James D Key

US Patent:

20040040506, Mar 4, 2004

Filed:

Aug 27, 2002

Appl. No.:

10/228542

Inventors:

Herbert Ovshinsky - Oak Park MI, US
Kevin Hoffman - Sterling Heights MI, US
Joachim Doehler - Santa Barbara CA, US
Mark Lycette - Berkley MI, US
James Key - Waterford MI, US

International Classification:

C23C016/00

US Classification:

118/718000

Abstract:

A high throughput apparatus for depositing one or more thin film layers on a plurality of continuous web substrates. The apparatus includes a pay-out unit for dispensing a plurality of webs, a deposition unit that receives the plurality of webs and deposits a series of one or more thin film layers thereon, and a take-up unit that receives and stores the plurality of webs upon deposition of the thin film layers. High throughput is achieved through the simultaneous deposition of thin films on a plurality of web substrates. In a preferred embodiment, deposition occurs through plasma enhanced chemical vapor deposition in which a plasma region is formed between a cathode in the deposition unit and the plurality of webs. Deposition precursors are introduced into the plasma region and are transformed to reactive species that form a thin film layer on the plurality of web substrates. In one embodiment, the deposition unit includes a series of deposition chambers, each of which is operated at conditions that lead to the formation of a thin film layer with an intended composition and thickness. By appropriately selecting deposition precursors and conditions for individual deposition chambers within a series, the instant invention permits the formation of multilayer structures in which the layers vary in composition and/or thickness. In a preferred embodiment, multilayer structures including amorphous, polycrystalline and/or microcrystalline silicon are formed in which the layers may be n-type, p-type or intrinsic. In a preferred embodiment, the plurality of webs is co-planar and parallel to a cathode in the deposition chamber. In another preferred embodiment, a cathode is interposed between two sets of co-planar webs and deposition occurs on both sets of webs simultaneously as plasma regions extend from two surfaces of the cathode. Also disclosed is a web supporter having flexible displacement means for web transport. The supporter facilitates transport by compensating for disturbances in web motion while preventing damage to deposited films.

US Patent:

20060278163, Dec 14, 2006

Filed:

Mar 16, 2006

Appl. No.:

11/376997

Inventors:

Stanford Ovshinsky - Bloomfield Hills MI, US
Herbert Ovshinsky - Oak Park MI, US
Masat Izu - Bloomfield Hills MI, US
Joachim Doehler - White Lake MI, US
Kevin Hoffman - Sterling Heights MI, US
James Key - Waterford MI, US
Mark Lycette - Berkley MI, US

International Classification:

C23C 16/00

US Classification:

118718000

Abstract:

A apparatus for depositing one or more thin film layers on one or more continuous web or discrete substrates. The apparatus includes a pay-out unit for dispensing one or a plurality of webs, a deposition unit that deposits a series of one or more thin film layers thereon, and a take-up unit that receives and stores the webs following deposition. In a preferred embodiment, deposition occurs through plasma enhanced chemical vapor deposition in which a plasma region is formed between a cathode in the deposition unit and one or more vertically-oriented webs. The instant deposition apparatus includes a support system for guiding and stabilizing the transport of one or more webs or substrates through the deposition chambers. The support system includes a magnetic guidance assembly and an edge-stabilizing assembly that operate to inhibit perturbations of the motion of a web or substrate in directions other than the direction of transport through the apparatus.