Hung Quoc Doan

US Patent:

6794219, Sep 21, 2004

Filed:

Jul 28, 2003

Appl. No.:

10/628184

Inventors:

Eric G. Stevens - Webster NY
Hung Q. Doan - Rochester NY

Assignee:

Eastman Kodak Company - Rochester NY

International Classification:

H01L 2100

US Classification:

438 75, 438 76, 438433, 438524, 438724

Abstract:

A method for creating a lateral overflow drain, anti-blooming structure in a charge-coupled device, the method includes the steps of providing a substrate of a first conductivity type; providing a layer of silicon dioxide on the substrate; providing a layer of silicon nitride on the silicon dioxide layer; providing a first masking layer on the silicon nitride layer and having an opening in the first masking layer of a dimension which substantially equals a dimension of a subsequently implanted channel stop of the first conductivity type; etching away the exposed silicon nitride within the opening in the first masking layer; implanting ions of the first conductivity type through the first masking layer and into the substrate for creating the channel stop and removing the first masking layer; growing the silicon dioxide layer so that the channel stop is spanned by a thickest field silicon dioxide layer in the etched away portion; patterning a second masking layer having an opening adjacent the channel stop with a dimension substantially equal to a dimension of a subsequently implanted lateral overflow drain of a second conductivity type; etching away the exposed silicon nitride within the opening in the second masking layer; implanting the second conductivity type for forming the lateral overflow drain and removing any remaining masking layer; and growing the silicon dioxide layer so that a thicker silicon dioxide forms spanning the lateral overflow drain and the thickest silicon dioxide layer forms spanning the channel stop.

US Patent:

8018016, Sep 13, 2011

Filed:

Jun 26, 2009

Appl. No.:

12/492460

Inventors:

John P. McCarten - Penfield NY, US
Cristian A. Tivarus - Rochester NY, US
Joseph R. Summa - Hilton NY, US
Eric G. Stevens - Webster NY, US
Hung Q. Doan - Rochester NY, US
Robert M. Guidash - Rochester NY, US

Assignee:

OmniVision Technologies, Inc. - Santa Clara CA

International Classification:

H01L 31/101

US Classification:

257447

Abstract:

A back-illuminated image sensor includes a sensor layer of a first conductivity type having a frontside and a backside opposite the frontside. An insulating layer is disposed over the backside. A circuit layer is formed adjacent to the frontside such that the sensor layer is positioned between the circuit layer and the insulating layer. One or more frontside regions of a second conductivity type are formed in at least a portion of the frontside of the sensor layer. A backside region of the second conductivity type is formed in the backside of the sensor layer. A plurality of frontside photodetectors of the first conductivity type is disposed in the sensor layer. A distinct plurality of backside photodetectors of the first conductivity type separate from the plurality of frontside photodetectors is formed in the sensor layer contiguous to portions of the backside region of the second conductivity type.

US Patent:

8048711, Nov 1, 2011

Filed:

Nov 9, 2010

Appl. No.:

12/942507

Inventors:

Hung Q. Doan - Rochester NY, US
Eric G. Stevens - Webster NY, US

Assignee:

Omnivision Technologies, Inc. - Santa Clara CA

International Classification:

H01L 31/18

US Classification:

438 73, 257E33076

Abstract:

An image sensor having an imaging area that includes a substrate layer and a plurality of pixels formed therein. Multiple pixels each include a photodetector formed in the substrate layer. Isolation layers are formed in the substrate layer by performing a series of implants of one or more dopants of a first conductivity type into the substrate layer. Each isolation layer implant is performed with a different energy than the other isolation layer implants in the series and each implant implants the one or more dopants into the entire imaging area. The photodetectors are formed in the substrate layer by performing a series of implants of one or more dopants of a second conductivity type into each pixel in the substrate layer. Each photodetector implant is performed with a different energy than the other photodetector implants in the series.

US Patent:

8076746, Dec 13, 2011

Filed:

Jun 26, 2009

Appl. No.:

12/459121

Inventors:

John P. McCarten - Penfield NY, US
Cristian A. Tivarus - Rochester NY, US
Joseph R. Summa - Hilton NY, US
Eric G. Stevens - Webster NY, US
Hung Q. Doan - Rochester NY, US
Robert M. Guidash - Rochester NY, US

Assignee:

OmniVision Technologies, Inc. - Santa Clara CA

International Classification:

H01L 27/146

US Classification:

257447, 257E27132

Abstract:

A back-illuminated image sensor includes a sensor layer of a first conductivity type having a frontside and a backside opposite the frontside. One or more frontside regions of a second conductivity type are formed in at least a portion of the frontside of the sensor layer. A backside region of the second conductivity type is formed in the backside of the sensor layer. A plurality of frontside photodetectors of the first conductivity type is disposed in the sensor layer. A distinct plurality of backside photodetectors of the first conductivity type separate from the plurality of frontside photodetectors are formed in the sensor layer contiguous to portions of the region of the second conductivity type. A voltage terminal is disposed on the frontside of the sensor layer. One or more connecting regions of the second conductivity type are disposed in respective portions of the sensor layer between the voltage terminal and the backside region for electrically connecting the voltage terminal to the backside region.

