James H Logsdon

US Patent:

6793389, Sep 21, 2004

Filed:

Oct 18, 2002

Appl. No.:

10/065447

Inventors:

Abhijeet V. Chavan - Carmel IN
James H. Logsdon - Kokomo IN
Dan W. Chilcott - Greentown IN
Han-Sheng S. Lee - Bloomfield Hills MI
David K. Lambert - Sterling Heights MI
Timothy A. Vas - Kokomo IN

Assignee:

Delphi Technologies, Inc. - Troy MI

International Classification:

G01K 702

US Classification:

374179, 374163, 374183, 374121, 136213

Abstract:

An integrated sensor comprising a thermopile transducer and signal processing circuitry that are combined on a single semiconductor substrate, such that the transducer output signal is sampled in close vicinity by the processing circuitry. The sensor comprises a frame formed of a semiconductor material that is not heavily doped, and with which a diaphragm is supported. The diaphragm has a first surface for receiving thermal (e. g. , infrared) radiation, and comprises multiple layers that include a sensing layer containing at least a pair of interlaced thermopiles. Each thermopile comprises a sequence of thermocouples, each thermocouple comprising dissimilar electrically-resistive materials that define hot junctions located on the diaphragm and cold junctions located on the frame. The signal processing circuitry is located on the frame and electrically interconnected with the thermopiles. The thermopiles are interlaced so that the output of one of the thermopiles increases with increasing temperature difference between the hot and cold junctions thereof, while the output of the second thermopile decreases with increasing temperature difference between its hot and cold junctions.

US Patent:

6828172, Dec 7, 2004

Filed:

Oct 18, 2002

Appl. No.:

10/065448

Inventors:

Abhijeet V. Chavan - Carmel IN
James H. Logsdon - Kokomo IN
Dan W. Chilcott - Greentown IN
John C. Christenson - Kokomo IN
Robert K. Speck - Kokomo IN

Assignee:

Delphi Technologies, Inc. - Troy MI

International Classification:

H01I 2100

US Classification:

438 50, 438 53, 438756

Abstract:

A process using integrated sensor technology in which a micromachined sensing element and signal processing circuit are combined on a single semiconductor substrate to form, for example, an infrared sensor. The process is based on modifying a CMOS process to produce an improved layered micromachined member, such as a diaphragm, after the circuit fabrication process is completed. The process generally entails forming a circuit device on a substrate by processing steps that include forming multiple dielectric layers and at least one conductive layer on the substrate. The dielectric layers comprise an oxide layer on a surface of the substrate and at least two dielectric layers that are in tension, with the conductive layer being located between the two dielectric layers. The surface of the substrate is then dry etched to form a cavity and delineate the diaphragm and a frame surrounding the diaphragm. The dry etching step terminates at the oxide layer, such that the diaphragm comprises the dielectric layers and conductive layer.

US Patent:

6828560, Dec 7, 2004

Filed:

Jan 31, 2002

Appl. No.:

10/059401

Inventors:

David K. Lambert - Sterling Heights MI
Han-Sheng Lee - Bloomfield Hills MI
Dan W. Chilcott - Greentown IN
Hamid R. Borzabadi - Noblesville IN
Qin Jiang - Kokomo IN
James H. Logsdon - Kokomo IN

Assignee:

Delphi Technologies, Inc. - Troy MI

International Classification:

G01J 508

US Classification:

250353

Abstract:

An infrared sensor including an absorber for absorbing incident infrared power to produce a signal representing the temperature of a target object, a frame supporting a membrane which carries the absorber, the frame including a plurality of reflecting surfaces disposed about the circumference of an opening over which the membrane spans for reflecting incident infrared power toward the absorber. By concentrating incident infrared power through reflection, the temperature difference between the absorber and the surrounding frame is increased, thereby producing an increased electrical output from the sensor.

US Patent:

6844606, Jan 18, 2005

Filed:

Oct 18, 2002

Appl. No.:

10/065446

Inventors:

James H. Logsdon - Kokomo IN, US
Abhijeet V. Chavan - Carmel IN, US
Hamid R. Borzabadi - Noblesville IN, US

Assignee:

Delphi Technologies, Inc. - Troy MI

International Classification:

H01L 2302

US Classification:

257434, 257432, 257680, 257703, 257704, 2503381, 2503384

Abstract:

An optical sensor package capable of being surface mounted, and in a form that enables multiple packages to be fabricated simultaneously and then array tested in a wafer stack prior to singulation. The package comprises a chip carrier, a device chip electrically and mechanically connected to a first surface of the chip carrier with solder connections, and a capping chip secured to the chip carrier to hermetically enclose the device chip. The device chip has an optical sensing element on a surface thereof, while the capping chip has means for enabling radiation to pass therethrough to the device chip. The chip carrier includes conductive vias that are electrically connected to the solder connections of the device chip and extend through the chip carrier to bond pads on a second surface of the chip carrier, enabling the package to be surface mounted with solder connections to a suitable substrate.

