Hareesh Thridandam

US Patent:

6896955, May 24, 2005

Filed:

Aug 13, 2002

Appl. No.:

10/219164

Inventors:

Robert P. Mandal - Saratoga CA, US
Alexandros T. Demos - San Ramon CA, US
Timothy Weidman - Sunnyvale CA, US
Michael P. Nault - San Jose CA, US
Nikolaos Bekiaris - San Jose CA, US
Scott J. Weigel - Allentown PA, US
Lee A. Senecal - Vista CA, US
James E. MacDougal - New Tripoli PA, US
Hareesh Thridandam - Vista CA, US

Assignee:

Air Products & Chemicals, Inc. - Allentown PA
Applied Materials, Inc. - Santa Clara CA

International Classification:

B32B003/00

US Classification:

4283126, 4283044, 438787, 438960

Abstract:

A process for depositing porous silicon oxide-based films using a sol-gel approach utilizing a precursor solution formulation which includes a purified nonionic surfactant and an additive among other components, where the additive is either an ionic additive or an amine additive which forms an ionic ammonium type salt in the acidic precursor solution. Using this precursor solution formulation enables formation of a film having a dielectric constant less than 2. 5, appropriate mechanical properties, and minimal levels of alkali metal impurities. In one embodiment, this is achieved by purifying the surfactant and adding ionic or amine additives such as tetraalkylammonium salts and amines to the stock precursor solution. In some embodiments, the ionic additive is a compound chosen from a group of cationic additives of the general composition [NR(CH)]A, where R is a hydrophobic ligand of chain length 1 to 24, including tetramethylammonium and cetyltrimethylammonium, and A is an anion, which may be chosen from the group consisting essentially of formate, nitrate, oxalate, acetate, phosphate, carbonate, and hydroxide and combinations thereof. Tetramethylammonium salts, or more generally tetraalkylammonium salts, or tetraorganoammonium salts or organoamines in acidic media are added to surfactant templated porous oxide precursor formulations to increase the ionic content, replacing alkali ion impurities (sodium and potassium) removed during surfactant purification, but which are found to exhibit beneficial effects in promoting the formation of the resulting dielectric.

US Patent:

7064224, Jun 20, 2006

Filed:

Feb 4, 2005

Appl. No.:

11/051140

Inventors:

Xinjian Lei - Vista CA, US
Manchao Xiao - San Diego CA, US
Hareesh Thridandam - Vista CA, US
Kirk Scott Cuthill - Vista CA, US

Assignee:

Air Products and Chemicals, Inc. - Allentown PA

International Classification:

C07F 7/10
H01L 21/44
C23C 16/00

US Classification:

556 9, 42725528, 42725531, 427587, 427593, 438681

Abstract:

This invention is related to organometallic precursors and deposition processes for fabricating conformal metal containing films on substrates such as silicon, metal nitrides and other metal layers. The organometallic precursors are N,N′-alkyl-1,1-alkylsilylamino metal complexes represented by the formula:.

US Patent:

7265062, Sep 4, 2007

Filed:

Aug 7, 2003

Appl. No.:

10/636517

Inventors:

Robert P. Mandal - Saratoga CA, US
Alexandros T. Demos - Fremont CA, US
Timothy Weidman - Sunnyvale CA, US
Michael P. Nault - San Jose CA, US
Nikolaos Bekiaris - San Jose CA, US
Scott Jeffrey Weigel - Allentown PA, US
Lee A. Senecal - Vista CA, US
James E. Mac Dougall - New Tripoli PA, US
Hareesh Thridandam - Vista CA, US

Assignee:

Applied Materials, Inc. - Santa Clara CA
Air Products and Chemicals, Inc. - Allentown PA

International Classification:

H01L 21/31

US Classification:

438780, 438781, 438782, 257E21273

Abstract:

A process for depositing porous silicon oxide-based films using a sol-gel approach utilizing a precursor solution formulation which includes a purified nonionic surfactant and an additive among other components, where the additive is either an ionic additive or an amine additive which forms an ionic ammonium type salt in the acidic precursor solution. Using this precursor solution formulation enables formation of a film having a dielectric constant less than 2. 5, appropriate mechanical properties, and minimal levels of alkali metal impurities. In one embodiment, this is achieved by purifying the surfactant and adding ionic or amine additives such as tetraalkylammonium salts and amines to the stock precursor solution.

US Patent:

7582574, Sep 1, 2009

Filed:

May 10, 2007

Appl. No.:

11/747019

Inventors:

Robert Daniel Clark - Schenectady NY, US
Hareesh Thridandam - Vista CA, US
Kirk Scott Cuthill - Vista CA, US
Arthur Kenneth Hochberg - Solana Beach CA, US

Assignee:

Air Products and Chemicals, Inc. - Allentown PA

International Classification:

H01L 21/31
H01L 21/469

US Classification:

438785, 257E21295, 257E21009, 427255394, 42725532

Abstract:

A method for forming a metal silicate as a high k dielectric in an electronic device, comprising the steps of: providing diethylsilane to a reaction zone; concurrently providing a source of oxygen to the reaction zone; concurrently providing a metal precursor to the reaction zone; reacting the diethylsilane, source of oxygen and metal precursor by chemical vapor deposition to form a metal silicate on a substrate comprising the electronic device. The metal is preferably hafnium, zirconium or mixtures thereof. The dielectric constant of the metal silicate film can be tuned based upon the relative atomic concentration of metal, silicon, and oxygen in the film.

