James F Macdougall

US Patent:

6365266, Apr 2, 2002

Filed:

Mar 3, 2000

Appl. No.:

09/518955

Inventors:

James Edward MacDougall - New Tripoli PA
Kevin Ray Heier - Macungie PA
Scott Jeffrey Weigel - Allentown PA

Assignee:

Air Products and Chemicals, Inc. - Allentown PA

International Classification:

B32B 300

US Classification:

4283044, 4283126, 4283148, 42725511, 4273722, 4273762, 4274192

Abstract:

A process provides a ceramic film, such as a mesoporous silica film, on a substrate, such as a silicon wafer. The process includes preparing a film-forming fluid containing a ceramic precursor, a catalyst, a surfactant and a solvent, depositing the film-forming fluid on the substrate, and removing the solvent from the film-forming fluid on the substrate to produce the ceramic film on the substrate. The ceramic film has a dielectric constant below 2. 3, a halide content of less than 1 ppm and a metal content of less than 500 ppm, making it useful for current and future microelectronics applications.

US Patent:

6592980, Jul 15, 2003

Filed:

Nov 13, 2000

Appl. No.:

09/711573

Inventors:

James Edward MacDougall - New Tripoli PA
Kevin Ray Heier - Macungie PA
Scott Jeffrey Weigel - Allentown PA
Timothy W. Weidman - Sunnyvale CA
Alexandros T. Demos - Fremont CA
Nikolaos Bekiaris - San Jose CA
Yunfeng Lu - San Jose CA
Michael P. Nault - San Jose CA
Robert Parkash Mandal - Saratoga CA

Assignee:

Air Products and Chemicals, Inc. - Allentown PA

International Classification:

B32B 326

US Classification:

4283044, 4283122, 42725511, 4273722, 4273762, 4274192, 106 1413, 106 1441

Abstract:

A process provides a ceramic film, such as a mesoporous silica film, on a substrate, such as a silicon wafer. The process includes preparing a film-forming fluid containing a ceramic precursor, a catalyst, a surfactant and a solvent, depositing the film-forming fluid on the substrate, and removing the solvent from the film-forming fluid on the substrate to produce the ceramic film on the substrate. The ceramic film has a dielectric constant below 2. 3, a halide content of less than 1 ppm and a metal content of less than 500 ppm, making it useful for current and future microelectronics applications.

US Patent:

6818289, Nov 16, 2004

Filed:

Oct 2, 2002

Appl. No.:

10/263254

Inventors:

James Edward MacDougall - New Tripoli PA
Kevin Ray Heier - Macungie PA
Scott Jeffrey Weigel - Allentown PA
Timothy W. Weidman - Sunnyvale CA
Alexandros T. Demos - Fremont CA
Nikolaos Bekiaris - San Jose CA
Yunfeng Lu - San Jose CA
Michael P Nault - San Jose CA
Robert Parkash Mandal - Saratoga CA

Assignee:

Air Products and Chemicals, Inc. - Allentown PA

International Classification:

B32B 326

US Classification:

4283044, 4283122, 42725511, 4273722, 4273762, 4274192, 106 1413, 106 1441

Abstract:

A process provides a ceramic film, such as a mesoporous silica film, on a substrate, such as a silicon wafer. The process includes preparing a film-forming fluid containing a ceramic precursor, a catalyst, a surfactant and a solvent, depositing the film-forming fluid on the substrate, and removing the solvent from the film-forming fluid on the substrate to produce the ceramic film on the substrate. The ceramic film has a dielectric constant below 2. 3, a halide content of less than 1 ppm and a metal content of less than 500 ppm, making it useful for current and future microelectronics applications.

US Patent:

6942918, Sep 13, 2005

Filed:

Jan 14, 2002

Appl. No.:

10/046434

Inventors:

James Edward MacDougall - New Tripoli PA, US
Kevin Ray Heier - Macungie PA, US
Scott Jeffrey Weigel - Allentown PA, US

Assignee:

Air Products and Chemicals, Inc. - Allentown PA

International Classification:

B32B003/26

US Classification:

4283044, 4283126, 4283155

Abstract:

A process provides a ceramic film, such as a mesoporous silica film, on a substrate, such as a silicon wafer. The process includes preparing a film-forming fluid containing a ceramic precursor, a catalyst, a surfactant and a solvent, depositing the film-forming fluid on the substrate, and removing the solvent from the film-forming fluid on the substrate to produce the ceramic film on the substrate. The ceramic film has a dielectric constant below 2. 3, a halide content of less than 1 ppm and a metal content of less than 500 ppm, making it useful for current and future microelectronics applications.