US Patent:

7118991, Oct 10, 2006

Filed:

Apr 1, 2004

Appl. No.:

10/708936

Inventors:

Troy A. Chase - Kokomo IN, US
James H. Logsdon - Kokomo IN, US
James Kingery - Logansport IN, US

Assignee:

Delphi Technologies, Inc. - Troy MI

International Classification:

H01L 21/30
H01L 21/46
H01L 21/302
H01L 21/461

US Classification:

438456, 438689

Abstract:

A method of processing a wafer, and particularly a cap wafer configured for mating with a device wafer in the production of a die package. Masking layers are deposited on oxide layers present on opposite surfaces of the wafer, after which the masking layers are etched to expose regions of the underlying oxide layers. Thereafter, an oxide mask is formed on the exposed regions of the oxide layers, but is prevented from forming on other regions of the oxide layers masked by the masking layers. The masking layers are then removed and the underlying regions of the oxide layers and the wafer are etched to simultaneously produce through-holes and recesses in the wafer. The oxide mask is then removed to allow mating of the cap wafer with a device wafer.

US Patent:

7119326, Oct 10, 2006

Filed:

Dec 17, 2004

Appl. No.:

10/905151

Inventors:

James H. Logsdon - Kokomo IN, US
Abhijeet V. Chavan - Maple Grove MN, US
Michael P. Donahue - Kokomo IN, US
Deron K. Slaughter - Kokomo IN, US

Assignee:

Delphi Technologies, Inc. - Troy MI

International Classification:

G01D 18/00
G12B 13/00

US Classification:

2502521

Abstract:

A method and apparatus for evaluating the functionality and sensitivity of an infrared sensor to infrared radiation. The method and apparatus are adapted for testing an infrared sensor having a diaphragm containing a heating element and a transducer that generates an output responsive to temperature. The method entails placing the infrared sensor in a controlled environment, and then exposing the diaphragm of the sensor to different levels of thermal radiation so as to obtain outputs of the transducer at different output levels. In the absence of exposure of the diaphragm to thermal radiation, flowing current through the heating element at different input levels so that the output of the transducer returns to the different output levels obtained using thermal radiation, the input difference between the input levels can be computed and used to assess the functionality and the sensitivity of the sensor.

US Patent:

7180064, Feb 20, 2007

Filed:

Jun 29, 2004

Appl. No.:

10/710260

Inventors:

Han-Sheng Lee - Bloomfield Hills MI, US
Dan W. Chilcott - Greentown IN, US
James H. Logsdon - Kokomo IN, US

Assignee:

Delphi Technologies, Inc. - Troy MI

International Classification:

G01J 5/00

US Classification:

2503381, 2503384, 257434, 257448, 257687

Abstract:

An optical sensor package with a substrate that supports a membrane carrying an optical sensor and through which radiation passes to impinge the sensor. The substrate has a first surface in which a cavity is defined, a second surface opposite the first surface, and a wall between the cavity and the second surface. The optical sensor is supported on the membrane, which is bonded to the substrate and spans the cavity in the substrate. A window is defined at the second surface of the substrate for enabling infrared radiation to pass through the wall of the substrate to the optical sensor.

US Patent:

20050016576, Jan 27, 2005

Filed:

Jun 29, 2004

Appl. No.:

10/710250

Inventors:

Qin Jiang - Kokomo IN, US
Han Lee - Bloomfield Hills MI, US
James Logsdon - Kokomo IN, US
Dan Chilcott - Greentown IN, US
David Lambert - Sterling Heights MI, US
Shih-Chia Chang - Bloomfield Hills MI, US

Assignee:

DELPHI TECHNOLOGIES, INC. - Kokomo IN

International Classification:

H01L035/00
H01L035/30
H01L037/00
H01L035/28

US Classification:

136224000

Abstract:

A thermocouple structure capable of providing a more compact thermopile-based thermal sensor. The thermocouple structure has a stacked configuration that includes a plurality of first conductors on a surface, a dielectric layer on each of the first conductors, and a plurality of second conductors on the dielectric layer and formed of a different material than the first conductors. Each first conductor has first and second ends, and each second conductor has a first end overlying and contacting the first end of one of the first conductors, and a second end overlying but separated from the second end of the first conductor by the dielectric layer. A plurality of third conductors electrically interconnect one of the second ends of the second conductors with one of the second ends of the first conductors. Each third conductors is thicker than the second conductors to promote the robustness of the connection.