Gregory J Herman

US Patent:

8404302, Mar 26, 2013

Filed:

Jul 14, 2010

Appl. No.:

12/836300

Inventors:

Jer-shen Maa - Vancouver WA, US
Gregory S. Herman - Camas WA, US
Apostolos T. Voutsas - Portland OR, US

Assignee:

Sharp Laboratories of America, Inc. - Camas WA

International Classification:

B05D 3/02
B05D 5/06
B05D 5/12
H05H 1/00

US Classification:

427162, 427 74, 4271263, 4273835, 427535, 427539

Abstract:

A solution process is provided for forming a textured transparent conductive oxide (TCO) film. The process provides a substrate, and forms a first layer on the substrate of metal oxide nanoparticles such as ZnO, InO, or SnO. The metal oxide nanoparticles have a faceted structure with an average size greater than 100 nanometers (nm). Voids between the metal oxide nanoparticles have a size about equal to the size of the metal oxide nanoparticles. Then, a second layer is formed overlaying the first layer, filling the voids between the nanoparticles of the first layer, and completely covering the substrate. The result is a continuous TCO film having an average surface roughness that is created by the combination of first and second layers.

US Patent:

8513720, Aug 20, 2013

Filed:

Jul 14, 2010

Appl. No.:

12/836217

Inventors:

Gregory S. Herman - Camas WA, US
Jer-shen Maa - Vancouver WA, US
Kanan Puntambekar - Hillsboro OR, US
Apostolos T. Voutsas - Portland OR, US

Assignee:

Sharp Laboratories of America, Inc. - Camas WA

International Classification:

H01L 21/02
H01L 29/66

US Classification:

257289, 257352, 257353, 257E29151, 438151, 438158

Abstract:

A top gate and bottom gate thin film transistor (TFT) are provided with an associated fabrication method. The TFT is fabricated from a substrate, and an active metal oxide semiconductor (MOS) layer overlying the substrate. Source/drain (S/D) regions are formed in contact with the active MOS layer. A channel region is interposed between the S/D regions. The TFT includes a gate electrode, and a gate dielectric interposed between the channel region and the gate electrode. The active MOS layer may be ZnOx, InOx, GaOx, SnOx, or combinations of the above-mentioned materials. The active MOS layer also includes a primary dopant such as H, K, Sc, La, Mo, Bi, Ce, Pr, Nd, Sm, Dy, or combinations of the above-mentioned dopants. The active MOS layer may also include a secondary dopant.

US Patent:

20100047476, Feb 25, 2010

Filed:

Aug 21, 2008

Appl. No.:

12/195673

Inventors:

Jer-Shen Maa - Vancouver WA, US
Gregory S. Herman - Vancouver WA, US
Apostolos T. Voutsas - Portland OR, US

International Classification:

B05D 5/12
H01B 1/04

US Classification:

427596, 427 77, 252500, 423349, 427595

Abstract:

A Si nanoparticle precursor, precursor fabrication process, and precursor deposition process are presented. The method for forming a silicon (Si) nanoparticle precursor provides a plurality of nanoparticle classes, including at least one Si nanoparticle class. The nanoparticles in each nanoparticle class are defined as having a predetermined diameter. A predetermined amount of each nanoparticle class is measured and combined. For example, a first Si nanoparticle class may be provided having a largest diameter and a second Si nanoparticle class having a second-largest diameter equal to about (0.43)×(the largest diameter). As another example, Si nanoparticle classes may foe provided having a diameter ratio of about 77:32:17.

US Patent:

20140296823, Oct 2, 2014

Filed:

Jun 13, 2014

Appl. No.:

14/304166

Inventors:

- Corvallis OR, US
- Portland OR, US
Robert S. Cargill - Portland OR, US
Jessica R. Castle - Portland OR, US
John Conely - Corvallis OR, US
Gregory Herman - Albany OR, US

Assignee:

PACIFIC DIABETES TECHNOLOGIES INC. - Portland OR
The State of Oregon acting by and through the State Board of Higher Education on behalf of Orego - Corvallis OR

International Classification:

A61M 25/00

US Classification:

604504, 604264, 29428

Abstract:

A sensing assembly (), including a body () and one or more first indicating electrodes disposed on the body (). The first indicating electrodes include an electrochemically active layer () and a layer () of an active functioning enzyme of a first enzyme type on top of the electrochemically active layer. Also, one or more second indicating electrodes () are disposed on the body and include an electrochemically active layer () and a layer () of an inactivated enzyme of the first enzyme type on top of the electrochemically active layer. A reference electrode () is also disposed on the body. Finally, an electrical and data processing system () is adapted to bias the electrodes and measure electrical signals from the electrodes, and uses said signals to determine an analyte concentration and communicates the analyte concentration to a location apart from the first and second indicating electrodes.