James Michael Peters

US Patent:

6597259, Jul 22, 2003

Filed:

Jan 11, 2001

Appl. No.:

09/758935

Inventors:

James Michael Peters - Frederick MD 21701

International Classification:

H01P 1213

US Classification:

333134, 333204, 333185

Abstract:

A laminate dielectric filter that has an asymmetrical band pass response is formed with a dielectric laminate structure that includes a first dielectric layer, a second dielectric layer and a third dielectric layer. A first resonator element and a second resonator element are interposed between the first and second dielectric layers and are arranged in a spaced apart relationship from one another. The first and second resonator elements each have a first end electrically connected to a circuit ground potential and a second end which is open circuited. Coupling structures are coupled to the first and second resonator elements to provide input/output ports for the filter. A third resonator element which has a first end electrically connected to a circuit ground potential and a second end which is open circuited is interposed between the second and third dielectric layers and is positioned to be disposed between the first and second resonators such that the first, second and third resonator elements are magnetically coupled to each other. A coupling element is provided that has a width and a position, spaced from said first ends of said first and second resonator elements, to form a coupled triplet having an asymmetrical filter response with all zeros of the response on only one side of the filter pass band.

US Patent:

6611183, Aug 26, 2003

Filed:

Oct 16, 2000

Appl. No.:

09/687309

Inventors:

James Michael Peters - Frederick MD 21701

International Classification:

H01P 1205

US Classification:

333206, 333203

Abstract:

A coupled filter section is formed with a two piece construction. The filter section includes a first portion formed as a first unitary piece which has relief areas therein which define a plurality of cavities, a corresponding plurality of resonators or resonator portions located within each of the of cavities, a plurality of channels allowing magnetic coupling between adjacent cavities, and a plurality of coupling stubs disposed within the channels. The second piece is affixed to the first portion to substantially enclose the relief areas of the first portion. Preferably, the second piece includes post sections which are coaxially aligned with the resonators. The coupled filter section can include coupled triplet and coupled quadruplet sections.

US Patent:

6885259, Apr 26, 2005

Filed:

Jul 22, 2003

Appl. No.:

10/623594

Inventors:

Byoung Hwa Lee - Kyungki-do, KR
Nam Chul Kim - Daejeon, KR
James Mike Peters - Frederick MD, US
Myung Pyo Jun - Kyungki-do, KR
Jeong Ho Yoon - Kyungki-do, KR
Ian Lee - Seoul, KR
Dong Seok Park - Seoul, KR
Sang Soo Park - Kyungki-do, KR

Assignee:

Samsung Electro-Mechanics Co., Ltd. - Kyungki-do

International Classification:

H01P001/213

US Classification:

333126, 333129, 333132, 333134

Abstract:

Disclosed is a matching circuit of a laminated duplexer connected to an antenna terminal while being connected between transmitting and receiving filters to match the transmitting and receiving filters with the antenna terminal, the matching circuit being configured to reduce the physical length of each conductor pattern thereof, thereby being capable of achieving an improved miniaturization thereof. The matching circuit includes a transmitting matching unit constituted by a conductor pattern electrically connected to an antenna electrode connected to the antenna terminal while being electrically connected to the transmitting filter, a first ground electrode vertically spaced apart from the conductor pattern, a receiving matching unit constituted by a conductor pattern electrically connected to the antenna electrode and the receiving filter, and a second ground electrode vertically spaced apart from the conductor pattern of the receiving matching unit. A laminated duplexer provided with the matching circuit is also disclosed. In accordance with the configuration of the matching circuit, it is possible to achieve a reduction in insertion loss, an improvement in the reflection characteristics of an associated antenna, and, thus, an improvement in bandpass characteristics.

US Patent:

56165404, Apr 1, 1997

Filed:

Dec 2, 1994

Appl. No.:

8/349060

Inventors:

Robert D. Lithgow - Schaumburg IL
James M. Peters - Evanston IL

Assignee:

Illinois Superconductor Corporation - Evanston IL

International Classification:

H01P 1201
H01P 700
H01B 1206

US Classification:

505210

Abstract:

A filter for processing electromagnetic signals has a housing with resonators located inside the cavity of that housing. The resonators, which may be made in part from superconducting material, have rounded exterior surfaces without corners to provide a more desirable coating surface and uniform electric field around the resonators. The filter housing may be composed of a plurality of housing cells, each containing a resonator. These cells can be removably attached to other cells so that resonators may be added to or removed from the filter as may be required for a particular application.

US Patent:

20200050785, Feb 13, 2020

Filed:

Aug 10, 2018

Appl. No.:

16/100924

Inventors:

- New York NY, US
David Pflum - Elmhurst IL, US
Timothy Dockter - Elgin IL, US
James W. Peters - West Chicago IL, US
John C. Pinkowski - Carol Stream IL, US

International Classification:

G06F 21/62
G06F 17/30

Abstract:

A method includes performing by a host system processor: receiving a record insert request for a database, the record insert request comprising a primary key value and a semi-unique key value, the database comprising a record structure comprising a first primary key field, a second primary key field, and a semi-unique key field, the first primary key field comprising a flag portion for which a first flag value is indicative of the first primary key field containing a primary key and a second flag value is indicative of the first primary key field containing an alternate primary key, generating an alternate primary key value based on the primary key value and the semi-unique key value, the alternate primary key value having a portion thereof corresponding to the flag portion of the first primary key field set to the second flag value, generating a record comprising the alternate primary key value in the first primary key field, the primary key value in the second primary key field, and the semi-unique key value in the semi-unique key field, and communicating the record to the database.

US Patent:

20180190643, Jul 5, 2018

Filed:

Mar 1, 2018

Appl. No.:

15/908903

Inventors:

- Chicago IL, US
James Allan Peters - Chicago IL, US
Steve Wilton Byatt - Chicago IL, US

Assignee:

LITTELFUSE, INC. - Chicago IL

International Classification:

H01L 27/02
H01L 29/06
H01L 29/66
H01L 29/861

Abstract:

In one embodiment, an overvoltage protection device may include a semiconductor substrate comprising an n-type body region. The overvoltage protection device may further include a first p-type region disposed in a first surface region of the semiconductor substrate, and forming a first P/N junction with the n-type body region, and a second p-type region disposed in a second surface region of the semiconductor substrate opposite the first surface, and forming a second P/N junction with the n-type body region, wherein the n-type body region, first p-type region, and second p-type region form a breakdown device having a breakdown voltage greater than 100V when an external voltage is applied between the first surface region and second surface region.

US Patent:

20160293591, Oct 6, 2016

Filed:

Apr 3, 2015

Appl. No.:

14/678005

Inventors:

- Chicago IL, US
James Allan Peters - Chicago IL, US
Steve Wilton Byatt - Chicago IL, US

Assignee:

LITTELFUSE, INC. - Chicago IL

International Classification:

H01L 27/02
H01L 29/66

Abstract:

In one embodiment, an overvoltage protection device may include a semiconductor substrate comprising an n-type body region. The overvoltage protection device may further include a first p-type region disposed in a first surface region of the semiconductor substrate, and forming a first P/N junction with the n-type body region, and a second p-type region disposed in a second surface region of the semiconductor substrate opposite the first surface, and forming a second P/N junction with the n-type body region, wherein the n-type body region, first p-type region, and second p-type region form a breakdown device having a breakdown voltage greater than 100 V when an external voltage is applied between the first surface region and second surface region.