James B Plummer
age ~41
from Brooklyn, NY
- Also known as:
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- Jamey Plummer
James Plummer Phones & Addresses
- Brooklyn, NY
- San Francisco, CA
- Charleston, SC
- Awendaw, SC
- Mount Pleasant, SC
- 1648 E 55Th St, Brooklyn, NY 11234 • 7186041058
Work
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Company:QED Group
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Address:3489 Eagle Ridge Court
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Phones:8003339904
Education
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Degree:Bachelor's degree or higher
Specialities
Buyer's Agent • Listing Agent
Us Patents
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Semiconductor Current-Switching Device Having Operational Enhancer And Method Therefor
view source -
US Patent:6448586, Sep 10, 2002
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Filed:Sep 21, 2000
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Appl. No.:09/666825
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Inventors:Farid Nemati - Stanford CA
James D. Plummer - Portola Valley CA -
Assignee:The Board of Trustees of the Leland Standford Junior University - Palo Alto CA
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International Classification:H01L 2974
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US Classification:257133, 257147, 257155, 365180
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Abstract:A novel capacitively coupled NDR device can be used to implement a variety of semiconductor circuits, including high-density SRAM cells and power thyristor structures. In one example embodiment, the NDR device is used as a thin vertical PNPN structure with capacitively-coupled gate-assisted turn-off and turn-on mechanisms. An SRAM based on this new device is comparable in cell area, standby current, architecture, speed, and fabrication process to a DRAM of the same capacity. In one embodiment, an NDR-based SRAM cell consists of only two elements, has an 8F footprint, can operate at high speeds and low voltages, has a good noise-margin, and is compatible in fabrication process with main-stream CMOS. This cell significantly reduces standby power consumption compared to other type of NDR-based SRAMs.
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Manufacture Of Semiconductor Capacitively-Coupled Ndr Device For Applications Such As High-Density High-Speed Memories And Power Switches
view source -
US Patent:6528356, Mar 4, 2003
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Filed:Mar 20, 2002
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Appl. No.:10/103240
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Inventors:Farid Nemati - Stanford CA
James D. Plummer - Portola Valley CA -
Assignee:The Board of Trustees of the Leland Stanford Junior University - Palo Alto CA
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International Classification:H01L 21332
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US Classification:438135
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Abstract:A novel capacitively coupled NDR device can be used to implement a variety of semiconductor circuits, including high-density SRAM cells and power thyristor structures. In one example embodiment, the NDR device is used as a thin vertical PNPN structure with capacitively-coupled gate-assisted turn-off and turn-on mechanisms. An SRAM based on this new device is comparable in cell area, standby current, architecture, speed, and fabrication process to a DRAM of the same capacity. In one embodiment, an NDR-based SRAM cell consists of only two elements, has an 8 F footprint, can operate at high speeds and low voltages, has a good noise-margin, and is compatible in fabrication process with main-stream CMOS. This cell significantly reduces standby power consumption compared to other types of NDR-based SRAMs.
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Semiconductor Capacitively-Coupled Ndr Device And Related Applications In High-Density High-Speed Memories And In Power Switches
view source -
US Patent:6727529, Apr 27, 2004
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Filed:Mar 20, 2002
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Appl. No.:10/103241
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Inventors:Farid Nemati - Stanford CA
James D. Plummer - Portola Valley CA -
Assignee:The Board of Trustees of the Leland Stanford Junior University - Palo Alto CA
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International Classification:H01L 2974
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US Classification:257133, 257147, 257155, 365180
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Abstract:A novel capacitively coupled NDR device can be used to implement a variety of semiconductor circuits, including high-density SRAM cells and power thyristor structures. In one example embodiment, the NDR device is used as a thin vertical PNPN structure with capacitively-coupled gate-assisted turn-off and turn-on mechanisms. An SRAM based on this new device is comparable in cell area, standby current, architecture, speed, and fabrication process to a DRAM of the same capacity. In one embodiment, an NDR-based SRAM cell consists of only two elements, has an 8 F footprint, can operate at high speeds and low voltages, has a good noise-margin, and is compatible in fabrication process with main-stream CMOS. This cell significantly reduces standby power consumption compared to other types of NDR-based SRAMs.
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Thyristor-Type Memory Device
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US Patent:6967358, Nov 22, 2005
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Filed:Feb 12, 2004
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Appl. No.:10/777453
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Inventors:Farid Nemati - Stanford CA, US
James D. Plummer - Portola Valley CA, US -
Assignee:The Board of Trustees of the Leland Stanford Junior University - Palo Alto CA
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International Classification:H01L029/423
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US Classification:257133, 257135
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Abstract:A thyristor device can be used to implement a variety of semiconductor memory circuits, including high-density memory-cell arrays and single cell circuits. In one example embodiment, the thyristor device includes doped regions of opposite polarity, and a first word line that is used to provide read and write access to the memory cell. A second word line is located adjacent to and separated by an insulative material from one of the doped regions of the thyristor device for write operations to the memory cell, for example, by enhancing the switching of the thyristor device from a high conductance state to a low conductance state and/or from the low conductance state to the high conductance. This type of memory circuit can be implemented to significantly reduce standby power consumption and access time.
