James B Heath

US Patent:

6459095, Oct 1, 2002

Filed:

Mar 29, 1999

Appl. No.:

09/282048

Inventors:

James R. Heath - Santa Monica CA
R. Stanley Williams - Mountain View CA
Philip J. Kuekes - Menlo Park CA

Assignee:

Hewlett-Packard Company - Palo Alto CA

International Classification:

H01L 2906

US Classification:

257 14

Abstract:

A route to the fabrication of electronic devices is provided, in which the devices consist of two crossed wires sandwiching an electrically addressable molecular species. The approach is extremely simple and inexpensive to implement, and scales from wire dimensions of several micrometers down to nanometer-scale dimensions. The device of the present invention can be used to produce crossbar switch arrays, logic devices, memory devices, and communication and signal routing devices. The present invention enables construction of molecular electronic devices on a length scale than can range from micrometers to nanometers via a straightforward and inexpensive chemical assembly procedure. The device is either partially or completely chemically assembled, and the key to the scaling is that the location of the devices on the substrate are defined once the devices have been assembled, not prior to assembly.

US Patent:

6756296, Jun 29, 2004

Filed:

Dec 11, 2001

Appl. No.:

10/015063

Inventors:

James R. Heath - Santa Monica CA
Charles P. Collier - San Marino CA
Yi Luo - Los Angeles CA
Erica DeIonno - Los Angeles CA
Patricia A. Beck - Palo Alto CA

Assignee:

California Institute of Technology - Pasadena CA

International Classification:

H01L 214763

US Classification:

438622

Abstract:

Methods for making electronic devices where a molecular monolayer or multilayer is sandwiched between top and bottom electrodes at electrode intersections. The molecular layer has an electrical characteristic such as bistable switching. A layer of electrically conductive material is used to protect the molecular layer during formation of the top electrode pattern. The electrically conductive material remains sandwiched between the top and bottom electrodes at the electrode intersections in the final electronic device.

US Patent:

6846682, Jan 25, 2005

Filed:

Jul 17, 2001

Appl. No.:

09/907314

Inventors:

James R. Heath - Santa Monica CA, US
R. Stanley Williams - Mountain View CA, US
Philip J. Kuekes - Menlo Park CA, US

Assignee:

Hewlett-Packard Development Company, L.P. - Houston TX

International Classification:

H01L 2100

US Classification:

438 2

Abstract:

A route to the fabrication of electronic devices is provided, in which the devices consist of two crossed wires sandwiching an electrically addressable molecular species. The approach is extremely simple and inexpensive to implement, and scales from wire dimensions of several micrometers down to nanometer-scale dimensions. The device of the present invention can be used to produce crossbar switch arrays, logic devices, memory devices, and communication and signal routing devices. The present invention enables construction of molecular electronic devices on a length scale than can range from micrometers to nanometers via a straightforward and inexpensive chemical assembly procedure. The device is either partially or completely chemically assembled, and the key to the scaling is that the location of the devices on the substrate are defined once the devices have been assembled, not prior to assembly.

US Patent:

6903366, Jun 7, 2005

Filed:

Oct 31, 2003

Appl. No.:

10/699172

Inventors:

James R. Heath - Santa Monica CA, US
R. Stanley Williams - Mountain View CA, US
Philip J. Kuekes - Menlo Park CA, US

Assignee:

Hewlett-Packard Development Company, L.P. - Houston TX

International Classification:

H01L029/06

US Classification:

257 14, 257 40

Abstract:

A route to the fabrication of electronic devices is provided, in which the devices consist of two crossed wires sandwiching an electrically addressable molecular species. The approach is extremely simple and inexpensive to implement, and scales from wire dimensions of several micrometers down to nanometer-scale dimensions. The device of the present invention can be used to produce crossbar switch arrays, logic devices, memory devices, and communication and signal routing devices. The present invention enables construction of molecular electronic devices on a length scale than can range from micrometers to nanometers via a straightforward and inexpensive chemical assembly procedure. The device is either partially or completely chemically assembled, and the key to the scaling is that the location of the devices on the substrate are defined once the devices have been assembled, not prior to assembly.

US Patent:

20120101268, Apr 26, 2012

Filed:

Nov 1, 2011

Appl. No.:

13/286418

Inventors:

Arkadij M. Elizarov - Woodland Hills CA, US
Hartmuth C. Kolb - Playa Del Rey CA, US
R. Michael Van Dam - Los Angeles CA, US
James R. Heath - South Pasadena CA, US

Assignee:

SIEMENS MEDICAL SOLUTIONS USA, INC. - Malvern PA

International Classification:

C07H 21/00
C08B 37/00
G21C 1/00

US Classification:

536 2532, 422159, 536124

Abstract:

Described herein are automated, integrated microfluidic device comprising a chemical reaction chip comprising for performing chemical reaction, a microscale column integrated with the chip and configured for liquid flow from the column to at least one flow channel, and wherein the fluid flow into the column is controlled by on-chip valves; and comprising at least two on-chip valves for controlling fluid flow in the microfluidic device.

US Patent:

61596205, Dec 12, 2000

Filed:

Mar 31, 1998

Appl. No.:

9/052235

Inventors:

James R. Heath - Santa Monica CA
Daniel V. Leff - Palo Alto CA
Gil Markovich - Tel Aviv, IL

Assignee:

The Regents of the University of California - Oakland CA

International Classification:

B32B 1508

US Classification:

428615

Abstract:

A single-electron solid state electronic device is characterized by organically functionalized nanometer size metal and metal alloy nanocrystal active elements. The electronic behavior of the device is distinguished by single electron charging phenomena, displaying characteristic Coulomb Blockade and Coulomb Staircase signatures.

US Patent:

61038687, Aug 15, 2000

Filed:

Jun 18, 1998

Appl. No.:

9/091389

Inventors:

James R. Heath - Santa Monica CA
Daniel V. Leff - Palo Alto CA

Assignee:

The Regents of the University of California - Oakland CA

International Classification:

C08F 612
C08J 314
B32B 100

US Classification:

528482

Abstract:

Organically functionalized metal nanoparticles are produced by mixing a metal precursor with an organic surface passivant and reacting the resulting mixture with a reducing agent to generate free metal while binding the passivant to the surface of the free metal to produce organically functionalized metal particles.

US Patent:

61986550, Mar 6, 2001

Filed:

Dec 10, 1999

Appl. No.:

9/459246

Inventors:

James Richard Heath - Santa Monica CA
Charles Patrick Collier - Los Angeles CA
Gunter Mattersteig - Battaune bei Eilenburg, DE
Francisco M. Raymo - Los Angeles CA
James Fraser Stoddart - Santa Monica CA
Eric Wong - Los Angeles CA

Assignee:

The Regents of the University of California - Oakland CA

International Classification:

G11C 1300

US Classification:

365151

Abstract:

Volatile and non-volatile solid state molecular switching devices which are electrically addressable and may be used in memory cells, routing circuits, inverters and field programmable devices which may or may not be designed to exhibit diode behavior. The molecular switching devices include certain [2] catenanes as bistable molecules which are sandwiched between two switch terminals. The switches are extremely small and have dimensions which range from several microns down to a few nanometers.