion of the melted intermediate crystal. A semiconductor body is produced, by crystallising at least part of the pool. The semiconductor body may subsequently be transformed, for instance from an ingot form to a wafer form. A semiconductor device, such as one comprising a photovoltaic cell, may be produced from such a wafer.

US Patent:

20070144576, Jun 28, 2007

Filed:

Dec 22, 2005

Appl. No.:

11/315448

Inventors:

Geoffrey Crabtree - Vancouver WA, US
Gilbert Duran - Chatsworth CA, US
Christian Fredric - Ventura CA, US
Theresa Jester - Carpinteria CA, US
Douglas Christopher King - Simi Valley CA, US
Jeffrey Nickerson - Moorpark CA, US
Paul Norum - Camarillo CA, US

International Classification:

H02N 6/00

US Classification:

136251000

Abstract:

A photovoltaic module comprising one or more photovoltaic cells packaged between a light-facing layer and a backside layer, wherein the light-facing layer comprises antimony-doped glass.

US Patent:

20110120365, May 26, 2011

Filed:

Nov 25, 2009

Appl. No.:

12/626180

Inventors:

Hui She - Issaquah WA, US
Geoffrey Crabtree - Vancouver WA, US

International Classification:

C30B 11/00
C01B 33/037

US Classification:

117 74, 423349, 117206

Abstract:

A process for removal of contaminants from a melt of non-ferrous metals comprising the following steps: providing an apparatus () for melting and solidifying non-ferrous metals comprising a crucible () for holding a non-ferrous metal melt and a process chamber (), in which the crucible () can be placed, wherein the crucible () contains an additive (), providing a melt () in the crucible (), heating the melt () in the crucible () to a predetermined temperature, whereby the additive () can react with contaminants in the melt (), and segregating the reacted contaminants from the melt ().

US Patent:

55535666, Sep 10, 1996

Filed:

Jun 22, 1995

Appl. No.:

8/493607

Inventors:

Geoffrey J. Crabtree - Chandler AZ

Assignee:

Motorola Inc. - Schaumburg IL

International Classification:

C30B 1504

US Classification:

117 2

Abstract:

A method for fabricating semiconductor substrates with resistivity below 0. 02 ohm-cm is provided. This low resistivity is achieved by doping a silicon melt with a phosphorus concentrations above 1. times. 10. sup. 18. The silicon melt is also doped with a germanium concentration that is 1. 5 to 2. 5 times that of the phosphorus concentration and a stress and dislocation free crystalline boule is grown. Phosphorus in high concentrations will induce stress in the crystal lattice due to the difference in the atomic radius of silicon atoms versus phosphorus atoms. Germanium compensates for the atomic radius mismatch and also retards the diffusion of the phosphorus as the diffusion coefficient remains relatively constant with a doping of 1. times. 10. sup. 18 to 1. times. 10. sup. 21 atoms per cm. sup. 3. This will retard phosphorus from diffusing into an overlying epitaxial layer and retard other layers formed on the substrate from being auto-doped.

US Patent:

57443963, Apr 28, 1998

Filed:

May 31, 1996

Appl. No.:

8/658908

Inventors:

Geoffrey J. Crabtree - Chandler AZ

Assignee:

Motorola, Inc. - Schaumburg IL

International Classification:

H01L 21225

US Classification:

438501

Abstract:

A method for fabricating semiconductor substrates with resistivity below 0. 02 ohm-cm is provided. This low resistivity is achieved by doping a silicon melt with a phosphorus concentrations above 1. times. 10. sup. 18. The silicon melt is also doped with a germanium concentration that is 1. 5 to 2. 5 times that of the phosphorus concentration and a stress and dislocation free crystalline boule is grown. Phosphorus in high concentrations will induce stress in the crystal lattice due to the difference in the atomic radius of silicon atoms versus phosphorus atoms. Germanium compensates for the atomic radius mismatch and also retards the diffusion of the phosphorus as the diffusion coefficient remains relatively constant with a doping of 1. times. 10. sup. 18 to 1. times. 10. sup. 21 atoms per cm. sup. 3. This will retard phosphorus from diffusing into an overlying epitaxial layer and retard other layers formed on the substrate from being auto-doped.