Gerald T Gibson

US Patent:

7695897, Apr 13, 2010

Filed:

May 8, 2006

Appl. No.:

11/429709

Inventors:

James J. Bucchignano - Yorktown Heights NY, US
Gerald W. Gibson - Danbury CT, US
Mary B. Rothwell - Ridgefield CT, US
Roy R. Yu - Poughkeepsie NY, US

Assignee:

International Business Machines Corporation - Armonk NY

International Classification:

G03F 7/00
G03F 7/26

US Classification:

430313, 430323, 430317, 430316, 430296, 216 72, 216 58

Abstract:

The present invention relates to improved methods and structures for forming interconnect patterns in low-k or ultra low-k (i. e. , having a dielectric constant ranging from about 1. 5 to about 3. 5) interlevel dielectric (ILD) materials. Specifically, reduced lithographic critical dimensions (CDs) (i. e. , in comparison with target CDs) are initially used for forming a patterned resist layer with an increased thickness, which in turn allows use of a simple hard mask stack comprising a lower nitride mask layer and an upper oxide mask layer for subsequent pattern transfer. The hard mask stack is next patterned by a first reactive ion etching (RIE) process using an oxygen-containing chemistry to form hard mask openings with restored CDs that are substantially the same as the target CDs. The ILD materials are then patterned by a second RIE process using a nitrogen-containing chemistry to form the interconnect pattern with the target CDs.

US Patent:

8449781, May 28, 2013

Filed:

Jun 22, 2010

Appl. No.:

12/820870

Inventors:

Maxime Darnon - Yorktown Heights NY, US
Gerald W. Gibson - Yorktown Heights NY, US
Pratik P. Joshi - Yorktown Heights NY, US
Ryan M. Martin - Yorktown Heights NY, US
Ying Zhang - Yorktown Heights NY, US

Assignee:

International Business Machines Corporation - Armonk NY

International Classification:

B32B 37/00
C03C 25/68

US Classification:

216 7, 216 56

Abstract:

The present disclosure relates to a method for selectively etching-back a polymer matrix to expose tips of carbon nanotubes comprising:.

US Patent:

20050070034, Mar 31, 2005

Filed:

Sep 30, 2003

Appl. No.:

10/675572

Inventors:

Gerald Gibson - Danbury CT, US

International Classification:

H01L021/00

US Classification:

438008000, 156345260

Abstract:

A process and apparatus for controlling an etchant gas concentration in an etch chamber. The etchant gas concentration and an inert gas concentration are determined and the latter concentration is used to normalize the etchant gas concentration. The normalized value is compared with a predetermined reference value and the flow of etchant gas into the chamber is controlled in response thereto.

US Patent:

20060181188, Aug 17, 2006

Filed:

Feb 14, 2005

Appl. No.:

11/057690

Inventors:

Seong Koh - Manfield TX, US
Gerald Gibson - Danbury CT, US

International Classification:

H01J 1/02
H01J 9/00

US Classification:

313309000, 313495000, 445024000

Abstract:

A method for forming high density emission elements for a field emission display and field emission elements and field emission displays formed according to the method. Oxygen and a silicon etchant are introduced into a plasma etching chamber containing a silicon substrate. The oxygen reacts with the silicon surface to form regions of silicon dioxide, while the silicon etchant etches the silicon to form the emission elements. The silicon dioxide regions mask the underlying silicon during the silicon etch process. High density and high aspect ratio emission elements are formed without using photolithographic processes as practiced in the prior art. The emission elements formed according to the present invention provide a more uniform emission of electrons than the prior art techniques. Further, a display incorporating emission elements formed according to the present invention provides increased brightness. Further, the reliability of the display is increased due to the use of a plurality of emission elements to supply electrons for stimulating the phosphor substrate material to produce the image.

US Patent:

20070275485, Nov 29, 2007

Filed:

Jul 13, 2007

Appl. No.:

11/827807

Inventors:

Gerald Gibson - Danbury CT, US

International Classification:

H01L 21/306

US Classification:

438008000, 257E21215

Abstract:

A process and apparatus for controlling an etchant gas concentration in an etch chamber. The etchant gas concentration and an inert gas concentration are determined and the latter concentration is used to normalize the etchant gas concentration. The normalized value is compared with a predetermined reference value and the flow of etchant gas into the chamber is controlled in response thereto.

US Patent:

20080173972, Jul 24, 2008

Filed:

Jan 19, 2007

Appl. No.:

11/624824

Inventors:

Gerald W. Gibson - Danbury CT, US

Assignee:

INTERNATIONAL BUSINESS MACHINES CORPORATION - Armonk NY

International Classification:

H01L 23/00
H01L 21/66
H01L 21/302

US Classification:

257506, 438692, 438 16, 257E23001, 257E21521, 257E21214

Abstract:

A method for thinning a semiconductor wafer, the method includes selecting a semiconductor wafer having a buried stop layer; and planarizing the semiconductor wafer to the buried stop layer to produce a thin semiconductor wafer.

US Patent:

20100196806, Aug 5, 2010

Filed:

Apr 12, 2010

Appl. No.:

12/758431

Inventors:

James J. Bucchignano - Yorktown Heights NY, US
Gerald W. Gibson - Danbury CT, US
Mary B. Rothwell - Ridgefield CT, US
Roy R. Yu - Poughkeepsie NY, US

Assignee:

INTERNATIONAL BUSINESS MACHINES CORPORATION - Armonk NY

International Classification:

G03F 1/00

US Classification:

430 5

Abstract:

The present invention relates to improved methods and structures for forming interconnect patterns in low-k or ultra low-k (i.e., having a dielectric constant ranging from about 1.5 to about 3.5) interlevel dielectric (ILD) materials. Specifically, reduced lithographic critical dimensions (CDs) (i.e., in comparison with target CDs) are initially used for forming a patterned resist layer with an increased thickness, which in turn allows use of a simple hard mask stack comprising a lower nitride mask layer and an upper oxide mask layer for subsequent pattern transfer. The hard mask stack is next patterned by a first reactive ion etching (RIE) process using an oxygen-containing chemistry to form hard mask openings with restored CDs that are substantially the same as the target CDs. The ILD materials are then patterned by a second RIE process using a nitrogen-containing chemistry to form the interconnect pattern with the target CDs.

US Patent:

20110309507, Dec 22, 2011

Filed:

Jun 22, 2010

Appl. No.:

12/820880

Inventors:

Maxime Darnon - Grenoble NY, US
Gerald W. Gibson - Danbury CT, US
Pratik P. Joshi - Cliffside Park NJ, US
Qinghuang Lin - Yorktown Heights NY, US

Assignee:

International Business Machines Corp. - Armonk NY

International Classification:

H01L 23/532
H01L 21/768
H01L 21/66
B82Y 40/00
B82Y 99/00

US Classification:

257746, 438 17, 257E23165, 257E2159, 257E21531, 977750, 977752, 977932

Abstract:

The present disclosure relates to a structure comprisingand to methods of making the structure and using the structure to measure the electrical characteristics of carbon nanotubes.