Glenn Thomas Carroll

US Patent:

6774261, Aug 10, 2004

Filed:

Aug 29, 2002

Appl. No.:

10/231318

Inventors:

David Bow - Mason OH
Glenn Thomas Carroll - Norristown PA

Assignee:

Buffers Biochemicals Corporation - Loveland OH

International Classification:

C07C30900

US Classification:

562 30, 516198, 516200, 516201, 516203, 516204

Abstract:

This invention relates to high purity hydrogen ion buffers and in particular amino-organosulfonic acid zwitterionic compositions having low metal content. The concentration of any single metal in the composition is no greater than about 500 ppb, and ideally is less than about 20 ppb.

US Patent:

6803353, Oct 12, 2004

Filed:

Oct 14, 2003

Appl. No.:

10/685730

Inventors:

Nicholas Martyak - Doylestown PA
Glenn Carroll - Norristown PA

Assignee:

Atofina Chemicals, Inc. - Philadelphia PA

International Classification:

C09K 1300

US Classification:

510175, 438692, 438693, 510375

Abstract:

A family of slurries useful in modifying exposed surfaces of wafers for semiconductor fabrication are provided along with methods of modifying exposed surfaces of wafers for semiconductor fabrication utilizing such a family of working slurries, and semiconductor wafers. The slurries of the invention are a solution of initial components, the components comprising: a sulfonated zwitterion selected from 2-(N-Morpholino)ethanesulfonic acid, (3-[N-Morpholino])propanesulfonic acid, 2-[(2-Amino-2-oxoethyl)amino]ethanesulfonic acid, Piperazine-N,Nâ-bis(2-ethanesulfonic acid), 3-(N-Morpholino)-2-hydroxypropanesulfonic acid, N,N-Bis(2-hydroxyethyl)-2-aminoethanesulfonic acid, 3-(N-Morpholino)propanesulfonic acid, N-(2-Hydroxyethyl)piperazine-Nâ-(2-ethanesulfonic acid), N-Tris(hydroxymethyl)methyl-2 aminoethanesulfonic acid, 3-[N,N-Bis(2-hydroxyethyl)amino]-2-hydroxypropanesulfonic acid, 3-[N-Tris(hydroxymethyl)methylamino)-2-hydroxypropanesulfonic acid, N-(2-hydroxyethyl)piperazine-Nâ-(2-hydroxypropanesulfonic acid), Piperazine-N,Nâ-bis(2-hydroxypropanesulfonic acid), N-(2-Hydroxyethyl)piperazine-Nâ-(3-propanesulfonic acid), N-Tris(hydroxymethyl)methyl-3-aminopropanesulfonic acid, 3-[(1,1-Dimethy 1-2-hydroxyethyl)amino]-2-hydroxypropanesulfonic, acid, 2-(N-Cyclohexylamino)ethanesulfonic acid, 3-(Cyclohexylamino)-2-hydroxy-l-propanesulfonic acid, 2-Amino-2-methyl-1-propanol, 3-(Cyclohexylamino)-1-propanesulfonic acid, an oxidizing agent; optionally, a passivating agent; optionally a chelating agent, optionally abrasive particles, optionally a surfactant, optionally a secondary buffering agent and water. The method of the invention comprises the steps of: a) providing a wafer comprising a first material having a surface etched to form a pattern and a second material deposited over the surface of the first material; b) contacting the second material of the wafer with abrasive in the presence of the working slurry; and c) relatively moving the wafer or polishing pad or both while the second material is in contact with the slurry and abrasive particles until an exposed surface of the wafer is planar and comprises at least one area of exposed first material and one area of exposed second material.