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Thyristor-Based Semiconductor Device And Method Of Fabrication
view source -
US Patent:7195959, Mar 27, 2007
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Filed:Oct 4, 2004
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Appl. No.:10/958820
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Inventors:James D. Plummer - Portola Valley CA, US
Zachary K. Lee - Irvine CA, US
Kevin J. Yang - Santa Clara CA, US
Farid Nemati - Redwood City CA, US -
Assignee:T-Ram Semiconductor, Inc. - Milpitas CA
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International Classification:H01L 21/332
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US Classification:438133, 438139
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Abstract:A thyristor-based semiconductor memory device may comprise at least a region thereof, e. g. , a p-base region, having high ionization energy impurity, such as a dopant. This high ionization energy impurity within a base region may be operable to compensate for a gain-versus-temperature dependence of a constituent bipolar transistor of the thyristor element of a thyristor-based memory device. In particular embodiments, the high ionization energy impurity may include a donor and/or acceptor in silicon.
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Thyristor-Type Memory Device
view source -
US Patent:7365373, Apr 29, 2008
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Filed:Aug 18, 2005
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Appl. No.:11/206627
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Inventors:Farid Nemati - Stanford CA, US
James D. Plummer - Portola Valley CA, US -
Assignee:The Board of Trustees of the Leland Stanford Junior University - Palo Alto CA
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International Classification:H01L 29/423
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US Classification:257133, 257132, 257134
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Abstract:A thyristor device can be used to implement a variety of semiconductor memory circuits, including high-density memory-cell arrays and single cell circuits. In one example embodiment, the thyristor device includes doped regions of opposite polarity, and a first word line that is used to provide read and write access to the memory cell. A second word line is located adjacent to and separated by an insulative material from one of the doped regions of the thyristor device for write operations to the memory cell, for example, by enhancing the switching of the thyristor device from a high conductance state to a low conductance state and/or from the low conductance state to the high conductance. This type of memory circuit can be implemented to significantly reduce standby power consumption and access time.
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Crystalline-Type Device And Approach Therefor
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US Patent:7498243, Mar 3, 2009
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Filed:Mar 17, 2004
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Appl. No.:10/590223
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Inventors:Yaocheng Liu - Stanford CA, US
Michael D. Deal - Palo Alto CA, US
James D. Plummer - Portola Valley CA, US -
Assignee:The Board of Trustees of the Leland Stanford Junior University - Palo Alto CA
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International Classification:H01L 21/20
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US Classification:438479, 117 53
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Abstract:Single-crystalline growth is realized using a liquid-phase crystallization approach involving the inhibition of defects typically associated with liquid-phase crystalline growth of lattice mismatched materials. According to one example embodiment, a semiconductor device structure includes a substantially single-crystal region. A liquid-phase material is crystallized to form the single-crystal region using an approach involving defect inhibition for the promotion of single-crystalline growth. In some instances, this defect inhibition involves the reduction and/or elimination of defects using a relatively small physical opening via which a crystalline growth front propagates. In other instances, this defect inhibition involves causing a change in crystallization front direction relative to a crystallization seed location. The relatively small physical opening and/or the change in crystalline front direction may be implemented, for example, using a material that is relatively unreactive with the liquid-phase material to contain the crystalline growth.
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Crystalline-Type Device And Approach Therefor
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US Patent:7749872, Jul 6, 2010
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Filed:Feb 25, 2009
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Appl. No.:12/392261
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Inventors:James D. Plummer - Portola Valley CA, US
Peter B. Griffin - Woodside CA, US
Jia Feng - Palo Alto CA, US -
Assignee:The Board of Trustees of the Leland Stanford Junior University - Palo Alto CA
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International Classification:H01L 21/20
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US Classification:438479, 117 53
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Abstract:Single-crystalline growth is realized using a liquid-phase crystallization approach involving the inhibition of defects typically associated with liquid-phase crystalline growth of lattice mismatched materials. According to one example embodiment, a semiconductor device structure includes a substantially single-crystal region. A liquid-phase material, such as Ge or a semiconductor compound, is crystallized to form the single-crystal region using an approach involving defect inhibition for the promotion of single-crystalline growth. In some instances, this defect inhibition involves the reduction and/or elimination of defects using a relatively small physical opening via which a crystalline growth front propagates. In other instances, this defect inhibition involves causing a change in crystallization front direction relative to a crystallization seed location. The relatively small physical opening and/or the change in crystalline front direction may be implemented, for example, using a material that is substantially unreactive with the liquid-phase material to contain the crystalline growth.
