Hong Shen

US Patent:

20140002188, Jan 2, 2014

Filed:

Jun 13, 2013

Appl. No.:

13/917384

Inventors:

Yifan Guo - Irvine CA, US
Mehran Janani - Oak Park CA, US
Tin Myint Ko - Newbury Park CA, US
Philip John Lehtola - Cedar Rapids IA, US
Anthony James LoBianco - Irvine CA, US
Hardik Bhupendra Modi - Irvine CA, US
Hoang Mong Nguyen - Fountain Valley CA, US
Matthew Thomas Ozalas - Novato CA, US
Sandra Louise Petty-Weeks - Newport Beach CA, US
Matthew Sean Read - Rancho Santa Margarita CA, US
Jens Albrecht Riege - Ojai CA, US
David Steven Ripley - Marion IA, US
Hongxiao Shao - Thousand Oaks CA, US
Hong Shen - Oak Park CA, US
Weimin Sun - Santa Rosa Valley CA, US
Hsiang-Chih Sun - Thousand Oaks CA, US
Patrick Lawrence Welch - Campbell CA, US
Guohao Zhang - Nanjing, CN

Assignee:

SKYWORKS SOLUTIONS, INC. - Woburn MA

International Classification:

H03F 3/19

US Classification:

330250

Abstract:

A power amplifier module includes a power amplifier including a GaAs bipolar transistor having a collector, a base abutting the collector, and an emitter, the collector having a doping concentration of at least about 3×10cmat a junction with the base, the collector also having at least a first grading in which doping concentration increases away from the base; and an RF transmission line driven by the power amplifier, the RF transmission line including a conductive layer and finish plating on the conductive layer, the finish plating including a gold layer, a palladium layer proximate the gold layer, and a diffusion barrier layer proximate the palladium layer, the diffusion barrier layer including nickel and having a thickness that is less than about the skin depth of nickel at 0.9 GHz. Other embodiments of the module are provided along with related methods and components thereof.

US Patent:

20150326181, Nov 12, 2015

Filed:

Apr 14, 2015

Appl. No.:

14/686559

Inventors:

- Woburn MA, US
Yifan Guo - Irvine CA, US
Dinhphuoc Vu Hoang - Anaheim CA, US
Mehran Janani - Oak Park CA, US
Tin Myint Ko - Newbury Park CA, US
Philip John Lehtola - Cedar Rapids IA, US
Anthony James LoBianco - Irvine CA, US
Hardik Bhupendra Modi - Irvine CA, US
Hoang Mong Nguyen - Fountain Valley CA, US
Matthew Thomas Ozalas - Novato CA, US
Sandra Louise Petty-Weeks - Newport Beach CA, US
Matthew Sean Read - Rancho Santa Margarita CA, US
Jens Albrecht Riege - Ojai CA, US
David Steven Ripley - Marion IA, US
Hongxiao Shao - Thousand Oaks CA, US
Hong Shen - Palo Alto CA, US
Weimin Sun - Santa Rosa Valley CA, US
Hsiang-Chih Sun - Thousand Oaks CA, US
Patrick Lawrence Welch - Campbell CA, US
Guohao Zhang - Nanjing, CN

International Classification:

H03F 1/02
H03F 3/21
H03F 3/19

Abstract:

A power amplifier module includes a power amplifier including a GaAs bipolar transistor having a collector, a base abutting the collector, and an emitter, the collector having a doping concentration of at least about 3×10cmat a junction with the base, the collector also having at least a first grading in which doping concentration increases away from the base; and an RF transmission line driven by the power amplifier, the RF transmission line including a conductive layer and finish plating on the conductive layer, the finish plating including a gold layer, a palladium layer proximate the gold layer, and a diffusion barrier layer proximate the palladium layer, the diffusion barrier layer including nickel and having a thickness that is less than about the skin depth of nickel at 0.9 GHz. Other embodiments of the module are provided along with related methods and components thereof.