US Patent:

6911393, Jun 28, 2005

Filed:

Nov 12, 2003

Appl. No.:

10/706178

Inventors:

Martin Nosowitz - Paoli PA, US
Nicholas M. Martyak - Doylestown PA, US
Glenn Carroll - Norristown PA, US
Patrick K. Janney - Ridley Park PA, US

Assignee:

Arkema Inc. - Philadelphia PA

International Classification:

H01L021/44

US Classification:

438678, 438692, 438745, 510175, 510176, 252 791

Abstract:

A family of slurries are disclosed which are useful in modifying exposed surfaces of wafers for semiconductor fabrication are provided along with methods of modifying exposed surfaces of wafers for semiconductor fabrication utilizing such a family of working slurries, and semiconductor wafers. The slurries of the invention are comprised of a liquid carrier; a sulfur-bearing compounds capable of converting copper to copper sulfide; optionally, abrasive particles (polishing agent; optionally a chelating agent; optionally a buffering agent; optionally, a stopping compound; optionally, other additives; and optionally, a co-solvent. The method of the invention comprises the steps of: a) providing a wafer comprising a first material having a surface etched to form a pattern and a second material deposited over the surface of the first material; b) contacting the second material of the wafer with abrasive in the presence of the working slurry; and c) relatively moving the wafer or polishing pad or both while the second material is in contact with the slurry and abrasive particles until an exposed surface of the wafer is planar and comprises at least one area of exposed first material and one area of exposed second material.

US Patent:

7208599, Apr 24, 2007

Filed:

Oct 26, 2004

Appl. No.:

10/973610

Inventors:

Glenn T. Carroll - Norristown PA, US
Gary S. Smith - Collegeville PA, US
Gary E. Stringer - Birdsboro PA, US

Assignee:

Arkema Inc. - Philadelphia PA

International Classification:

C07D 241/04

US Classification:

544358

Abstract:

The present invention relates to a process for the preparation of substituted alkanesulfonates by the reaction of an aqueous metal substituted 2-hydroxyethanesulfonate with a nucleophile. 2-Alkylaminoalkanesulfonate is formed when the nucleophile is an amine. The invention also relates to the optimization of reaction conditions to produce an optimum yield.

US Patent:

7297669, Nov 20, 2007

Filed:

Sep 2, 2004

Appl. No.:

10/933141

Inventors:

Nicholas Martyak - Doylestown PA, US
Glenn Carroll - Norristown PA, US

Assignee:

Arkema Inc. - Philadelphia PA

International Classification:

H01L 21/302

US Classification:

510175, 438692, 438693

Abstract:

A family of slurries useful in modifying exposed surfaces of wafers for semiconductor fabrication are provided along with methods of modifying exposed surfaces of wafers for semiconductor fabrication utilizing such a family of working slurries, and semiconductor wafers. The slurries of the invention are a solution of initial components, the components comprising: a sulfonated zwitterion selected from 2-(N-Morpholino)ethanesulfonic acid, (3-[N-Morpholino])propanesulfonic acid, 2-[(2-Amino-2-oxoethyl)amino]ethanesulfonic acid, Piperazine-N, N′-bis(2-ethanesulfonic acid), 3-(N-Morpholino)-2-hydroxypropanesulfonic acid, N ,N-Bis(2-hydroxyethyl)-2-aminoethanesulfonic acid, 3-(N-Morpholino)propanesulfonic acid, N-(2-Hydroxyethyl)piperazine-N′-(2-ethanesulfonic acid), N-Tris(hydroxymethyl)methyl-2 aminoethanesulfonic acid, 3-[N ,N-Bis(2-hydroxyethyl)amino]-2-hydroxypropanesulfonic acid, 3-[N-Tris(hydroxymethyl)methylamino)-2-hydroxypropanesulfonic acid, N-(2-hydroxyethyl)piperazine-N′-(2-hydroxypropanesulfonic acid), Piperazine-N ,N′-bis(2-hydroxypropanesulfonic acid), N-(2-Hydroxyethyl)piperazine-N′-(3-propanesulfonic acid), N-Tris(hydroxymethyl)methyl-3-aminopropanesulfonic acid, 3-[(1,1-Dimethy 1-2-hydroxyethyl)amino]-2-hydroxypropanesulfonic, acid, 2-(N-Cyclohexylamino)ethanesulfonic acid, 3-(Cyclohexylamino)-2-hydroxy-I-propanesulfonic acid, 2-Amino-2-methyl-I-propanol, 3-(Cyclohexylamino)-1-propanesulfonic acid, an oxidizing agent; optionally, a passivating agent; optionally a chelating agent, optionally abrasive particles, optionally a surfactant, optionally a secondary buffering agent and water. The method of the invention comprises the steps of: a) providing a wafer comprising a first material having a surface etched to form a pattern and a second material deposited over the surface of the first material; b) contacting the second material of the wafer with abrasive in the presence of the working slurry; and c) relatively moving the wafer or polishing pad or both while the second material is in contact with the slurry and abrasive particles until an exposed surface of the wafer is planar and comprises at least one area of exposed first material and one area of exposed second material.

