Han Lin

US Patent:

7633130, Dec 15, 2009

Filed:

Mar 19, 2007

Appl. No.:

11/725350

Inventors:

Tobin J. Marks - Evanston IL, US
Peide Ye - West Lafayette IN, US
Antonio Facchetti - Chicago IL, US
Gang Lu - Midland MI, US
Han Chung Lin - West Lafayette IN, US

Assignee:

Northwestern University - Evanston IL

International Classification:

H01L 29/76

US Classification:

257411, 257 40, 257289, 257E29255

Abstract:

Field effect transistor devices comprising III-V semiconductors and organic gate dielectric materials, such dielectric materials as can afford flexibility in device design and fabrication.

US Patent:

20080048216, Feb 28, 2008

Filed:

May 25, 2007

Appl. No.:

11/753993

Inventors:

Peide Ye - West Lafayette IN, US
Yi Xuan - West Lafayette IN, US
Han Lin - West Lafayette IN, US

International Classification:

H01L 21/335
H01L 29/78

US Classification:

257288000, 438291000, 257E21400, 257E29255

Abstract:

A method for forming a metal oxide semiconductor field-effect transistor (MOSFET) includes forming a III-V compound semiconductor on a substrate with the III-V compound semiconductor being doped with a first dopant type. The method further includes doping a first and second region of the III-V compound semiconductor with a second dopant type to form a drain and a source of the MOSFET. The method further includes forming a gate dielectric on the III-V compound semiconductor through atomic layer deposition. The method further includes applying a metal onto the dielectric to form a gate of the MOSFET. A MOSFET is also disclosed herein.