US Patent:

8101450, Jan 24, 2012

Filed:

Dec 13, 2010

Appl. No.:

12/966238

Inventors:

Hung Q. Doan - Rochester NY, US
Eric G. Stevens - Webster NY, US
Robert M. Guidash - Rochester NY, US

Assignee:

OmniVision Technologies, Inc. - Santa Clara CA

International Classification:

H01L 21/00
H01L 21/8238
H01L 21/176

US Classification:

438 57, 438218, 438424

Abstract:

Shallow trench isolation regions are disposed in an n-type silicon semiconductor layer laterally adjacent to a collection region of a photodetector and laterally adjacent to a charge-to-voltage conversion region. The shallow trench isolation regions each include a trench disposed in the silicon semiconductor layer and a first dielectric structure disposed along an interior bottom and sidewalls of each trench. A second dielectric structure is disposed over the pinning layer. The dielectric structures include a silicon nitride layer disposed over an oxide layer. An n-type isolation layer is disposed along only a portion of the exterior bottom of the trench and the exterior sidewall of the trench immediately adjacent to the photodetector. The n-type isolation layer is not disposed along the remaining portion of the bottom or the opposing exterior sidewall of the trench.

US Patent:

8329499, Dec 11, 2012

Filed:

Oct 30, 2009

Appl. No.:

12/609296

Inventors:

Edmund K. Banghart - Pittsford NY, US
Eric G. Stevens - Webster NY, US
Hung Q. Doan - Rochester NY, US

Assignee:

Truesense Imaging, Inc. - Rochester NY

International Classification:

H01L 21/426
H01L 31/14

US Classification:

438 75, 438 60, 438526, 438527, 257E27139, 257E27145, 257E27162

Abstract:

A lateral overflow drain and a channel stop are fabricated using a double mask process. Each lateral overflow drain is formed within a respective channel stop. Due to the use of two mask layers, one edge of each lateral overflow drain is aligned, or substantially aligned, with an edge of a respective channel stop.

US Patent:

8378398, Feb 19, 2013

Filed:

Dec 13, 2010

Appl. No.:

12/966224

Inventors:

Hung Q. Doan - Rochester NY, US
Eric G. Stevens - Webster NY, US
Robert M. Guidash - Rochester NY, US

Assignee:

OmniVision Technologies, Inc. - Santa Clara CA

International Classification:

H01L 31/062
H01L 31/113

US Classification:

257292, 257E27133

Abstract:

Shallow trench isolation regions are disposed in an n-type silicon semiconductor layer laterally adjacent to a collection region of a photodetector and laterally adjacent to a charge-to-voltage conversion region. The shallow trench isolation regions each include a trench disposed in the silicon semiconductor layer and a first dielectric structure disposed along an interior bottom and sidewalls of each trench. A second dielectric structure is disposed over the pinning layer. The dielectric structures include a silicon nitride layer disposed over an oxide layer. An n-type isolation layer is disposed along only a portion of the exterior bottom of the trench and the exterior sidewall of the trench immediately adjacent to the photodetector. The n-type isolation layer is not disposed along the remaining portion of the bottom or the opposing exterior sidewall of the trench.

US Patent:

20080057612, Mar 6, 2008

Filed:

Aug 17, 2007

Appl. No.:

11/840299

Inventors:

Hung Q. Doan - Rochester NY, US
Eric G. Stevens - Webster NY, US

International Classification:

H01L 21/76
H01L 21/00

US Classification:

438 57, 438421, 257E21001, 257E2154

Abstract:

A method for fabricating corner implants in the shallow trench isolation regions of an image sensor includes the steps of forming a photoresist layer on a first hard mask layer overlying an etch-stop layer on a semiconductor substrate. The photoresist mask is patterned to create an opening and the portion of the first hard mask layer exposed in the opening is etched down to the etch-stop layer. A first dopant is implanted into the semiconductor substrate through the exposed etch-stop layer. The photoresist mask is removed and a second hard mask layer is formed on the remaining structure and etched to create sidewall spacers along the side edges of the first hard mask layer. The etch stop layer and the semiconductor substrate positioned between the sidewall spacers are etched to create a trench and a second dopant implanted into the side and bottom walls of the trench.