Grant D Imper

US Patent:

6399510, Jun 4, 2002

Filed:

Sep 12, 2000

Appl. No.:

09/660001

Inventors:

Norma B. Riley - Pleasanton CA
Roger N. Anderson - Sunnyvale CA
Grant D. Imper - San Jose CA
Paul Comita - Menlo Park CA

Assignee:

Applied Materials, Inc. - Santa Clara CA

International Classification:

H01L 2100

US Classification:

438710, 156345, 216 58, 458708, 458710

Abstract:

A semiconductor substrate processing chamber provides a bi-directional process gas flow for deposition or etching processes. The bi-directional gas flow provides uniformity of deposition layer thickness or uniformity of etching without the need to rotate the substrate. Junctions are provided at opposite ends of a processing chamber. Inlet and outlet ports are provided on each junction. Inlet and outlet ports on opposite junctions cooperate to provide a gas flow in a first direction for half of the process cycle, and in a second direction for the other half of the process cycle.