James S Speck

US Patent:

6583436, Jun 24, 2003

Filed:

Jun 27, 2001

Appl. No.:

09/893760

Inventors:

Pierre M. Petroff - Santa Barbara CA
James S. Speck - Goleta CA
Jo Anna Johnson - Novi MI
Hao Lee - Pasadena CA

Assignee:

The Regents of the University of California - Oakland CA

International Classification:

H01L 2906

US Classification:

257 18, 257 15, 257 22, 257 17, 257 14, 438 87, 438184

Abstract:

A method for growing strain-engineered, self-assembled, semiconductor quantum dots (QDs) into ordered lattices. The nucleation and positioning of QDs into lattices is achieved using a periodic sub-surface lattice built-up on a substrate, stressor layer, and spacer layer. The unit cell dimensions, orientation and the number of QDs in the basis are tunable. Moreover, a 2D lattice can be replicated at periodic intervals along the growth direction to form a three-dimensional (3D) lattice of QDs.

US Patent:

6900070, May 31, 2005

Filed:

Apr 15, 2003

Appl. No.:

10/413913

Inventors:

Michael D. Craven - Goleta CA, US
Steven P. Denbaars - Goleta CA, US
James Stephen Speck - Goleta CA, US

Assignee:

The Regents of the University of California - Oakland CA

International Classification:

H01L021/00

US Classification:

438 41, 438481, 257E21108

Abstract:

Lateral epitaxial overgrowth of non-polar (11{overscore (2)}0) a-plane GaN seed layers reduces threading dislocations in the GaN films. First, a thin patterned dielectric mask is applied to the seed layer. Second, a selective epitaxial regrowth is performed to achieve a lateral overgrowth based on the patterned mask. Upon regrowth, the GaN films initially grow vertically through openings in the dielectric mask before laterally overgrowing the mask in directions perpendicular to the vertical growth direction. Threading dislocations are reduced in the overgrown regions by (1) the mask blocking the propagation of dislocations vertically into the growing film and (2) the bending of dislocations through the transition from vertical to lateral growth.

US Patent:

7091514, Aug 15, 2006

Filed:

Apr 15, 2003

Appl. No.:

10/413690

Inventors:

Michael D. Craven - Goleta CA, US
Stacia Keller - Goleta CA, US
Steven P. Denbaars - Goleta CA, US
Tal Margalith - Santa Barbara CA, US
James Stephen Speck - Goleta CA, US
Shuji Nakamura - Santa Barbara CA, US
Umesh K. Mishra - Santa Barbara CA, US

Assignee:

The Regents of the University of California - Oakland CA

International Classification:

H01L 31/072

US Classification:

257 14, 257 11

Abstract:

A method for forming non-polar (Al,B,In,Ga)N quantum well and heterostructure materials and devices. Non-polar ({overscore ()}) a-plane GaN layers are grown on an r-plane ({overscore ()}) sapphire substrate using MOCVD. These non-polar ({overscore ()}) a-plane GaN layers comprise templates for producing non-polar (Al,B,In,Ga)N quantum well and heterostructure materials and devices.

US Patent:

7186302, Mar 6, 2007

Filed:

May 6, 2005

Appl. No.:

11/123805

Inventors:

Arpan Chakraborty - Isla Vista CA, US
Benjamin A. Haskell - Goleta CA, US
Stacia Keller - Goleta CA, US
James Stephen Speck - Goleta CA, US
Steven P. Denbaars - Goleta CA, US
Shuji Nakamura - Santa Barbara CA, US
Umesh Kumar Mishra - Santa Barbara CA, US

Assignee:

The Regents of the University of California - Oakland CA
The Agency of Industrial Science and Technology - Kawaguchi

International Classification:

H01L 29/04

US Classification:

148 33, 438 46, 438 47, 438479, 438938, 257E21113, 257E21463

Abstract:

A method for the fabrication of nonpolar indium gallium nitride (InGaN) films as well as nonpolar InGaN-containing device structures using metalorganic chemical vapor deposition (MOVCD). The method is used to fabricate nonpolar InGaN/GaN violet and near-ultraviolet light emitting diodes and laser diodes.

