James Donnan Culbertson

US Patent:

52850676, Feb 8, 1994

Filed:

Mar 5, 1992

Appl. No.:

7/846633

Inventors:

James C. Culbertson - Alexandria VA
Harvey S. Newman - Alexandria VA
Jeffrey M. Pond - Alexandria VA
Stuart A. Wolf - Bowie MD
Ulrich Strom - Hyattsville MD

Assignee:

The United States of America as represented by the Secretary of the Navy - Washington DC

International Classification:

H01L 3900

US Classification:

2503362

Abstract:

Highly sensitive infrared detectors can be made from superconducting micrrip transmission lines, having a single ground plane, a dielectric substrate on the ground plane, and a thin film path of superconducting oxide on the substrate. These microstrip transmission lines can be fabricated into resonant or non-resonant structures. The detectors operate by detecting changes in a microwave signal transmitted through the microstrip, measures in the amplitude, frequency or time domains. An embodiment of this invention is an asymmetric ring interferometer, with or without a metal segment in the shorter leg of the interferometer. Another embodiment of this invention is a meander path transmission line, which, in certain configurations, may be used as a single element array with very high resolution in the direction parallel to the meander lines.

US Patent:

20210080419, Mar 18, 2021

Filed:

Sep 25, 2020

Appl. No.:

17/032658

Inventors:

- Arlington VA, US
F. Keith Perkins - Alexandria VA, US
James C. Culbertson - Alexandria VA, US
Aubrey T. Hanbicki - Washington DC, US
Paul M. Campbell - Alexandria VA, US

Assignee:

The Government of the United States of America, as Represented by the Secretary of the Navy - Arlington VA

International Classification:

G01N 27/26
G01N 27/12
G01N 21/77
C01B 19/04
C01G 33/00
C01G 35/00
C01G 39/06
C01G 41/00
C07C 211/05
C07C 211/07
G01N 21/65

Abstract:

Optical and electronic detection of chemicals, and particularly strong electron-donors, by 2H to 1T phase-based transition metal dichalcogenide (TMD) films, detection apparatus incorporating the TMD films, methods for forming the detection apparatus, and detection systems and methods based on the TMD films are provided. The detection apparatus includes a 2H phase TMD film that transitions to the 1T phase under exposure to strong electron donors. After exposure, the phase state can be determined to assess whether all or a portion of the TMD has undergone a transition from the 2H phase to the 1T phase. Following detection, TMD films in the 1T phase can be converted back to the 2H phase, resulting in a reusable chemical sensor that is selective for strong electron donors.

US Patent:

20180024085, Jan 25, 2018

Filed:

Jul 18, 2017

Appl. No.:

15/652491

Inventors:

- Arlington VA, US
F. Keith Perkins - Alexandria VA, US
James C. Culbertson - Alexandria VA, US
Aubrey T. Hanbicki - Washington DC, US
Paul M. Campbell - Alexandria VA, US

Assignee:

The Government of the United States of America, as Represented by the Secretary of the Navy - Arlington VA

International Classification:

G01N 27/26
C07C 211/05
C01G 35/00
C01G 39/06
C01G 41/00
C01G 33/00
C07C 211/07
C01B 19/04

Abstract:

Optical and electronic detection of chemicals, and particularly strong electron-donors, by 2H to 1T phase-based transition metal dichalcogenide (TMD) films, detection apparatus incorporating the TMD films, methods for forming the detection apparatus, and detection systems and methods based on the TMD films are provided. The detection apparatus includes a 2H phase TMD film that transitions to the 1T phase under exposure to strong electron donors. After exposure, the phase state can be determined to assess whether all or a portion of the TMD has undergone a transition from the 2H phase to the 1T phase. Following detection, TMD films in the 1T phase can be converted back to the 2H phase, resulting in a reusable chemical sensor that is selective for strong electron donors.

US Patent:

20170299544, Oct 19, 2017

Filed:

Apr 4, 2017

Appl. No.:

15/479014

Inventors:

- Arlington VA, US
F. Keith Perkins - Alexandria VA, US
James C. Culbertson - Alexandria VA, US
Aubrey T. Hanbicki - Washington DC, US
Paul M. Campbell - Alexandria VA, US

Assignee:

The Government of the United States of America, as represented by the Secretary of the Navy - Arlington VA

International Classification:

G01N 27/414
H01L 29/24
G03F 7/40
H01L 29/66
G03F 1/20

Abstract:

A method of making a low dimensional material chemical vapor sensor comprising providing a monolayer of a transition metal dichalcogenide, applying the monolayer to a substrate, applying a PMMA film, defining trenches, and placing the device in a n-butyl lithium (nbl) bath. A low dimensional material chemical vapor sensor comprising a monolayer of a transition metal dichalcogenide, the monolayer applied to a substrate, a region or regions of the transition metal dichalcogenide that have been treated with n-butyl lithium, the region or regions of the transition metal dichalcogenide that have been treated with n-butyl lithium have transitioned from a semiconducting to metallic phase, metal contacts on the region or regions of the transition metal dichalcogenide that have been treated with the n-butyl lithium.