Henry Nye

US Patent:

20040219384, Nov 4, 2004

Filed:

May 1, 2003

Appl. No.:

10/426725

Inventors:

Emanuel Cooper - Scarsdale NY, US
Charles Goldsmith - Poughkeepsie NY, US
Stephen Kilpatrick - Lagrangeville NY, US
Carmen Mojica - Dorado PR, US
Henry Nye - Brookfield CT, US

Assignee:

International Business Machines Corporation

International Classification:

B32B015/00

US Classification:

428/646000, 428/615000, 428/936000

Abstract:

A first metal is plated onto a substrate comprising a second metal by immersing the substrate into a bath comprising a compound of the first metal and an organic diluent. The second metal is more electropositive than the first metal. The organic diluent has a boiling point higher than a eutectic point in a phase diagram of the first and second metals. The bath is operated above the eutectic point but below the melting point of the second metal. For example, bismuth is immersion plated onto lead-free tin-based solder balls, and subsequently redistributed by fluxless reflow. Plated structures are also provided.

US Patent:

20050026450, Feb 3, 2005

Filed:

Jul 30, 2003

Appl. No.:

10/604560

Inventors:

Emanuel Cooper - Scarsdale NY, US
John Cotte - New Fairfield CT, US
Lisa Fanti - Hopewell Junction NY, US
David Eichstadt - North Salem NY, US
Stephen Kilpatrick - Lagrangeville NY, US
Henry Nye - Brookfield CT, US

Assignee:

INTERNATIONAL BUSINESS MACHINES CORPORATION - Armonk NY

International Classification:

H01L021/44
H01L021/302

US Classification:

438745000, 438687000

Abstract:

A method is provided for removing exposed seed layers in the fabrication of solder interconnects on electronic components such as semiconductor wafers without damaging the interconnects or underlying wafer substrate and with a high wafer yield. The solder interconnects are lead free or substantially lead free and typically contain Sn. An oxalic acid solution is used to contact the wafer after an etching step to remove part of the seed layer. The seed layer is typically a Cu containing layer with a lower barrier layer containing barrier metals such as Ti, Ta and W. The lower barrier layer remains after the etch and the oxalic acid solution inhibits the formation of Sn compounds on the barrier layer surface which compounds may mask the barrier layer and the barrier layer etchant resulting in incomplete barrier layer removal on the wafer surface. Any residual conductive barrier layer can cause shorts and other wafer problems and result in a lower wafer yield. An electroetch is preferred to remove the portion of the seed layer overlying the lower barrier layer.

US Patent:

20050238906, Oct 27, 2005

Filed:

Jun 28, 2005

Appl. No.:

11/167277

Inventors:

Emanuel Cooper - Scarsdale NY, US
Charles Goldsmith - Poughkeepsie NY, US
Stephen Kilpatrick - Lagrangeville NY, US
Carmen Mojica - Dorado PR, US
Henry Nye - Brookfield CT, US

Assignee:

International Business Machines Corporation - Armonk NY

International Classification:

B32B015/01
C25D003/60

US Classification:

428646000, 205253000

Abstract:

A first metal is plated onto a substrate comprising a second metal by immersing the substrate into a bath comprising a compound of the first metal and an organic diluent. The second metal is more electropositive than the first metal. The organic diluent has a boiling point higher than a eutectic point in a phase diagram of the first and second metals. The bath is operated above the eutectic point but below the melting point of the second metal. For example, bismuth is immersion plated onto lead-free tin-based solder balls, and subsequently redistributed by fluxless reflow. Plated structures are also provided.

US Patent:

61331368, Oct 17, 2000

Filed:

May 19, 1999

Appl. No.:

9/314003

Inventors:

Daniel Charles Edelstein - New Rochelle NY
Vincent McGahay - Poughkeepsie NY
Henry A. Nye - Brookfield CT
Brian George Reid Ottey - Poughkeepsie NY
William H. Price - Cortlandt Manor NY

Assignee:

International Business Machines Corporation - Armonk NY

International Classification:

H01L 214763

US Classification:

438618

Abstract:

A structure comprising a layer of copper, a barrier layer, a layer of AlCu, and a pad-limiting layer, wherein the layer of AlCu and barrier layer are interposed between the layer of copper and pad-limiting layer.