Gregory G Romas from Coppell, TX, age 57

Methods And Apparatus For Higher-Order Correction Of A Bandgap Voltage Reference
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US Patent:

7728575, Jun 1, 2010
Filed:

Dec 18, 2008
Appl. No.:

12/338679
Inventors:

Erhan Ozalevli - Dallas TX, US
Luthuli E. Dake - Mckinney TX, US
Gregory Romas - Mckinney TX, US
Gary L. Wakeman - Wylie TX, US
Assignee:

Texas Instruments Incorporated - Dallas TX
International Classification:

G05F 3/16
H01L 35/00
US Classification:

323313, 323315, 327513
Abstract:

Methods and apparatus for higher-order correction of bandgap voltage references are disclosed. An example bandgap voltage reference circuit disclosed herein comprises a bandgap voltage generation circuit comprising a first resistor, the bandgap voltage generation circuit configured to generate a proportional-to-absolute-temperature current to drive the first resistor to produce a first voltage, the first voltage contributing to an output bandgap voltage, and a first correction circuit electrically coupled to the first resistor and configured to provide a first correction current, the first correction circuit comprising a first nonlinear device configured to generate the first correction current only within a first temperature range, the first correction current decreasing with increasing temperature, the first correction current to drive the first resistor to increase the first voltage only within the first temperature range.

Voltage Regulator With Quasi Floating Gate Pass Element
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US Patent:

8044646, Oct 25, 2011
Filed:

Apr 10, 2009
Appl. No.:

12/422218
Inventors:

Erhan Ozalevli - Dallas TX, US
Luthuli E. Dake - Mckinney TX, US
Gregory Romas - Mckinney TX, US
Assignee:

Texas Instruments Incorporated - Dallas TX
International Classification:

G05F 1/565
US Classification:

323274, 323275
Abstract:

Various apparatuses, methods and systems for a voltage regulator are disclosed herein. For example, some embodiments provide an apparatus for regulating a voltage including an N-channel transistor that is connected between an input and an output, an error amplifier that is connected to the output, a capacitor that is connected between the error amplifier and a gate of the N-channel transistor, and a comparator that is connected to a node between the error amplifier and the capacitor. The apparatus also includes a charge pump that is switchably connected to the gate of the N-channel transistor. The apparatus is adapted to connect the charge pump to the gate of the N-channel transistor when a voltage at the node between the error amplifier and the capacitor rises above a threshold voltage.

Low Current Blow Trim Fuse
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US Patent:

20030025178, Feb 6, 2003
Filed:

Aug 6, 2001
Appl. No.:

09/923589
Inventors:

Gregory Romas - McKinney TX, US
Rex Pirkle - Denison TX, US
International Classification:

H01L029/00
US Classification:

257/529000
Abstract:

A low current blow trim fuse structure and method of forming the trim fuse structure. Oxide steps are placed beneath a trim fuse during prior processing steps. The oxide steps will cause the metal (or polycrystal silicon (poly)) to thin at the point where the metal (or poly) transitions the step, and thus will reduce its cross-sectional area and current carrying capability, making it easier to program the fuse. The oxide steps will serve a further purpose in that, to some extent, it will thermally isolate the trim fuse, thereby causing local heating, making the fuse easier to blow.

Methods And Apparatus For Trimming Electrical Devices
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US Patent:

20030193361, Oct 16, 2003
Filed:

Apr 12, 2002
Appl. No.:

10/121193
Inventors:

Gregory Romas - McKinney TX, US
Jian Wang - McKinney TX, US
International Classification:

H03L005/00
US Classification:

327/308000
Abstract:

Trimming methods and apparatus are disclosed for selectively removing resistance between first and second nodes in an electrical device, including trim circuits comprising a resistor and a diode formed in the resistor body having a conductive portion which may be selectively melted to short the resistor. A multi-bit trim cell is disclosed having trim cells individually comprising a resistor with a diode formed in the resistor body for selectively shorting the resistor, and a fuse for selectively disconnecting the diode from a trim pad.

Buried Zener Diode Structure And Method Of Manufacture
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US Patent:

20040000700, Jan 1, 2004
Filed:

Jun 19, 2003
Appl. No.:

10/465748
Inventors:

Gregory Romas - McKinney TX, US
Darrel Oglesby - Sherman TX, US
International Classification:

H01L029/861
US Classification:

257/603000
Abstract:

A buried Zener diode structure and method of manufacture requires no additional process steps beyond those required in a basic standard bipolar flow with up-down isolation. The buried Zener diode has its N++/P+ junction removed from the silicon surface.

Low Current Blow Trim Fuse
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US Patent:

20040017674, Jan 29, 2004
Filed:

Jun 24, 2003
Appl. No.:

10/602782
Inventors:

Gregory Romas - McKinney TX, US
Rex Pirkle - Denison TX, US
International Classification:

H02B001/18
H01H085/20
H05K007/00
US Classification:

361/837000, 029/623000, 029/846000, 361/833000
Abstract:

A low current blow trim fuse structure and method of forming the trim fuse structure. Oxide steps are placed beneath a trim fuse during prior processing steps. The oxide steps will cause the metal (or polycrystal silicon (poly)) to thin at the point where the metal (or poly) transitions the step, and thus will reduce its cross-sectional area and current carrying capability, making it easier to program the fuse. The oxide steps will serve a further purpose in that, to some extent, it will thermally isolate the trim fuse, thereby causing local heating, making the fuse easier to blow.

Vertical Bipolar Transistor And A Method Of Manufacture Therefor
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US Patent:

20040169257, Sep 2, 2004
Filed:

Feb 28, 2003
Appl. No.:

10/377053
Inventors:

Gregory Romas - McKinney TX, US
Darrel Oglesby - Sherman TX, US
Scott Jasper - Sherman TX, US
Philip Najfus - Sherman TX, US
Venkatesh Govindaraju - McKinney TX, US
ChunLiang Yeh - Allen TX, US
James Lisenby - Sherman TX, US
Assignee:

Texas Instruments Incorporated - Dallas TX
International Classification:

H01L027/082
US Classification:

257/565000
Abstract:

The present invention provides a vertical bipolar transistor , a method of manufacture therefor, and an integrated circuit including the same. The vertical bipolar transistor may include, in one embodiment, a second epitaxial layer located over a first epitaxial layer , wherein the second epitaxial layer includes at least two dopant profiles . The vertical bipolar transistor may further include a collector , a base and an emitter located over or within the second epitaxial layer

System And Method For Providing Led Tube Lights With Integrated Sensors
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US Patent:

20140233226, Aug 21, 2014
Filed:

Feb 21, 2013
Appl. No.:

13/772480
Inventors:

- Bethesda MD, US
Gregory G. Romas - Coppell TX, US
Jatin N. Mehta - Arlington TX, US
David L. Hoelscher - Arlington TX, US
Assignee:

Lockheed Martin Corporation - Bethesda MD
International Classification:

F21V 33/00
F21V 19/00
US Classification:

362221, 29832
Abstract:

A system is presented including a tube light mounted in a tube light socket. The tube light includes a printed wiring board, one or more LEDs mounted to the printed wiring board, and one or more sensors mounted to the printed wiring board. The tube light also includes a power supply mounted to the printed wiring board, such that the power supply is connected to the tube light socket to supply a direct current voltage signal to the printed wiring board. A method is also provided for forming the tube light and mounting the tube light into the tube light socket.