St Jude Childrens Research Hospital Neurology Oncology 262 Danny Thomas Pl, Memphis, TN 38105 9015955175 (phone), 9015954386 (fax)
Education:
Medical School University of Alabama School of Medicine Graduated: 1999
Procedures:
Lumbar Puncture
Conditions:
Anemia Hearing Loss Pneumonia
Languages:
English
Description:
Dr. Armstrong graduated from the University of Alabama School of Medicine in 1999. He works in Memphis, TN and specializes in Pediatric Hematology-Oncology. Dr. Armstrong is affiliated with Le Bonheur Childrens Hospital.
Us Patents
Method Of Forming High Density Dram Having Increased Capacitance Area Due To Trench Etched Into Storage Capacitor Region
David A. Baglee - Houston TX Robert R. Doering - Plano TX Gregory J. Armstrong - Houston TX
Assignee:
Texas Instruments Incorporated - Dallas TX
International Classification:
H01L 2170 H01L 2700
US Classification:
437 52
Abstract:
A dynamic one-transistor read/write memory cell employs a trench capacitor to increase the magnitude of the stored charge. The trench is etched into the silicon surface at a diffused N+ capacitor region similar in structure to the N+ bit line, then thick oxide is grown over the bit line and over the capacitor region, but not in the trench. The upper plate of the capacitor is a polysilicon layer extending into the trench and also forming field plate isolation over the face of the silicon bar. A refractory metal word line forms the gate of the access transistor at a hole in the polysilicon field plate.
David A. Baglee - Houston TX Robert R. Doering - Plano TX Gregory J. Armstrong - Houston TX
Assignee:
Texas Instruments Incorporated - Dallas TX
International Classification:
H01L 2968 H01L 2702 H01L 2934
US Classification:
257301
Abstract:
A dynamic one-transistor read/write memory cell employs a trench capacitor to increase the magnitude of the stored charge. The trench is etched into the silicon surface at a diffused N+ capacitor region similar in structure to the N+ bit line, then thick oxide is grown over the bit line and over the capacitor region, but not in the trench. The upper plate of the capacitor is a polysilicon layer extending into the trench and also forming field plate isolation over the face of the silicon bar. A word line forms the gate of the access transistor at a hole in the polysilicon field plate.
High Density Cmos Integrated Circuit Manufacturing Process
Robert R. Doering - Plano TX Michael P. Duane - Houston TX Gregory J. Armstrong - Houston TX
Assignee:
Texas Instruments Incorporated - Dallas TX
International Classification:
H01L 21265 H01L 2978 H01L 2704
US Classification:
29576B
Abstract:
A semiconductor device such as a dynamic read/write memory or the like is made by a twin-well CMOS process that employs a minimum number of photomasks. Field oxide isolation areas are formed in nitride-framed recesses so a relatively plane surface is provided, and a minimum of encroachment occurs. Both P-channel and N-channel transistors are constructed with silicided, ion-implanted, source/drain regions, self-aligned to the gates, employing an implant after sidewall oxide is in place, providing lightly-doped drains. The threshold voltages of the P-channel and N-channel transistors are established by the tank implants rather than by separate ion-implant steps for threshold adjust.
Method Of Making Field-Plate Isolated Cmos Devices
Robert R. Doering - Plano TX Gregory J. Armstrong - Houston TX
Assignee:
Texas Instruments Incorporated - Dallas TX
International Classification:
H01L 21263 H01L 2978 H01L 2704
US Classification:
29571
Abstract:
A dynamic read/write memory or the like is made by a twin-well CMOS process that employs field-plate isolation rather than thick field oxide, with no separate channel stop implant. The field plate is grounded over P well areas, and connected to the positive supply over the N wells. One-transistor memory cells are of metal-gate construction with N+ drain regions buried beneath oxide, and other transistors are constructed with silicided, implanted, source/drain regions, self-aligned to the metal gates, employing sidewall oxide spacers to provide lightly-doped drains.
Method Of Making Field-Plate Isolated Cmos Devices
Robert R. Doering - Plano TX Gregory J. Armstrong - Houston TX
Assignee:
Texas Instruments Incorporated - Dallas TX
International Classification:
H01L 21263 H01L 2978 H01L 2704
US Classification:
437 5
Abstract:
A dynamic read/write memory or the like is made by a twin-well CMOS process that employs field-plate isolation rather than thick field oxide, with no separate channel stop implant. The field plate is grounded over P well areas, and connected to the positive supply over the N wells. One-transistor memory cells are of metal-gate construction with N+ drain regions buried beneath oxide, and other transistors are constructed with silicided, implanted, source/drain regions, self-aligned to the metal gates, employing sidewall oxide spacers to provide lightly-doped drains.
Do Seo Park - Houston TX, US Marc Samuelson - Houston TX, US Zhi Yong He - Cypress TX, US Gregory Armstrong - Houston TX, US Donavan Holland Brown - Houston TX, US
A pressurized seat check valve including a flexible frustoconical seat having a back surface configured for exposure to upstream pressure, a closure member in sealable communication with the seat, the closure member being biased into contact with the seat and, in use, the seat being deflected toward the closure member by the exposure to upstream pressure.
