James G Kimball

US Patent:

6849512, Feb 1, 2005

Filed:

Oct 30, 2002

Appl. No.:

10/283630

Inventors:

Wai Lo - Lake Oswego OR, US
James P. Kimball - Troutdale OR, US
Verne C. Hornback - Camas WA, US

Assignee:

LSI Logic Corporation - Milpitas CA

International Classification:

H01L 21336

US Classification:

438287, 438458, 438770

Abstract:

A method of making a thin gate dielectric includes implanting a barrier substance into a region of a silicon substrate. A capacitance-increasing material is implanted into the silicon substrate. An outside layer of the silicon substrate is oxidized to form a first silicon oxide layer. The silicon substrate is oxidized between the first silicon oxide layer and the region.

US Patent:

6864141, Mar 8, 2005

Filed:

Jun 3, 2003

Appl. No.:

10/453118

Inventors:

Wai Lo - Lake Oswego OR, US
James P. Kimball - Troutdale OR, US
Verne C. Hornback - Camas WA, US

Assignee:

LSI Logic Corporation - Milpitas CA

International Classification:

H01L021/283
H01L021/31

US Classification:

438287, 438761, 438763, 438765

Abstract:

A method of making a thin gate dielectric includes providing a metal silicate on a silicon substrate. Nitrogen is implanted into the metal silicate.

US Patent:

20180096849, Apr 5, 2018

Filed:

Sep 19, 2017

Appl. No.:

15/708447

Inventors:

- Phoenix AZ, US
James KIMBALL - Boring OR, US
Gordon M. GRIVNA - Mesa AZ, US

Assignee:

SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC - Phoenix AZ

International Classification:

H01L 21/28
H01L 21/265
H01L 21/02
H01L 21/306
H01L 29/423
H01L 29/40
H01L 29/788
H01L 29/66

Abstract:

A process of forming electronic device can include providing a substrate having a first portion and a second portion; introducing a nitrogen-containing species into the second portion of the substrate; and exposing the substrate to an oxidizing ambient, wherein a thicker oxide is grown from the first portion as compared to the second portion. In an embodiment, the process can include removing the first portion while the second portion of the substrate that includes the nitrogen-containing species remains. In another embodiment, the process can be used to form different thicknesses of an oxide layer at different portions along a sidewall of a trench. The process may be used in other applications where different thicknesses of oxide layers are to be formed during the same oxidation cycle, such as forming a tunnel dielectric layer and a gate dielectric layer for a floating gate memory cell.

Address:

13323 1 Ave NE, Seattle, WA 98125

Phone:

2068502036

VIN:

JTEBU11F58K014414

Make:

TOYOTA

Model:

FJ CRUISER

Year:

2008