US Patent:

7122880, Oct 17, 2006

Filed:

May 20, 2003

Appl. No.:

10/638942

Inventors:

Brian Keith Peterson - Fogelsville PA, US
John Francis Kirner - Orefield PA, US
Scott Jeffrey Weigel - Allentown PA, US
James Edward MacDougall - New Tripoli PA, US
Lisa Deis - Pittsburgh PA, US
Thomas Albert Braymer - Allentown PA, US
Keith Douglas Campbell - Slatington PA, US
Martin Devenney - Mountain View CA, US
C. Eric Ramberg - San Jose CA, US
Konstantinos Chondroudis - Sunnyvale CA, US
Keith Cendak - Millbrae CA, US

Assignee:

Air Products and Chemicals, Inc. - Allentown PA

International Classification:

H01L 21/31
H01L 21/469

US Classification:

257632, 257E21261, 257E21273, 438780, 438781

Abstract:

Low dielectric materials and films comprising same have been identified for improved performance when used as performance materials, for example, in interlevel dielectrics integrated circuits as well as methods for making same. In one aspect of the present invention, the performance of the dielectric material may be improved by controlling the weight percentage of ethylene oxide groups in the at least one porogen.

US Patent:

7186613, Mar 6, 2007

Filed:

Oct 13, 2004

Appl. No.:

10/964499

Inventors:

John Francis Kirner - Orefield PA, US
James Edward MacDougall - New Tripoli PA, US
Brian Keith Peterson - Fogelsville PA, US
Scott Jeffrey Weigel - Allentown PA, US
Thomas Alan Deis - Vista CA, US
Martin Devenney - Mountain View CA, US
C. Eric Ramberg - San Jose CA, US
Konstantinos Chondroudis - Sunnyvale CA, US
Keith Cendak - Millbrae CA, US

Assignee:

Air Products And Chemicals, Inc. - Allentown PA

International Classification:

H01L 21/8242
H01L 29/94

US Classification:

438240, 257310

Abstract:

Low dielectric materials and films comprising same have been identified for improved performance when used as interlevel dielectrics in integrated circuits as well as methods for making same. These materials are characterized as having a dielectric constant (κ) a dielectric constant of about 3. 7 or less; a normalized wall elastic modulus (E′), derived in part from the dielectric constant of the material, of about 15 GPa or greater; and a metal impurity level of about 500 ppm or less. Low dielectric materials are also disclosed having a dielectric constant of less than about 1. 95 and a normalized wall elastic modulus (E′), derived in part from the dielectric constant of the material, of greater than about 26 GPa.

US Patent:

7294585, Nov 13, 2007

Filed:

Jul 11, 2006

Appl. No.:

11/484049

Inventors:

Brian Keith Peterson - Fogelsville PA, US
John Francis Kirner - Orefield PA, US
Scott Jeffrey Weigel - Allentown PA, US
James Edward MacDougall - New Tripoli PA, US
Lisa Deis, legal representative - Pittsburgh PA, US
Thomas Albert Braymer - Allentown PA, US
Keith Douglas Campbell - Slatington PA, US
Martin Devenney - Mountain View CA, US
C. Eric Ramberg - San Jose CA, US
Konstantinos Chondroudis - Sunnyvale CA, US
Keith Cendak - Millbrae CA, US

Assignee:

Air Products and Chemicals, Inc. - Allentown PA

International Classification:

H01L 21/31
H01L 21/469

US Classification:

438780, 438781, 438787, 257E21261, 257E21273

Abstract:

Low dielectric materials and films comprising same have been identified for improved performance when used as performance materials, for example, in interlevel dielectrics integrated circuits as well as methods for making same. In one aspect of the present invention, the performance of the dielectric material may be improved by controlling the weight percentage of ethylene oxide groups in the at least one porogen.

US Patent:

7307343, Dec 11, 2007

Filed:

May 30, 2002

Appl. No.:

10/158511

Inventors:

John Francis Kirner - Orefield PA, US
James Edward MacDougall - New Tripoli PA, US
Brian Keith Peterson - Fogelsville PA, US
Scott Jeffrey Weigel - Allentown PA, US
Thomas Alan Deis - Vista CA, US
Martin Devenney - Mountain View CA, US
C. Eric Ramberg - San Jose CA, US
Konstantinos Chondroudis - Sunnyvale CA, US
Keith Cendak - Millbrae CA, US

Assignee:

Air Products and Chemicals, Inc. - Allentown PA

International Classification:

H01L 23/48

US Classification:

257758, 257759, 257642, 257E23145, 257E21547, 4283122, 4283126

Abstract:

Low dielectric materials and films comprising same have been identified for improved performance when used as interlevel dielectrics in integrated circuits as well as methods for making same. These materials are characterized as having a dielectric constant (κ) a dielectric constant of about 3. 7 or less; a normalized wall elastic modulus (E′), derived in part from the dielectric constant of the material, of about 15 GPa or greater; and a metal impurity level of about 500 ppm or less. Low dielectric materials are also disclosed having a dielectric constant of less than about 1. 95 and a normalized wall elastic modulus (E′), derived in part from the dielectric constant of the material, of greater than about 26 GPa.