US Patent:

20150326182, Nov 12, 2015

Filed:

Apr 14, 2015

Appl. No.:

14/686585

Inventors:

- Woburn MA, US
Yifan Guo - Irvine CA, US
Dinhphuoc Vu Hoang - Anaheim CA, US
Mehran Janani - Oak Park CA, US
Tin Myint Ko - Newbury Park CA, US
Philip John Lehtola - Cedar Rapids IA, US
Anthony James LoBianco - Irvine CA, US
Hardik Bhupendra Modi - Irvine CA, US
Hoang Mong Nguyen - Fountain Valley CA, US
Matthew Thomas Ozalas - Novato CA, US
Sandra Louise Petty-Weeks - Newport Beach CA, US
Matthew Sean Read - Rancho Santa Margarita CA, US
Jens Albrecht Riege - Ojai CA, US
David Steven Ripley - Marion IA, US
Hongxiao Shao - Thousand Oaks CA, US
Hong Shen - Palo Alto CA, US
Weimin Sun - Santa Rosa Valley CA, US
Hsiang-Chih Sun - Thousand Oaks CA, US
Patrick Lawrence Welch - Campbell CA, US
Guohao Zhang - Nanjing, CN

International Classification:

H03F 1/02
H03F 3/21
H03F 3/19

Abstract:

A power amplifier module includes a power amplifier including a GaAs bipolar transistor having a collector, a base abutting the collector, and an emitter, the collector having a doping concentration of at least about 3×10cmat a junction with the base, the collector also having at least a first grading in which doping concentration increases away from the base; and an RF transmission line driven by the power amplifier, the RF transmission line including a conductive layer and finish plating on the conductive layer, the finish plating including a gold layer, a palladium layer proximate the gold layer, and a diffusion barrier layer proximate the palladium layer, the diffusion barrier layer including nickel and having a thickness that is less than about the skin depth of nickel at 0.9 GHz. Other embodiments of the module are provided along with related methods and components thereof.

US Patent:

20150326183, Nov 12, 2015

Filed:

Apr 14, 2015

Appl. No.:

14/686666

Inventors:

- Woburn MA, US
Yifan Guo - Irvine CA, US
Dinhphuoc Vu Hoang - Anaheim CA, US
Mehran Janani - Oak Park CA, US
Tin Myint Ko - Newbury Park CA, US
Philip John Lehtola - Cedar Rapids IA, US
Anthony James LoBianco - Irvine CA, US
Hardik Bhupendra Modi - Irvine CA, US
Hoang Mong Nguyen - Fountain Valley CA, US
Matthew Thomas Ozalas - Novato CA, US
Sandra Louise Petty-Weeks - Newport Beach CA, US
Matthew Sean Read - Rancho Santa Margarita CA, US
Jens Albrecht Riege - Ojai CA, US
David Steven Ripley - Marion IA, US
Hongxiao Shao - Thousand Oaks CA, US
Hong Shen - Palo Alto CA, US
Weimin Sun - Santa Rosa Valley CA, US
Hsiang-Chih Sun - Thousand Oaks CA, US
Patrick Lawrence Welch - Campbell CA, US
Guohao Zhang - Nanjing, CN

International Classification:

H03F 1/02
H03F 3/21
H03F 3/19

Abstract:

One aspect of this disclosure is a power amplifier module that includes a power amplifier die including a power amplifier configured to amplify a radio frequency (RF) signal, the power amplifier including a heterojunction bipolar transistor (HBT) and a p-type field effect transistor (PFET), the PFET including a semiconductor segment that includes substantially the same material as a layer of a collector of the HBT, the semiconductor segment corresponding to a channel of the PFET; a load line electrically connected to an output of the power amplifier and configured to provide impedance matching at a fundamental frequency of the RF signal; and a harmonic termination circuit electrically connected to the output of the power amplifier and configured to terminate at a phase corresponding to a harmonic frequency of the RF signal. Other embodiments of the module are provided along with related methods and components thereof.