US Patent:

20080214414, Sep 4, 2008

Filed:

Jul 12, 2006

Appl. No.:

11/994527

Inventors:

Glenn T. Carroll - Jeffersonville PA, US
Gary E. Stringer - Birdsboro PA, US
Gary S. Smith - Collegeville PA, US

Assignee:

Arkema Inc. - Philadelphia PA

International Classification:

C23F 11/16

US Classification:

507247

Abstract:

Oil wells are treated with latent acids containing a sulfonyl moiety, wherein the latent acid is capable of providing an active acid after injection into an oil well. The latent acids are converted to active acids, such as mineral acids or strong organic acids, in the oil well, with resultant dissolution of acid-soluble minerals that impede oil or gas flow. RYSO2X is an exemplary latent acid, where: R is C(1)-C(30) hydrocaryl alone, or appended to an oligomeric or polymeric chain, or substituted; X is halogen; and Y is O, S, Se, or NR or a direct bond. M is a Group IVA metal, a Group IVB metal, a Group IB metal, or a Group HB metal. Other exemplary latent acids include amine functionality.

US Patent:

20110136706, Jun 9, 2011

Filed:

Feb 17, 2011

Appl. No.:

13/029358

Inventors:

Glenn T. Carroll - Jeffersonville PA, US
Gary E. Stringer - Birdsboro PA, US
Gary S. Smith - Collegeville PA, US

Assignee:

Arkema Inc. - Philadelphia PA

International Classification:

C09K 8/58

US Classification:

507259

Abstract:

Oil wells are treated with latent acids containing a sulfonyl moiety, wherein the latent acid is capable of providing an active acid after injection into an oil well. The latent acids are converted to active acids such as mineral acids or strong organic acids in the oil well, with resultant dissolution of acid-soluble minerals that impede oil or gas flow. Exemplary latent acids are according to any of formulas (I), (II), and (III)In formulas (I), (II), and (III), Ris selected from the group consisting of C-Chydrocarbyl moieties, C-Chydrocarbyl moieties appended to an oligomeric or polymeric chain, and C-Chydrocarbyl moieties substituted with functional groups containing halogen, oxygen, sulfur, selenium, silicon, tin, lead, nitrogen, phosphorous, antimony, bismuth, aluminum, boron, or metals selected from Groups IA-IIA and IB-VIIIB of the periodic table; X is a halogen or ZCRRR; Y and Z are independently O, S, Se, or NR, and Y may also be a direct bond; R, R, Rand Rare independently hydrogen or as defined for Rand wherein any two or more of R, R, R, Rand Rmay be interconnected to form one or more cyclic structures; M is a Group IVA metal, a Group IVB metal, a Group IB metal, or a Group IIB metal; and p+q+r=n wherein n is the valence of metal M.

US Patent:

51868482, Feb 16, 1993

Filed:

Mar 28, 1991

Appl. No.:

7/678905

Inventors:

Glenn T. Carroll - Jeffersonville PA
Michael J. Lindstrom - Downingtown PA

Assignee:

Elf Atochem North America, Inc. - Philadelphia PA

International Classification:

E21B 3700

US Classification:

252 8552

Abstract:

A process is disclosed for preparing a composition having improved solvent power for sulfur wherein a composition comprising a sulfide having the general formula RSSaSR' wherein R and R' are defined carbon-containing radicals and a is 0 to 3, and a catalyst for improving the ability of said composition to take up sulfur is treated, either before, during or after the addition of said catalyst to said composition, with a primary or secondary amine in an effective amount and for an effective time period.