Gregory T Lewis

US Patent:

20150056763, Feb 26, 2015

Filed:

Aug 20, 2014

Appl. No.:

14/464406

Inventors:

Karl D. Hobart - Upper Marlboro MD, US
Tatyana I. Feygelson - Springfield VA, US
Eugene A. Imhoff - Washington DC, US
Travis J. Anderson - Alexandria VA, US
Joshua D. Caldwell - Accokeek MD, US
Andrew D. Koehler - Washington DC, US
Bradford B. Pate - Arlington VA, US
Marko J. Tadjer - Virginia Beach VA, US
Vincent Gambin - Torrance CA, US
Gregory Lewis - Tustin CA, US
Ioulia Smorchkova - Lakewood CA, US
Mark Goorsky - Los Angeles CA, US
Jeff McKay - Los Angeles CA, US

International Classification:

H01L 29/66
H01L 23/373
H01L 21/768
H01L 21/3065
H01L 21/311
H01L 29/20
H01L 21/02

US Classification:

438172

Abstract:

A method for fabricating a semiconductor device, such as a GaN high electron mobility transistor (HEMT) device, including etching a thermal via into a back-side of a semiconductor substrate and depositing a diamond nucleation seed layer across the back-side of the substrate. The method further includes coating the diamond nucleation with a mask layer and removing mask material outside of the thermal via on the planar portions of the back-side of the substrate. The method includes removing portions of the diamond nucleation layer on the planar portions and then removing the remaining portion of the mask material in the thermal via. The method then includes depositing a bulk diamond layer within the thermal via on the remaining portion of the diamond nucleation layer so that diamond only grows in the thermal via and not on the planar portions of the substrate.