A technical management role at A company for solar energy solutions
Location:
United States
Industry:
Renewables & Environment
Work:
A company for solar energy solutions since Jul 2012
A technical management role
Sunpreme, Inc - San Francisco Bay Area Mar 2012 - Jul 2012
Manager, Si Surface Engineering
Sunpreme, Inc - Sunnyvale Aug 2010 - Mar 2012
Member of Technical Staff
Silevo, Inc. (Previously, Sierra Solar power, Inc.) - Fremont, California May 2009 - Aug 2010
Senior Process Development Engineer
Silevo, Inc. (Previously, Sierra Solar Power, Inc) - Fremont, California Jan 2008 - May 2009
Process Development Engineer
Education:
The University of Texas at Arlington 2003 - 2007
Ph.D, Materials Science and Engineering
Texas Christian University 2000 - 2003
M.S., Physics
Peking University 1990 - 1995
B.S., Physics
Jianming Fu - Palo Alto CA, US Zheng Xu - Pleasanton CA, US Peijun Ding - Saratoga CA, US Chentao Yu - Sunnyvale CA, US Guanghua Song - Fremont CA, US Jianjun Liang - Fremont CA, US
Assignee:
SIERRA SOLAR POWER, INC. - Sunnyvale CA
International Classification:
H01L 31/0288
US Classification:
136255, 117 78
Abstract:
One embodiment of the present invention provides a method for fabricating a solar cell. The method includes: melting a metallurgical-grade (MG) Si feedstock, lowering a single-crystalline Si seed to touch the surface of the molten MG-Si, slowly pulling out a single-crystal Si ingot of the molten MG-Si, processing the Si ingot into single crystal Si wafers to form MG-Si substrates for subsequent epitaxial growth, leaching out residual metal impurities in the MG-Si substrate, epitaxially growing a layer of single-crystal Si thin film doped with boron on the MG-Si substrate, doping phosphor to the single-crystal Si thin film to form an emitter layer, depositing an anti-reflection layer on top of the single-crystal Si thin film, and forming the front and the back electrical contacts.
Substrates for solar cells are prepared by the reverse of the standard RCA clean. The substrates are first cleaned in RCA-2 solution and then in RCA-1 solution. A pyramids rounding step using HF/HNOsolution is inserted between the two RCA clean procedures. This solves all the issues relating to surface contaminations and sharp areas. It also avoids the stain layer on the surface to some extent by RCA-1 treatment. A thin layer of amorphous or micro-crystalline intrinsic silicon may be deposited to passivate the surface.
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