Gregory A Snider

US Patent:

20170098716, Apr 6, 2017

Filed:

Feb 23, 2015

Appl. No.:

14/629222

Inventors:

- Notre Dame IN, US
David Esseni - Udine, IT
Gregory Snider - Notre Dame IN, US
Debdeep Jena - Notre Dame IN, US
Huili Grace Xing - Notre Dame IN, US

International Classification:

H01L 29/786
H01L 29/18
H01L 29/15

Abstract:

A two-dimensional (2D) heterojunction interlayer tunneling field effect transistor (Thin-TFET) allows for particle tunneling in a vertical stack comprising monolayers of two-dimensional semiconductors separated by an interlayer. In some examples, the two 2D materials may be misaligned so as to influence the magnitude of the tunneling current, but have a modest impact on gate voltage dependence. The Thin-TFET can achieve very steep subthreshold swing, whose lower limit is ultimately set by the band tails in the energy gaps of the 2D materials produced by energy broadening. These qualities in turn make the Thin-TFET an ideal low voltage, low energy solid state electronic switch.