Tennessee State University
Bachelor of Business Administration (BBA), Accounting
Vanderbilt University
Master of Business Administration (MBA), Finance and Financial Management Services
Skills:
Suppliers Waterfall Expenses Vendors Data Entry Cost Finance Language Development Mainframe Waste Management Sep Ira Directs Texas Management Mos Pc Computer Science Company Presentations Nashville Auditing Powerpoint Accounting Year End Close Settlement Manuals T Mobile English Team Management Variance Explanations Reports Supervision Strategies Budgeting Microsoft Excel Property Bookkeeping Project Management Reporting Word Processing Controller Payroll Analysis Assumptions Cash Flow Houston C Resource Management Operations Ar/Ap Tax Accounting Project Contractual Agreements Cost Control Small Business Performance Improvement Computer Proficiency Internet Explorer Usa Peoplesoft Google Groups Intercompany History Tax Forms Spreadsheets Software Oracle Compliance Outlook Field Operations Microsoft Word Netscape Financial Analysis Occupational Therapy Accounting Applications Budgets Financial Transactions Driving License Svt Farms Lotus Dbms
Stanford University - Stanford, CA Aug 2011 - Jan 2013
Student, MS, Mechanical Engineering
Rockwell Collins - Richardson, TX Nov 2009 - Jul 2011
Mechanical Engineer II
Centre International d'Etudes Pédagogiques and LPO Bellevue - Toulouse Area, France Oct 2008 - May 2009
English Language Assistant
AirLiquide - Paris Area, France Jun 2008 - Aug 2008
Intern, R&D
Dell, Inc - Austin, Texas Area Feb 2008 - May 2008
Student Engineering Design Project
Education:
Stanford University 2011 - 2012
MS, Mechanical Engineering
The University of Texas at Austin 2004 - 2008
B.S., Mechanical Engineering
Skills:
Matlab Engineering Solidworks Finite Element Analysis Mechanical Engineering Ansys Renewable Energy Heat Transfer Modeling R&D Pro Engineer Autocad Simulations Stress Analysis Engineering Management Engineering Design Cad Project Engineering Testing Fluid Mechanics Materials French Product Design Sheet Metal Thermodynamics Microsoft Office Aerospace Unigraphics Fuel Cells Project Planning Project Management Research Energy Energy Efficiency
samples of the virus, a minuscule fraction of the 23 million people infected in the country to date. But the agency has ramped up its efforts by about sixfold in the past two weeks in light of B.1.1.7 and other variants, said Dr. Gregory Armstrong, who leads molecular surveillance efforts at the agency.
Date: Jan 15, 2021
Category: More news
Source: Google
Childhood cancer survivors benefit from reduced radiation treatment
Oncologists and researchers had long assumed that reducing radiation would benefit pediatric cancer survivors, said Gregory Armstrong, an oncologist at St. Judes Childrens Research Hospital in Memphis and the principal investigator of the CCSS. But the new paper demonstrates the link, said Armstro
Date: Feb 28, 2017
Category: Health
Source: Google
Helping Young Cancer Survivors Make the Most of Life
The challenge for us as doctors is not to be content simply with improving lifespan, but to improve the health span of survivors, said Gregory Armstrong, MD, MSCE, of the St. Jude Department of Epidemiology and Cancer Control. He is also principal investigator of the National Cancer Institutefund
Date: Sep 01, 2016
Source: Google
Delayed deaths declining among pediatric cancer survivors
Most people "kind of assume that if you hit the five-year time point, you've beaten your cancer and the story's over," chief author Dr. Gregory Armstrong of St. Jude Children's Research Hospital in Memphis told Reuters Health by phone. "I think the first thing this paper does is show on a national s
Date: Jan 15, 2016
Category: Health
Source: Google
Long-term death rate among childhood cancer survivors falls by half
at least five years after diagnosis. But the legacy of cancer continued to weigh heavily on patients, with about 41% of the nearly 4,000 deaths during the study related to the "late effects" of children's treatment, said Gregory Armstrong, principal researcher of the Childhood Cancer Survivor Study.
To us, the Nets have always been like a stepsister, said Gregory Armstrong, 48 and a Knicks supporter. While Mr. Armstrong, a supermarket manager, gave the Nets some credit for moving to the city, it did not affect his loyalties. Nothings changed wherever the Knicks play in New York, its st
S., measles was eradicated in 2000. But it remains a threat in other countries. Measles hot spots include southern Asia, the Far East, and Africa, Minnesota Public Radio (MPR) reported. But up to 39 percent of measles cases in the U.S. originate in Europe, the CDC's Dr. Gregory Armstrong told MPR.
Date: Apr 08, 2011
Category: Health
Source: Google
Youtube
"GOOD" (Official Video) I Greg Armstrong
I Good lyrics I When I call your name You deliver me When I seek your ...
Duration:
5m 13s
Birthday Gregory Armstrong @hudoUtinkUR
Thank you for letting me make this content and support this channel th...
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1m 52s
"My Everything" - Official Video I Greg Arms...
"My Everything" featuring Greg Armstrong Written by: Greg Armstrong Mi...
Duration:
5m 35s
Dick Gregory_Truth Be Told 2002(rare)
Dick Gregory_how to live longer_Armstrong Wms. Show 2002 1932-2017.
Duration:
36m 45s
Dick Gregory - "They Killed Prince" (2016)
Comedian/Activis... DICK GREGORY shares his insights on the recent de...
Duration:
8m 29s
Dick Gregory - What's REALLY Going On in This...
Alexis sits down with legendary comedian and activist Dick Gregory as ...
Crary Elementary School Detroit MI 1973-1977, Clark D. Brooks Middle School Detroit MI 1979-1984, Emerson Junior High School Detroit MI 1979-1984, Drew Middle School Detroit MI 1979-1984
Community:
Leroy Mcnair, Kim Baynes, John Niemisto, Bryan Keys
Inland Counties Legal Services, Inc. - Attorney (2007)
Education:
Temple University Beasley School of Law - Juris Doctor
Tagline:
Legal Drifter
Gregory Armstrong
About:
A seasoned military officer, with a broad range of executive skills with a corporate view of shared values that are grounded with experience implementing strategic vision, goals, and missions. Proven ...