Amazon
Survival Tactics 4-Box Set: Survival Living Basics, Survival Prepping Secrets, Prepping Food Secrets, Prepper First Aid Secrets
view sourceBOOKS INCLUDED:-------------------------Survival Living Basics: What You Need To Know To Survive When The Grid Goes Down And People Are Desperate-------------------------The wilderness and survival hacks in this short, easy to read guide may just save your life when a disaster strikes and no one is ...
Author
Chris M. Kendrick, James N. Plummer, Frank A. Moore, Colby S. Clark
Binding
Kindle Edition
Pages
189
ISBN #
9
Survival Prepping Secrets: What You Will Need To Barter When Paper Money Is Worthless PLUS How To Build The Perfect Bug Out Bag
view sourceDo you have the items you will need to use as currency when society breaks down, ATM's no longer work, credit cards are worthless, and paper money has no value?This practical SHTF survival guide will reveal the items you need to stash right now so you will be able to provide for your family when the...
Author
James N. Plummer
Binding
Kindle Edition
Pages
49
ISBN #
8
21 Months a Captive: Rachel Plummer and the Fort Parker Massacre (Annotated)
view sourceOn May 19, 1836, Fort Parker in Texas was overwhelmed by a band of Comanche Indians. Some residents were brutally murdered, others taken prisoner.Among those captured was eleven year old Cynthia Parker, who would remain with the Comanche for 24 years and give birth to famed Chief Quanah.Another capt...
Author
Rachel Plummer, James W. Parker
Binding
Kindle Edition
Pages
74
Publisher
BIG BYTE BOOKS
ISBN #
4
Silicon VLSI Technology: Fundamentals, Practice, and Modeling
view sourceUnique in approach, this book provides an integrated view of silicon technology--with an emphasis on modern computer simulation. It describes not only the manufacturing practice associated with the technologies used in silicon chip fabrication, but also the underlying scientific basis for those t...
Author
James D. Plummer, Michael Deal, Peter D. Griffin
Binding
Paperback
Pages
817
Publisher
Pearson
ISBN #
0130850373
EAN Code
9780130850379
ISBN #
1
Rachel Plummer narrativea stirring narrative of adventure, hardship and privation in the early days of Texas depicting struggles with the Indians and other adventures
view sourcePages 122 It is the reproduction of the old book published long back(1926) We try our level best to give you perfect book but some time, due to old books some imperfections like missing or damaged Pages left in the book. These are due to the original artefact or left at the time of scanning. We foun...
Author
D. Rachael Plummer James W. Parker
Binding
Hardcover
Pages
122
Publisher
Isha Books
ISBN #
9332877831
EAN Code
9789332877832
ISBN #
5
Name / Title
Company / Classification
Phones & Addresses
SARANDBAY MARKETING, INC
President
Qed Capital Group, Inc
125 S California Ave, Palo Alto, CA 94306
President
QED LEGAL VALUATIONS, INC
125 California Ave STE 200, Palo Alto, CA 94306
President
Q.E.D. RESEARCH INC
125 California Ave STE 200, Palo Alto, CA 94306
President
QED CAPITAL, INC
125 California Ave #200, Palo Alto, CA 94306
Real Estate Brokers
James Plummer, Reno CA
view sourceSpecialties:
Buyer's Agent
Listing Agent
Listing Agent
Work:
QED Group
3489 Eagle Ridge Court
8003339904 (Office)
3489 Eagle Ridge Court
8003339904 (Office)
Resumes
Manager, Ops Technology At Medco
view sourceLocation:
Greater New York City Area
Industry:
Pharmaceuticals
Product Designer
view sourceLocation:
Brooklyn, NY
Industry:
Internet
Work:
Google Aug 2019 - 2013
Product Designer
Warby Parker Aug 2019 - 2013
Design Lead
Hillary For America Jan 2016 - Nov 2016
Lead Product Designer and Manager at Hillary For America
Zendrive Jan 2014 - Jan 2016
Senior Product Designer
Grokker Sep 2012 - Jan 2014
Lead Product Designer
Product Designer
Warby Parker Aug 2019 - 2013
Design Lead
Hillary For America Jan 2016 - Nov 2016
Lead Product Designer and Manager at Hillary For America
Zendrive Jan 2014 - Jan 2016
Senior Product Designer
Grokker Sep 2012 - Jan 2014
Lead Product Designer
Education:
College of Charleston
Bachelors, Bachelor of Business Administration
Bachelors, Bachelor of Business Administration
Skills:
User Interface Design
User Experience
Interaction Design
Art Direction
Information Architecture
Web Design
Mobile Applications
User Centered Design
Html
Css
Javascript
Git
Cascading Style Sheets
User Experience
