James Kwang Kim

US Patent:

6995389, Feb 7, 2006

Filed:

Jun 18, 2003

Appl. No.:

10/465775

Inventors:

James C. Kim - San Jose CA, US
Nathan F. Gardner - Mountain View CA, US
Michael R. Krames - Mountain View CA, US
Yu-Chen Shen - Sunnyvale CA, US
Troy A. Trottier - San Jose CA, US

Assignee:

Lumileds Lighting, U.S., LLC - San Jose CA

International Classification:

H01L 29/06
H01L 31/0328
H01L 31/0336
H01L 33/00

US Classification:

257 13, 257 14, 257 94, 257 96

Abstract:

Heterostructure designs are disclosed that may increase the number of charge carriers available in the quantum well layers of the active region of III-nitride light emitting devices such as light emitting diodes. In a first embodiment, a reservoir layer is included with a barrier layer and quantum well layer in the active region of a light emitting device. In some embodiments, the reservoir layer is thicker than the barrier layer and quantum well layer, and has a greater indium composition than the barrier layer and a smaller indium composition than the quantum well layer. In some embodiments, the reservoir layer is graded. In a second embodiment, the active region of a light emitting device is a superlattice of alternating quantum well layers and barrier layers. In some embodiments, the barrier layers are thin such that charge carriers can tunnel between quantum well layers through a barrier layer.

US Patent:

7285799, Oct 23, 2007

Filed:

Apr 21, 2004

Appl. No.:

10/829141

Inventors:

James C. Kim - San Jose CA, US
Yu-Chen Shen - Sunnyvale CA, US

Assignee:

Philip Lumileds Lighting Company, LLC - San Jose CA

International Classification:

H01L 27/15
H01L 29/24

US Classification:

257 79, 257101, 257627, 257628, 257E33006, 257E33003, 372 45, 372 43, 372 75

Abstract:

A semiconductor light emitting device includes a planar light emitting layer with a wurtzite crystal structure having a axis roughly parallel to the plane of the layer, referred to as an in-plane light emitting layer. The in-plane light emitting layer may include, for example, a {11 0} or {10 0} InGaN light emitting layer. In some embodiments, the in-plane light emitting layer has a thickness greater than 50 Å.

US Patent:

7535031, May 19, 2009

Filed:

Sep 13, 2005

Appl. No.:

11/226184

Inventors:

James C. Kim - San Jose CA, US
Stephen A. Stockman - Morgan Hill CA, US

Assignee:

Philips Lumiled Lighting, Co. LLC - San Jose CA

International Classification:

H01L 27/15

US Classification:

257101, 257E2712

Abstract:

A semiconductor light emitting device includes an active region, an n-type region, and a p-type region comprising a portion that extends into the active region. The active region may include multiple quantum wells separated by barrier layers, and the p-type extension penetrates at least one of the quantum well layers. The extensions of the p-type region into the active region may provide uniform filling of carriers in the individual quantum wells of the active region by providing direct current paths into individual quantum wells. Such uniform filling may improve the operating efficiency at high current density by reducing the carrier density in the quantum wells closest to the bulk p-type region, thereby reducing the number of carriers lost to nonradiative recombination.

US Patent:

7610176, Oct 27, 2009

Filed:

Jun 6, 2006

Appl. No.:

11/422399

Inventors:

Jerome Tu - Saratoga CA, US
James Kim - San Jose CA, US
Bennett Chan - Saratoga CA, US
Jason Jianxiong Shi - Pleasanton CA, US

Assignee:

Palm, Inc. - Sunnyvale CA

International Classification:

G06F 17/40
G06F 19/00

US Classification:

702187, 702 1, 702 33, 702 34, 702127, 702182

Abstract:

A computing device is provided on which device analysis information is generated. The device analysis information may be generated from the use of diagnostic and monitoring applications and code. The device analysis information is handled by an application/central processor and then stored on a removeable storage device.

