Ho C Kim

US Patent:

20210209490, Jul 8, 2021

Filed:

Jan 7, 2021

Appl. No.:

17/143536

Inventors:

- San Francisco CA, US
Xiaoyuan Yang - Pleasanton CA, US
Ho Jin Kim - San Francisco CA, US
Steven Ward - Moraga CA, US

International Classification:

G06N 5/04
G06N 20/00

Abstract:

In some embodiments, a computer-implemented method for predicting agronomic field property data for one or more agronomic fields using a trained machine learning model is disclosed. The method comprises receiving, at an agricultural intelligence computer system, agronomic training data; training a machine learning model, at the agricultural intelligence computer system, using the agronomic training data; in response to receiving a request from a client computing device for agronomic field property data for one or more agronomic fields, automatically predicting the agronomic field property data for the one or more agronomic fields using the machine learning model configured to predict agronomic field property data; based on the agronomic field property data, automatically generating a first graphical representation; and causing to display the first graphical representation on the client computing device.

US Patent:

20150064880, Mar 5, 2015

Filed:

Aug 30, 2013

Appl. No.:

14/015780

Inventors:

- Santa Clara CA, US
Hun Sang KIM - San Ramon CA, US
Changhun LEE - San Jose CA, US
Ho Jeong KIM - San Jose CA, US
Yi ZHOU - Fremont CA, US

International Classification:

H01L 21/322

US Classification:

438474

Abstract:

Methods for performing post etch treatments on silicon surfaces etched using halogen chemistry are provided. The methods may be performed in-situ a chamber in which the silicon surfaces where etch, ex-situ the chamber, or in a hybrid process that combines both in-situ and ex-situ post etch treatment processes. In one embodiment the post etch treatment process includes exposing a substrate having a silicon surface etched using halogen chemistry to a gas mixture comprising CHand oxygen, wherein x and y are integers, forming a plasma from the gas mixture, binding halogen residues with species comprising the plasma to form non-volatile halogen containing elements, and pumping the non-volatile halogen containing elements from a chamber containing the substrate.