Guo D Li

US Patent:

7039258, May 2, 2006

Filed:

Aug 13, 2004

Appl. No.:

10/917927

Inventors:

Roger Koumans - Irvine CA, US
Bing Li - San Diego CA, US
Guo Liang Li - San Diego CA, US
Thierry J. Pinguet - Cardif-By-The-Sea CA, US

Assignee:

Luxtera, Inc. - Carlsbad CA

International Classification:

G02F 1/025

US Classification:

385 1, 385 3, 385 14

Abstract:

High speed optical modulators can be made of k modulators connected in series disposed on one of a variety of semiconductor substrates. An electrical signal propagating in a microwave transmission line is tapped off of the transmission line at regular intervals and is amplified by k distributed amplifiers. Each of the outputs of the k distributed amplifiers is connected to a respective one of the k modulators. Distributed amplifier modulators can have much higher modulating speeds than a comparable lumped element modulator, due to the lower capacitance of each of the k modulators. Distributed amplifier modulators can have much higher modulating speeds than a comparable traveling wave modulator, due to the impedance matching provided by the distributed amplifiers.

US Patent:

7085443, Aug 1, 2006

Filed:

Aug 11, 2004

Appl. No.:

10/916857

Inventors:

Roger Koumans - Irvine CA, US
Bing Li - San Diego CA, US
Guo Liang Li - San Diego CA, US
Thierry J. Pinguet - Cardif-by-the-Sea CA, US

Assignee:

Luxtera, Inc. - Carlsbad CA

International Classification:

G02F 1/035
G02B 6/12

US Classification:

385 14, 385 3, 385 40, 359245

Abstract:

High speed optical modulators can be made of a lateral PN diode formed in a silicon optical waveguide, disposed on a SOI or other silicon based substrate. A PN junction is formed at the boundary of the P and N doped regions. The depletion region at the PN junction overlaps with the center of a guided optical mode propagating through the waveguide. Electrically modulating a lateral PN diode causes a phase shift in an optical wave propagating through the waveguide. Each of the doped regions can have a stepped or gradient doping profile within it or several doped sections with different doping concentrations. Forming the doped regions of a PN diode modulator with stepped or gradient doping profiles can optimize the trade off between the series resistance of the PN diode and the optical loss in the center of the waveguide due to the presence of dopants.

US Patent:

7116853, Oct 3, 2006

Filed:

Aug 11, 2004

Appl. No.:

10/917204

Inventors:

Roger Koumans - Irvine CA, US
Bing Li - San Diego CA, US
Guo Liang Li - San Diego CA, US
Thierry J. Pinguet - Cardif-by-the-Sea CA, US

Assignee:

Luxtera, Inc. - Carlsbad CA

International Classification:

G02B 6/12

US Classification:

385 14, 385 3, 257499

Abstract:

High speed optical modulators can be made of a reverse biased lateral PN diode formed in a silicon rib optical waveguide disposed on a SOI or other silicon based substrate. A PN junction is formed at the boundary of the P and N doped regions. The depletion region at the PN junction overlaps with the center of a guided optical mode propagating through the waveguide. Electrically modulating a reverse biased lateral PN diode causes a phase shift in an optical wave propagating through the waveguide. Prior art forward biased PN and PIN diode modulators have been relatively low speed devices.

US Patent:

7136544, Nov 14, 2006

Filed:

Aug 11, 2004

Appl. No.:

10/916839

Inventors:

Roger Koumans - Irvine CA, US
Bing Li - San Diego CA, US
Guo Liang Li - San Diego CA, US
Thierry J. Pinguet - Cardif-by-the-Sea CA, US

Assignee:

Luxtera, Inc. - Carlsbad CA

International Classification:

G02F 1/025
G02B 6/10

US Classification:

385 3, 385129, 385 14

Abstract:

High speed optical modulators can be made of a lateral PN diode formed in a strip loaded optical waveguide on a SOI or other silicon based substrate. A PN junction is formed at the boundary of the P and N doped regions. The depletion region at the PN junction overlaps with the center of a guided optical mode propagating through the waveguide. Electrically modulating a lateral PN diode causes a phase shift in an optical wave propagating through the waveguide. Due to differences in fabrication methods, forming strip loaded waveguides with consistent properties for use in PN diode optical modulators is much easier than fabricating similar rib waveguides.

US Patent:

7251408, Jul 31, 2007

Filed:

Apr 5, 2006

Appl. No.:

11/400163

Inventors:

Roger Koumans - Irvine CA, US
Bing Li - San Diego CA, US
Guo Liang Li - San Diego CA, US
Thierry J. Pinguet - Cardif-By-The-Sea CA, US

Assignee:

Luxtera, Inc. - Carlsbad CA

International Classification:

G02B 6/10
G02B 6/26
G02F 1/035

US Classification:

385132, 385 3, 385 40

Abstract:

High speed optical modulators can be made of a lateral PN diode formed in a silicon optical rib waveguide, disposed on a SOI or other silicon based substrate. A PN junction is formed at the boundary of the P and N doped regions. The depletion region at the PN junction overlaps with the center of a guided optical mode propagating through the waveguide. Electrically modulating a lateral PN diode causes a phase shift in an optical wave propagating through the waveguide. Each of the doped regions can have a stepped or gradient doping profile within it or several doped sections with different doping concentrations. Forming the doped regions of a PN diode modulator with stepped or gradient doping profiles can optimize the trade off between the series resistance of the PN diode and the optical loss in the center of the waveguide due to the presence of dopants.