US Patent:

7208393, Apr 24, 2007

Filed:

May 31, 2005

Appl. No.:

11/140893

Inventors:

Benjamin A. Haskell - Santa Barbara CA, US
Melvin B. McLaurin - Goleta CA, US
Steven P. DenBaars - Goleta CA, US
James Stephen Speck - Goleta CA, US
Shuji Nakamura - Santa Barbara CA, US

Assignee:

The Regents of the University of California - Oakland CA

International Classification:

H01L 21/36
H01L 21/20

US Classification:

438481, 438479, 257E21097

Abstract:

A method of growing highly planar, fully transparent and specular m-plane gallium nitride (GaN) films. The method provides for a significant reduction in structural defect densities via a lateral overgrowth technique. High quality, uniform, thick m-plane GaN films are produced for use as substrates for polarization-free device growth.

US Patent:

7220324, May 22, 2007

Filed:

Mar 10, 2006

Appl. No.:

11/372914

Inventors:

Troy J. Baker - Santa Barbara CA, US
Benjamin A. Haskell - Santa Barbara CA, US
Paul T. Fini - Santa Barbara CA, US
Steven P. DenBaars - Goleta CA, US
James S. Speck - Goleta CA, US
Shuji Nakamura - Santa Barbara CA, US

Assignee:

The Regents of the University of California - Oakland CA

International Classification:

H01L 29/00

US Classification:

148 33, 438 46, 438 47, 438479, 257E21113, 257E21463

Abstract:

A method for growing planar, semi-polar nitride film on a miscut spinel substrate, in which a large area of the planar, semi-polar nitride film is parallel to the substrate's surface. The planar films and substrates are: (1) {10 1} gallium nitride (GaN) grown on a {100} spinel substrate miscut in specific directions, (2) {10 3} gallium nitride (GaN) grown on a {110} spinel substrate, (3) {11 2} gallium nitride (GaN) grown on a {1 00} sapphire substrate, and (4) {10 3} gallium nitride (GaN) grown on a {1 00} sapphire substrate.

US Patent:

7220658, May 22, 2007

Filed:

Jul 15, 2003

Appl. No.:

10/537644

Inventors:

Benjamin A Haskell - Goleta CA, US
Michael D. Craven - Goleta CA, US
Paul T. Fini - Santa Barbara CA, US
Steven P. DenBaars - Goleta CA, US
James S. Speck - Goleta CA, US
Shuji Nakamura - Santa Barbara CA, US

Assignee:

The Regents of the University of California - Oakland CA

International Classification:

H01L 21/20

US Classification:

438481, 257E21097

Abstract:

Lateral epitaxial overgrowth (LEO) of non-polar a-plane gallium nitride (GaN) films by hydride vapor phase epitaxy (HVPE) results in significantly reduced defect density.

US Patent:

7291864, Nov 6, 2007

Filed:

Feb 28, 2005

Appl. No.:

11/067910

Inventors:

Claude C. A. Weisbuch - Paris, FR
Aurelien J. F. David - Paris, FR
James S. Speck - Goleta CA, US
Steven P. DenBaars - Goleta CA, US

Assignee:

The Regents of the University of California - Oakland CA

International Classification:

H01L 29/22

US Classification:

257 98, 257 79, 257435, 257436, 257E33067, 257E51021

Abstract:

A single or multi-color light emitting diode (LED) with high extraction efficiency is comprised of a substrate, a buffer layer formed on the substrate, one or more patterned layers deposited on top of the buffer layer, and one or more active layers formed on or between the patterned layers, for example by Lateral Epitaxial Overgrowth (LEO), and including one or more light emitting species, such as quantum wells. The patterned layers include a patterned, perforated or pierced mask made of insulating, semiconducting or metallic material, and materials filling holes in the mask. The patterned layer acts as an optical confining layer due to a contrast of a refractive index with the active layer and/or as a buried diffraction grating due to variation of a refractive index between the mask and the material filling the holes in the mask.