Gerald L Gibson

US Patent:

20040043574, Mar 4, 2004

Filed:

Sep 3, 2002

Appl. No.:

10/234354

Inventors:

Kurt Steiner - Fogelsville PA, US
Gerald Gibson - Orlando FL, US
Eduardo Quinones - Celebration FL, US

International Classification:

H01L021/3205
H01L021/336
H01L021/4763

US Classification:

438/303000, 438/595000

Abstract:

A protruding spacer that protrudes above the top surface of a gate electrode structure provides enhanced resistance to exposure of the gate electrode during the etch process used to form self-aligned contacts. The protruding spacer may be formed using an amorphous carbon sacrificial layer as the top layer of the patterned gate electrode structure. Dielectric spacers are formed alongside the gate electrode structure, including alongside the sacrificial amorphous carbon layer. The dielectric spacers extend substantially to the top of the amorphous carbon layer. The amorphous carbon layer is then removed such that the remaining gate structure includes dielectric spacers that have a protruding section that protrudes above the top surface of the remaining gate structure. A nitride layer may be formed over the gate structure. Such a structure prevents exposure of the gate electrode during the formation of self-aligned contacts, and shorting, once the contact openings are filled.

US Patent:

20070023848, Feb 1, 2007

Filed:

Oct 4, 2006

Appl. No.:

11/542864

Inventors:

Kurt Steiner - Fogelsville PA, US
Gerald Gibson - Orlando FL, US
Eduardo Quinones - Celebration FL, US

International Classification:

H01L 29/94
H01L 21/8238

US Classification:

257410000, 438216000, 438585000, 257E29128

Abstract:

A protruding spacer that protrudes above the top surface of a gate electrode structure provides enhanced resistance to exposure of the gate electrode during the etch process used to form self-aligned contacts. The protruding spacer may be formed using an amorphous carbon sacrificial layer as the top layer of the patterned gate electrode structure. Dielectric spacers are formed alongside the gate electrode structure, including alongside the sacrificial amorphous carbon layer. The dielectric spacers extend substantially to the top of the amorphous carbon layer. The amorphous carbon layer is then removed such that the remaining gate structure includes dielectric spacers that have a protruding section that protrudes above the top surface of the remaining gate structure. A nitride layer may be formed over the gate structure. Such a structure prevents exposure of the gate electrode during the formation of self-aligned contacts, and shorting, once the contact openings are filled.