Kevin W. Frary - Fair Oaks CA George Canepa - Folsom CA Sherif Sweha - El Dorado Hills CA
Assignee:
Intel Corporation - Santa Clara CA
International Classification:
G11C 700
US Classification:
36518909
Abstract:
In a memory array having a plurality of bitlines each connected to a plurality of memory devices having a state in which current is transferred by the memory device and a state in which current is not transferred by the device, a column select device for activating each bitline, a plurality of wordlines for activating individual memory devices joined to each bitline, apparatus for providing constant current in the conducting state of a memory device connected to a bitline, a device connecting a source voltage to a plurality of bitlines, and a reference bitline for providing an output reference signal, the improvement including apparatus for providing a source of current in addition to current through the device connecting a source voltage to a plurality of bitlines in order to charge any capacitance of a selected bitline when that bitline is selected whereby switching between memory devices joined to different bitlines is accelerated.
An improvement in the margining circuit wherein a variable load is provided to a column of EPROM cells. A plurality of parallel transistors are coupled as the load and by controlling the number of transistors which are turned on, the voltage to the column can be adjusted, effectively adjusting the current to the cells.
Apparatus For Selecting Alternate Addressing Mode And Read-Only Memory
An EPROM which includes on-chip circuitry for selecting alternate addressing. An EPROM cell, separate from the memory's array, is programmed to convert the memory to the alternate page mode addressing. The selection of the pages is done through the data lines. This frees address lines when the alternate mode is selected.
Semiconductor Cell For Neural Network And The Like
George R. Canepa - Folsom CA Mark A. Holler - Palo Alto CA Simon M. Tam - San Mateo CA
Assignee:
Intel Corporation - Santa Clara CA
International Classification:
H01L 2968 H01L 2702 H01L 2710 H03K 1908
US Classification:
357 235
Abstract:
A cell employing floating gate storage device particularly suited for neural networks. The floating gate from the floating gate device extends to and becomes part of a second, field effect device. Current through the second device is affected by the charge on the floating gate. The weighting factor for the cell is determined by the amount of charge on the floating gate. By charging the floating gate to various levels, a continuum of weighting factors is obtained. Multiplication is obtained since the current through the second device is a function of the weighting factor.
George R. Canepa - Folsom CA Mark Bauer - Folsom CA Phil Kliza - Folsom CA
Assignee:
Intel Corporation - Santa Clara CA
International Classification:
G11C 800 G06F 1206
US Classification:
3652385
Abstract:
An EPROM includes an on chip circuitry for selecting an alternative chapter mode addressing scheme. By utilizing the chapter addressing mode, a plurality of devices can be coupled in parallel, wherein each device is treated as a chapter of the total memory capacity. Hard latches are used to store a designated code and soft latches are used to latch in chapter addresses from data lines. A chapter is evaluated if values stored in the hard latch match the values inputted to the soft latch.
Method And Apparatus For Providing An Ultra Low Power Regulated Negative Charge Pump
Dimitris Pantelakis - Folsom CA Kerry Tedrow - Orangevale CA Johnny Javanifard - Sacramento CA George Canepa - Folsom CA
Assignee:
Intel Corporation - Santa Clara CA
International Classification:
H02M 318 G05F 316
US Classification:
363 60
Abstract:
A circuit for providing a regulated output voltage from a charge pump circuit while utilizing very low amounts of power, the circuit including a clock circuit for providing clock pulses to operate the charge pump circuit to produce an output voltage, a bias circuit for monitoring the output voltage of the charge pump and furnishing signals for enabling the clock circuit in response to an insufficient output voltage, and circuitry for enabling the bias circuit during a fraction of the total operating time available to the charge pump.