Hadong S Kim from 21 Westwind Dr, Methuen, MA 01844, age 59, Phone: 9787380714

Hadong Kim Phones & Addresses

Spectroscopy • Materials Science • R&D • Physics • Research • Characterization • Science • Radiation Detectors • Semiconductors • Matlab

Korean

Research

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Location:

Methuen, MA

Industry:

Research

Work:

Radiation Monitoring Devices, Inc.
Senior Scientist

Education:

University of Massachusetts Lowell

Skills:

Spectroscopy
Materials Science
R&D
Physics
Research
Characterization
Science
Radiation Detectors
Semiconductors
Matlab

Languages:

Korean

Radiation Detector And Detection Method Having Reduced Polarization
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US Patent:

20100116998, May 13, 2010
Filed:

Apr 20, 2007
Appl. No.:

11/996007
Inventors:

Hadong Kim - Methuen MA, US
International Classification:

G01T 1/29
US Classification:

2503701
Abstract:

A direct conversion radiation detector includes a detector body made from a direct conversion material, a plurality of segmented electrode members operatively coupled to a radiation-receiving side of the detector body and at least one electrode operatively coupled to a second side of the detector body. The radiation detector is configured such that received radiation is incident on the segmented electrode members. The radiation detector provides reduced polarization effects for a variety of high flux radiation detection applications.

Mixed Ionic-Electronic Conductor-Based Radiation Detectors And Methods Of Fabrication
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US Patent:

20130026364, Jan 31, 2013
Filed:

Apr 26, 2012
Appl. No.:

13/457396
Inventors:

Adam Conway - Livermore CA, US
Patrick R. Beck - Livermore CA, US
Robert T. Graff - Modesto CA, US
Art Nelson - Livermore CA, US
Rebecca J. Nikolic - Oakland CA, US
Stephen A. Payne - Castro Valley CA, US
Lars Voss - Livermore CA, US
Hadong Kim - Methuen MA, US
Assignee:

Lawrence Livermore National Security LLC - Livermore CA
International Classification:

G01T 1/16
C23C 14/48
H01B 13/00
B32B 9/00
B05D 5/12
US Classification:

2503361, 428696, 427 58, 216 13, 427523
Abstract:

A method of fabricating a mixed ionic-electronic conductor (e.g. TlBr)-based radiation detector having halide-treated surfaces and associated methods of fabrication, which controls polarization of the mixed ionic-electronic MIEC material to improve stability and operational lifetime.

Radiation Detectors
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US Patent:

20170279001, Sep 28, 2017
Filed:

Nov 7, 2016
Appl. No.:

15/344853
Inventors:

- Watertown MA, US
Andrey Gueorguiev - Burlington MA, US
Leonard Cirignano - Cambridge MA, US
Hadong Kim - Methuen MA, US
Alireza Kargar - Watertown MA, US
Assignee:

Radiation Monitoring Devices, Inc. - Watertown MA
International Classification:

H01L 31/08
H01L 31/032
G01T 1/24
Abstract:

A detector for detecting radiation is generally described. The detector can comprise at least one ionic semiconductor material. For example, the ionic semiconductor material comprises a thallium halide and/or an indium halide. Electrical contacts are formed on the semiconductor material to provide a voltage to the detector during use. At least one of the electrical contacts may comprise a liquid that contains ions. In some instances, at least one electrical contact comprises a metal, such as Cr, Ti, W, Mo, or Pb. In some embodiments, the detector comprises both an electrical contact comprising liquid comprising ions and an electrical contact comprising a metal selected from a group consisting of Cr, Ti, W, Mo, and Pb. Detectors for detecting radiation, as described herein, may have beneficial properties.