US Patent:

7629532, Dec 8, 2009

Filed:

Dec 29, 2006

Appl. No.:

11/648059

Inventors:

James C. Kim - San Jose CA, US
Sungsoo Yi - Sunnyvale CA, US

Assignee:

Sundiode, Inc. - Sunnyvale CA

International Classification:

H01L 31/00
H01L 21/00

US Classification:

136255, 136249, 136252, 257 14, 257 98, 438 72

Abstract:

A method and apparatus for solar cell having graded energy wells is provided. The active region of the solar cell comprises nanostructures. The nanostructures are formed from a material that comprises a III-V compound semiconductor and an element that alters the band gap of the III-V compound semiconductor. For example, the III-V compound semiconductor could be gallium nitride (GaN). As an example, the “band gap altering element” could be indium (In). The concentration of the indium in the active region is non-uniform such that the active region has a number of energy wells, separated by barriers. The energy wells may be “graded”, by which it is meant that the energy wells have a different band gap from one another, generally increasing or decreasing from one well to another monotonically.

US Patent:

7664928, Feb 16, 2010

Filed:

Jan 19, 2005

Appl. No.:

11/039757

Inventors:

Nupur B. Andrews - Sunnyvale CA, US
James Kim - San Jose CA, US
Himanshu A. Sanghavi - Fremont CA, US
William A. Huffman - Los Gatos CA, US
Eileen Margaret Peters Long - San Jose CA, US

Assignee:

Tensilica, Inc. - Santa Clara CA

International Classification:

G06F 15/00

US Classification:

712 14, 712 29, 712 38

Abstract:

A technique that improves both processor performance and associated data bandwidth through user-defined interfaces that can be added to a configurable and extensible microprocessor core. These interfaces can be used to communicate status or control information and to achieve synchronization between the processor and any external device including other processors. These interfaces can also be used to achieve data transfer at the rate of one data element per interface in every clock cycle. This technique makes it possible to design multiprocessor SOC systems with high-speed data transfer between processors without using the memory subsystem. Such a system and design methodology offers a complete shift from the standard bus-based architecture and allows designers to treat processors more like true computational units, so that designers can more effectively utilize programmable solutions rather than design dedicated hardware. This can have dramatic effects not only in the performance and bandwidth achieved by designs, but also in the time to market and reuse of such designs.

US Patent:

7808011, Oct 5, 2010

Filed:

Mar 19, 2004

Appl. No.:

10/805424

Inventors:

James C. Kim - San Jose CA, US
John E. Epler - Milpitas CA, US
Nathan F. Gardner - Sunnyvale CA, US
Michael R. Krames - Los Altos CA, US

Assignee:

Koninklijke Philips Electronics N.V. - Eindhoven
Philips Lumileds Lights Co., LLC - San Jose CA

International Classification:

H01L 33/00

US Classification:

257 98, 257 88, 257 89, 257 99

Abstract:

A semiconductor light emitting device includes an in-plane active region that emits linearly-polarized light. An in-plane active region may include, for example, a {11 0} or {10 0} InGaN light emitting layer. In some embodiments, a polarizer oriented to pass light of a polarization of a majority of light emitted by the active region serves as a contact. In some embodiments, two active regions emitting the same or different colored light are separated by a polarizer oriented to pass light of a polarization of a majority of light emitted by the bottom active region, and to reflect light of a polarization of a majority of light emitted by the top active region. In some embodiments, a polarizer reflects light scattered by a wavelength converting layer.

US Patent:

8026117, Sep 27, 2011

Filed:

Apr 9, 2009

Appl. No.:

12/421048

Inventors:

James C. Kim - San Jose CA, US
Stephen A. Stockman - Morgan Hill CA, US

Assignee:

Philips Lumides Lighting Company LLC - San Jose CA

International Classification:

H01L 21/00

US Classification:

438 45, 257E33001

Abstract:

A semiconductor light emitting device includes an active region, an n-type region, and a p-type region comprising a portion that extends into the active region. The active region may include multiple quantum wells separated by barrier layers, and the p-type extension penetrates at least one of the quantum well layers. The extensions of the p-type region into the active region may provide uniform filling of carriers in the individual quantum wells of the active region by providing direct current paths into individual quantum wells. Such uniform filling may improve the operating efficiency at high current density by reducing the carrier density in the quantum wells closest to the bulk p-type region, thereby reducing the number of carriers lost to nonradiative recombination.

Address:

9702 Vis Crst Ave, Las Vegas, NV 89148

VIN:

2T1KR32E98C719449

Make:

TOYOTA

Model:

MATRIX

Year:

2008