Jack K. Keller - Macungie PA Gilbert L. Mowery - Allentown PA
Assignee:
Bell Telephone Laboratories, Incorporated - Murray Hill NJ
International Classification:
H03K 19003 H03K 19094 H03K 19173 H03K 1920
US Classification:
307473
Abstract:
A first MOS (metal-oxide-semiconductor) NOR-gate device feeding a second MOS NOR-gate device feeding an MOS output load device is arranged to yield a three output level buffer circuit, that is, whose output to a common data bus line can be "high" ("1"), "low" ("0"), or of very high impedance ("floating"). Each NOR-gate contains a low. beta. ("load") depletion mode type of MOS transistor and a high. beta. ("driver") enhancement mode type of MOS; the output load device contains an output driver enhancement mode type of MOS transistor and an output load MOS transistor having a threshold intermediate that of the depletion mode and enhancement mode type of MOS transistor. In this manner, only a single voltage source V. sub. DD, or typically about +5 volts in N-MOS integrated circuit technology is required to power the buffer circuit completely.
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