James P O'Donnell

US Patent:

40573923, Nov 8, 1977

Filed:

Mar 8, 1976

Appl. No.:

5/665118

Inventors:

James M. O'Donnell - Slatersville RI

Assignee:

Orgonics, Inc. - Slatersville RI

International Classification:

C05F 306

US Classification:

232591

Abstract:

An apparatus for and a process of treating sludge filter cake and the granular product thereof which comprises reducing the particle size and moisture content of the sludge cake, sterilizing the sludge cake by contacting the sludge cake with an N-methylol-urea solution, reacting the N-methylol-urea solution with the sludge cake at a pH of 3 to 5 while agitating the sludge particles to provide a granular-reaction product, and drying the product to provide a granular, high-nitrogen, odorless fertilizer or animal feed supplement product.

US Patent:

39764656, Aug 24, 1976

Filed:

Apr 17, 1975

Appl. No.:

5/568867

Inventors:

James M. O'Donnell - Woonsocket RI

Assignee:

Orgonics, Inc. - Slatersville RI

International Classification:

C05F 300

US Classification:

71 13

Abstract:

A process for the chemical treatment of organic waste materials contaminated with a pathogenic microorganism, such as raw sewage, sewage sludge and other organic waste products, and to the treated organic waste material so obtained, which process comprises: prereacting the organic waste material with a water-soluble methylol compound subject to condensation, such as a methylolurea compound, under alkaline pH conditions; and, thereafter, condensing the methylol compound by establishing an acid pH condition to form a solid waste product comprising a condensation polymer containing methylene bridges and a sterile solid waste material.

US Patent:

39429709, Mar 9, 1976

Filed:

May 23, 1974

Appl. No.:

5/472714

Inventors:

James M. O'Donnell - Slatersville RI

Assignee:

Orgonics, Inc. - Slatersville RI

International Classification:

C05F 300
C05C 900
C02C 300

US Classification:

71 12

Abstract:

An apparatus for and a process of treating sludge filter cake and the granular product thereof which comprises reducing the particle size and moisture content of the sludge cake, sterilizing the sludge cake by contacting the sludge cake with an N-methylol-urea solution, reacting the N-methylol-urea solution with the sludge cake at a pH of 3 to 5 while agitating the sludge particles to provide a granular-reaction product, and drying the product to provide a granular, high-nitrogen, odorless fertilizer or animal feed supplement product.

US Patent:

40813665, Mar 28, 1978

Filed:

Aug 18, 1976

Appl. No.:

5/715439

Inventors:

James M. O'Donnell - Woonsocket RI

Assignee:

Orgonics, Inc. - Slatersville RI

International Classification:

C05F 300

US Classification:

210 10

Abstract:

A process for the chemical treatment of organic waste materials contaminated with a pathogenic microorganism, such as raw sewage, sewage sludge and other organic waste products, and to the treated organic waste material so obtained, which process comprises: prereacting the organic waste material with a water-soluble methylol compound subject to condensation, such as a methylolurea compound, under alkaline pH conditions; and, thereafter, condensing the methylol compound by establishing an acid pH condition to form a solid waste product comprising a condensation polymer containing methylene bridges and a sterile solid waste material.

US Patent:

20230080212, Mar 16, 2023

Filed:

Sep 15, 2021

Appl. No.:

17/476165

Inventors:

- Santa Clara CA, US
James O'Donnell - Forest Grove OR, US
Shailesh Kumar Madisetti - Hillsboro OR, US

Assignee:

Intel Corporation - Santa Clara CA

International Classification:

H01L 29/786
H01L 29/66

Abstract:

A thin film transistor (TFT) structure. In an example, the TFT includes a gate electrode, a first layer comprising an oxide semiconductor material, and a second layer between the first layer and the gate electrode. The second layer is crystalline and is in contact with the first layer, and includes zirconium and oxygen. The TFT includes a first contact coupled to the first layer at a first location, and a second contact coupled to the first layer at a second location. In some cases, the second layer further includes hafnium. In some cases, the TFT includes a third layer between of the gate electrode and the second layer, the third layer comprising a metal and oxygen. The gate electrode may also include the metal. In some cases, hydrogen is present at an interface between the gate electrode and the second layer.