Jingrong Cui - Foster City CA, US Ruofei Zhang - Foster City CA, US Hong Shen - San Francisco CA, US Ji Yu Chu - Fremont CA, US Fang-Jie Zhang - San Jose CA, US Marcel Koenig - Burlingame CA, US Steven Huy Do - San Jose CA, US Xiaoyuan Li - Los Altos CA, US Chung Chen Wei - Foster City CA, US Peng Cho Tang - Moraga CA, US
The present invention relates to 4-arylindolinones, as well as pharmaceutical compositions thereof, capable of modulating protein kinase signal transduction in order to regulate, modulate and/or inhibit abnormal cell proliferation. The present invention also relates to methods for treating protein kinase related disorders.
Jingrong Cui - Foster City CA, US Ruofei Zhang - Foster City CA, US Hong Shen - San Francisco CA, US Ji Yu Chu - Fremont CA, US Fang-Jie Zhang - San Jose CA, US Marcel Koenig - Burlingame CA, US Steven Do - San Jose CA, US Xiaoyuan Li - Los Altos CA, US Chung Wei - Foster City CA, US Peng Tang - Moraga CA, US
Assignee:
Sugen, Inc.
International Classification:
A61K031/404 C 07D 4 3/02 C 07D 4 3/14
US Classification:
514/414000, 548/465000
Abstract:
The present invention relates to 4-arylindolinones, as well as pharmaceutical compositions thereof, capable of modulating protein kinase signal transduction in order to regulate, modulate and/or inhibit abnormal cell proliferation. The present invention also relates to methods for treating protein kinase related disorders.
Power Amplifier Modules Including Semiconductor Resistor And Tantalum Nitride Terminated Through Wafer Via
- Irvine CA, US Hongxiao Shao - Thousand Oaks CA, US Tin Myint Ko - Newbury Park CA, US Matthew Thomas Ozalas - Novato CA, US Hong Shen - Palo Alto CA, US Mehran Janani - Oak Park CA, US Jens Albrecht Riege - Ojai CA, US Hsiang-Chih Sun - Thousand Oaks CA, US David Steven Ripley - Cedar Rapids IA, US Philip John Lehtola - Cedar Rapids IA, US
One aspect of this disclosure is a power amplifier module that includes a power amplifier, a semiconductor resistor, a tantalum nitride terminated through wafer via, and a conductive layer electrically connected to the power amplifier. The semiconductor resistor can include a resistive layer that includes a same material as a layer of a bipolar transistor of the power amplifier. A portion of the conductive layer can be in the tantalum nitride terminated through wafer via. The conductive layer and the power amplifier can be on opposing sides of a semiconductor substrate. Other embodiments of the module are provided along with related methods and components thereof.
An integrated device package is disclosed. The integrated device package can include an antenna structure and an integrated device die electrically coupled to the antenna structure. The antenna structure can be formed with a system board or separated from the system board. When the antenna structure is formed with the system board, the integrated device package can include a redistribution layer having conductive routing traces such that the integrated device die is disposed between the system board and the redistribution layer, and the integrated device die is electrically coupled to the antenna structure at least partially through one or more of the conductive routing traces of the redistribution layer. When the antenna structure is separated from the system board, the integrated device die can be positioned between the antenna structure and the system board, and the integrated device die can be electrically coupled to the antenna structure at least partially through one or more of conductive routing traces of the system board and conductive wire of an interconnect structure between the system board and the antenna structure.
Device Packaging Using A Recyclable Carrier Substrate
According to various aspects and embodiments, a method for forming a packaged electronic device is provided. In accordance with one embodiment, the method comprises depositing a layer of temporary adhesive material on at least a portion of a surface of a first substrate having a coefficient of thermal expansion, depositing a layer of dielectric material on at least a portion of the layer of temporary adhesive material, forming at least one seal ring on at least a portion of the layer of dielectric material, providing a second substrate having a coefficient of thermal expansion that is substantially the same as the coefficient of thermal expansion of the first substrate, the second substrate having at least one bonding structure attached to a surface of the second substrate, and aligning the at least one seal ring to the at least one bonding structure and bonding the first substrate to the second substrate.
A device and method of forming the device that includes cavities formed in a substrate of a substrate device, the substrate device also including conductive vias formed in the substrate. Chip devices, wafers, and other substrate devices can be mounted to the substrate device. Encapsulation layers and materials may be formed over the substrate device in order to fill the cavities.
Contact Structures With Porous Networks For Solder Connections, And Methods Of Fabricating Same
- San Jose CA, US Rajesh Katkar - Milpitas CA, US Hong Shen - Palo Alto CA, US Cyprian Emeka Uzoh - San Jose CA, US
Assignee:
Invensas Corporation - San Jose CA
International Classification:
H05K 3/40 H01L 23/00 H05K 1/11 H05K 3/34
Abstract:
A contact pad includes a solder-wettable porous network () which wicks the molten solder () and thus restricts the lateral spread of the solder, thus preventing solder bridging between adjacent contact pads.
Wafer Level Chip Scale Filter Packaging Using Semiconductor Wafers With Through Wafer Vias
A method of fabricating an electronics package includes forming a cavity in a first surface of a semiconductor substrate, forming one or more passive devices on the semiconductor substrate, forming a microelectromechanical device on a piezoelectric substrate, and bonding the semiconductor substrate to the piezoelectric substrate with the microelectromechanical device disposed within the cavity.
Name / Title
Company / Classification
Phones & Addresses
Hong Shen Director
COASE CHINA SOCIETY
2172 W Enfield Way, Chandler, AZ 85286
Hong Shen Principal
Shanghai Ding Sheng Restaurant Eating Place
686 Barber Ln, Milpitas, CA 95035
Hong Shen Director, President, Secretary, Treasurer
Sh Southpoint Corp
Hong Shen
Hong Shen MD Colon Care · Internist
1111 NE 99 Ave, Portland, OR 97220 5039632707
Hong Shen Gastroenterology
The Oregon Clinic P C Medical Doctor's Office
847 NE 19 Ave, Portland, OR 97232 975 SE Sandy Blvd, Portland, OR 97214 5032360775
Dr. Shen graduated from the University of Texas Medical School at San Antonio in 1998. He works in Longview, TX and specializes in Family Medicine. Dr. Shen is affiliated with Good Shepherd Medical Center and Longview Regional Medical Center.
Dr. Shen graduated from the University of Western Australia in Perth. He later completed his internship and residency at Fremantle Hospital in Fremantle, Australia. Dr. Shen finished his internal medicine residency and gastroenterology fellowship at Indiana University Medical Center. He has been awarded the Travel Award for managing a Hepatitis B workshop and was the Acting Chief for the
Dr. Shen graduated from the Suzhou Med Coll, Suzhou City, Jiangsu, China in 1984. She works in Cleveland, OH and specializes in Pain Management. Dr. Shen is affiliated with Cleveland Clinic and Lutheran Hospital.
The Oregon Clinic Gastroenterology
1111 NE 99Th Ave, Portland, OR 97220 Indiana Gastroenterology Inc
550 University Blvd, Indianapolis, IN 46202 The Oregon Clinic Gastroenterology
10330 SE 32Nd Ave, Portland, OR 97222
Isbn (Books And Publications)
PDCAT 2005: 5-8 December 2005, Dalian, China Proceedings
Parallel And Distributed Computing:Applications And Technologies: 5th International Conference, Pdcat 2004, Singapore, December 8-10, 2004, Proceedings