Graham M Clark

US Patent:

20030048655, Mar 13, 2003

Filed:

Sep 10, 2001

Appl. No.:

09/951801

Inventors:

Graham Clark - Fountain Hills AZ, US

International Classification:

G11C011/24

US Classification:

365/149000

Abstract:

A memory cell () includes a transistor (), a storage capacitor () and a tunnel diode (). The transistor (), storage capacitor () and tunnel diode () couple together at a cell state node (). When the transistor () in the off state, leakage current from cell state node () is compensated by current supplied by the tunnel diode (). The tunnel diode () is formed on a node () of the transistor () so that it consumes no additional semiconductor area beyond that used by the transistor () and storage capacitor ().

US Patent:

20200018918, Jan 16, 2020

Filed:

Jul 13, 2018

Appl. No.:

16/034662

Inventors:

Graham Clark - Lakewood CO, US

Assignee:

Breakthrough Photography, LLC - Lakewood CO

International Classification:

G02B 7/00
G03B 17/14

Abstract:

A magnetic lens filter system includes an external rotational element having a plurality of ridges allowing a photographer to grip and rotate the external rotational element. A plurality of gears is in engagement with the external rotational element, and an inner gear connected to an inner rotational element such that when the external rotational element is rotated the inner rotational element rotates. Advantageously, a rotatable magnetic element is configured to rotate simultaneously with the inner rotational element. The system is configured to accept a removable lens filter. The removable lens filter has a magnetic element configured to attach to the rotatable magnetic element.