James M Kikkawa
age ~56
from Swarthmore, PA
- Also known as:
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- James Makoto Kikkawa
- Jay M Kikkawa
- Jas M Kikkawa
- James Kirkawa
- Phone and address:
- 110 Guernsey Rd, Swarthmore, PA 19081
James Kikkawa Phones & Addresses
- 110 Guernsey Rd, Swarthmore, PA 19081
- Long Beach Township, NJ
- Santa Ana, CA
- 121 Pueblo St, Santa Barbara, CA 93105
- Philadelphia, PA
Us Patents
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Patterning Structures Using Deformable Substrates
view source -
US Patent:8557341, Oct 15, 2013
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Filed:Apr 23, 2008
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Appl. No.:12/596777
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Inventors:Shu Yang - Blue Bell PA, US
Ying Zhang - Corning NY, US
Randall Kamien - Philadelphia PA, US
James Makoto Kikkawa - Swarthmore PA, US
Elisabetta Matsumoto - Kensington CA, US
Dinesh Chandra - Amherst MA, US -
Assignee:The Trustees Of The University Of Pennsylvania - Philadelphia PA
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International Classification:B05D 3/00
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US Classification:427271, 427256, 427261, 427264, 427275
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Abstract:Aspects of the present invention describe soft imprint lithography methods capable of preparing structural features on surfaces. Disclosed methods include surmounting a deformable substrate, having an original form, with a composition, wherein the deformable substrate is capable of achieving at least one predetermined deformed state; predictably deforming said deformable substrate from its original form to the at least one predetermined deformed state; and transferring at least a portion of the composition surmounting the deformed substrate to a receiving substrate.
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Integrable Ferromagnets For High Density Storage
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US Patent:63072416, Oct 23, 2001
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Filed:Jun 7, 1995
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Appl. No.:8/475235
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Inventors:David D. Awschalom - Santa Barbara CA
Pierre M. Petroff - Santa Barbara CA
Jing Shi - Goleta CA
James M. Kikkawa - Santa Barbara CA -
Assignee:The Regents of the Unversity of California - Oakland CA
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International Classification:H01L 2982
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US Classification:257421
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Abstract:Submicron ferromagnets, of selected size and spacing, are introduced into semiconductor by means of ion implantation and subsequent heat treatments. The resulting semiconductor contains ferromagnets at high density and which exhibit Curie temperatures exceeding room temperature. The semiconductor retains its intrinsic physical properties, such as optical and transport properties, after incorporation of the ferromagnetic nanostructures.
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