US Patent:

7678422, Mar 16, 2010

Filed:

Dec 4, 2007

Appl. No.:

11/949868

Inventors:

Xinjian Lei - Vista CA, US
Hareesh Thridandam - Vista CA, US
Manchao Xiao - San Diego CA, US
Heather Regina Bowen - Vista CA, US
Thomas Richard Gaffney - Carlsbad CA, US

Assignee:

Air Products and Chemicals, Inc. - Allentown PA

International Classification:

C23C 16/18
C23C 16/30

US Classification:

42725529, 42725531, 42725536, 427255394, 118 84, 118 88

Abstract:

A process to deposit metal silicon nitride on a substrate comprising: sorbing a metal amide on a heated substrate, purging away the unsorbed metal amide, contacting a silicon-containing source having one or more Si—Hfragments with the heated substrate to react with the sorbed metal amide, wherein the silicon-containing source has one or more HSi—NR(R═SiH, R, Ror R, defined below) groups selected from the group consisting of one or more of:.

US Patent:

7875312, Jan 25, 2011

Filed:

May 23, 2006

Appl. No.:

11/439554

Inventors:

Hareesh Thridandam - Vista CA, US
Manchao Xiao - San Diego CA, US
Xinjian Lei - Vista CA, US
Thomas Richard Gaffney - Carlsbad CA, US

Assignee:

Air Products and Chemicals, Inc. - Allentown PA

International Classification:

C23C 16/00

US Classification:

4272481

Abstract:

The present invention is directed to a method for depositing a silicon oxide layer on a substrate by CVD. The reaction of an organoaminosilane precursor where the alkyl group has at least two carbon atoms in the presence of an oxidizing agent allows for the formation of a silicon oxide film. The organoaminosilanes are represented by the formulas:The use of diisopropylaminosilane is the preferred precursor for the formation of the silicon oxide film.

US Patent:

20020042210, Apr 11, 2002

Filed:

Mar 29, 2001

Appl. No.:

09/823932

Inventors:

Robert Mandal - Saratoga CA, US
Alexandros Demos - San Ramon CA, US
Timothy Weidman - Sunnyvale CA, US
Michael Nault - San Jose CA, US
Nikolaos Bekiaris - San Jose CA, US
Scott Weigel - Allentown PA, US
Lee Senecal - Vista CA, US
James MacDougall - New Tripoli PA, US
Hareesh Thridandam - Vista CA, US

International Classification:

H01L021/31
H01L021/469

US Classification:

438/780000, 438/790000

Abstract:

A process for depositing porous silicon oxide-based films using a sol-gel approach utilizing a precursor solution formulation which includes a purified nonionic surfactant and an additive among other components, where the additive is either an ionic additive or an amine additive which forms an ionic ammonium type salt in the acidic precursor solution. Using this precursor solution formulation enables formation of a film having a dielectric constant less than 2.5, appropriate mechanical properties, and minimal levels of alkali metal impurities. In one embodiment, this is achieved by purifying the surfactant and adding ionic or amine additives such as tetraalkylammonium salts and amines to the stock precursor solution. In some embodiments, the ionic additive is a compound chosen from a group of cationic additives of the general composition [NR(CH)]A, where R is a hydrophobic ligand of chain length 1 to 24, including tetramethylammonium and cetyltrimethylammonium, and A is an anion, which may be chosen from the group consisting essentially of formate, nitrate, oxalate, acetate, phosphate, carbonate, and hydroxide and combinations thereof. Tetramethylammonium salts, or more generally tetraalkylammonium salts, or tetraorganoammonium salts or organoamines in acidic media are added to surfactant templated porous oxide precursor formulations to increase the ionic content, replacing alkali ion impurities (sodium and potassium) removed during surfactant purification, but which are found to exhibit beneficial effects in promoting the formation of the resulting dielectric.

US Patent:

20060182885, Aug 17, 2006

Filed:

Feb 14, 2005

Appl. No.:

11/057446

Inventors:

Xinjian Lei - Vista CA, US
Hareesh Thridandam - Vista CA, US
Kirk Cuthill - Vista CA, US
Arthur Hochberg - Solana Beach CA, US

International Classification:

C23C 16/00

US Classification:

427248100

Abstract:

This invention relates to an improved process for producing ternary metal silicon nitride films by the cyclic deposition of the precursors. The improvement resides in the use of a metal amide and a silicon source having both NH and SiH functionality as the precursors leading to the formation of such metal-SiN films. The precursors are applied sequentially via cyclic deposition onto the surface of a substrate. Exemplary silicon sources are monoalkylamino silanes and hydrazinosilanes represented by the formulas: (RNH)SiRH(n=1,2; m=0,1,2; =