Interaction Design
Art Direction
Information Architecture
Web Design
Mobile Applications
User Centered Design
Html
Css
Javascript
Git
Cascading Style Sheets
President
view sourceLocation:
Palo Alto, CA
Industry:
Venture Capital & Private Equity
Work:
QED Research
President
Electric Power Research Institute Sep 1979 - Jan 1982
Department Director
President
Electric Power Research Institute Sep 1979 - Jan 1982
Department Director
Education:
Cornell University 1964 - 1967
Ph.D., Economics
Ph.D., Economics
Interests:
Energy Economics
Environmental Economics
Venture Capital
Environmental Economics
Venture Capital
James Plummer
view source
James Plummer
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James Plummer
view sourceIsbn (Books And Publications)
Silicon Vlsi Technology: Fundamentals, Practice and Modeling
view sourceAuthor
James Plummer
ISBN #
0130850373
Strategic Management and Planning for Electric Utilities
view sourceAuthor
James L. Plummer
ISBN #
0138513791
Classmates
James Plummer
view sourceSchools:
Whynot Academy Meridian MS 1972-1976
Community:
Daphne Cottrill, Clay Poole
James Plummer
view sourceSchools:
Dinwiddie Junior High School Dinwiddie VA 1967-1973
Community:
Mike Lehan, Judith Coleman
James Plummer
view sourceSchools:
Portage High School Portage PA 1976-1980
Community:
Janie Diehl, Johanna Shuniak
James Plummer
view sourceSchools:
Mt. Pleasant High School Mt. Pleasant PA 1979-1983
James Plummer
view sourceSchools:
Brownsburg High School Brownsburg IN 1953-1957
Community:
Sheila Dejarnette
James Plummer
view sourceSchools:
Bishop Guilfoyle High School Altoona PA 1995-1999
Community:
Louis Murray, James Klueg, Michael Benton
James Plummer
view sourceSchools:
Kirksville High School Richmond KY 1951-1955
Community:
Joyce Walton, Barbara Grant
James Plummer
view sourceSchools:
Millersburg Military Institute High School Millersburg KY 1946-1950
Community:
David Garlikov, Maribel Talamantez, Rusty Stephens, Robert Mangan
James E Plummer
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James Plummer
view source
Daniel James Plummer
view source
James Samuel Plummer
view source
James Goodfoyosoul Plummer
view source
James Plummer
view source
James W Plummer
view source
James Plummer
view sourceMyspace
Youtube
Flickr
Googleplus
James “Wulf” Plummer
Work:
Frayed Wires Studios - Executive Director (2010)
Relationship:
Single
Bragging Rights:
Founder and Executive Director of Frayed Wires Studios, Lead Developer of the Battlefront: The Clone Wars mod, Battlefront 3 mod, Battlefront: Evolved mod, Shattered Mirror mod, and the Co-Developer of the Mass Effect: Unification mod.
James Plummer
Work:
Home - Internet Marketer, Currency (FOREX) Trader (2001)
James Plummer
James Plummer
James Plummer
James Plummer
James Plummer
James Plummer
News
Rio 2016: N.J. native Ali and Princeton Univ. graduate Cabral make Olympic Team
view source- day for Sam Mattis. The 2012 graduate of East Brunswick High School, who came into the meet with the top throw in the U.S. this year in the discus of 221-3, threw 189-10 and failed to make the final. He wound up ninth overall. James Plummer (Central Reg. High School/Rutgers) placed 8th with a 190-9.
- Date: Jul 08, 2016
- Category: Sports
- Source: Google
Plaxo
James Plummer
view sourceLondonCEO at Prospect James has more than 25 years experience recruiting executive talent for a range of UK and US clients within the information technology and new media sectors... James has more than 25 years experience recruiting executive talent for a range of UK and US clients within the information technology and new media sectors.
He formed and ran software development and publishing company producing a major entertainment title and a desktop interface product.
Over...
James Plummer
view sourceLondonJames has more than 25 years experience recruiting executive talent for a range of UK and US clients within the information technology and new media sectors... James has more than 25 years experience recruiting executive talent for a range of UK and US clients within the information technology and new media sectors.
He formed and ran software development and publishing company producing a major entertainment title and a desktop interface product.
Over...
James Plummer
view sourceRutgers University
James Plummer
view sourcePres. at Comfortmasters
Get Report for James B Plummer from Brooklyn, NY, age ~41