Hitoshi Ishiwata

US Patent:

20130336873, Dec 19, 2013

Filed:

Mar 15, 2013

Appl. No.:

13/837138

Inventors:

Hitoshi Ishiwata - Stanford CA, US
Nicholas A. Melosh - Stanford CA, US
Jeremy Dahl - Stanford CA, US

International Classification:

C30B 25/18
C30B 29/04

US Classification:

423446, 117 95

Abstract:

Methods of growing diamond and resulting diamond nanoparticles and diamond films are described herein. An example of a method of growing diamond includes: (1) anchoring diamondoids to a substrate via chemical bonding between the diamondoids and the substrate; (2) forming a protective layer over the diamondoids; and (3) performing chemical vapor deposition using a carbon source to induce diamond growth over the protective layer and the diamondoids.