James D Speck

US Patent:

7691658, Apr 6, 2010

Filed:

Jan 19, 2007

Appl. No.:

11/655573

Inventors:

John F. Kaeding - Mountain View CA, US
Dong-Seon Lee - Anyang-si, KR
Michael Iza - Santa Barbara CA, US
Troy J. Baker - Santa Barbara CA, US
Hitoshi Sato - Santa Barbara CA, US
Benjamin A. Haskell - Santa Barbara CA, US
James S. Speck - Goleta CA, US
Steven P. DenBaars - Goleta CA, US
Shuji Nakamura - Santa Barbara CA, US

Assignee:

The Regents of the University of California - Oakland CA
Japan Science and Technology Agency - Saitama Prefecture

International Classification:

H01L 21/00
H01L 29/00

US Classification:

438 46, 438 41, 438 48, 438481, 438485, 257 12, 257 13, 257 79, 257 86, 257 94, 257E21113, 257E21121, 257E21463

Abstract:

A method for improved growth of a semipolar (Al,In,Ga,B)N semiconductor thin film using an intentionally miscut substrate. Specifically, the method comprises intentionally miscutting a substrate, loading a substrate into a reactor, heating the substrate under a flow of nitrogen and/or hydrogen and/or ammonia, depositing an InGaN nucleation layer on the heated substrate, depositing a semipolar nitride semiconductor thin film on the InGaN nucleation layer, and cooling the substrate under a nitrogen overpressure.

US Patent:

8110482, Feb 7, 2012

Filed:

Feb 22, 2010

Appl. No.:

12/710181

Inventors:

John F. Kaeding - Mountain View CA, US
Dong-Seon Lee - Anyang-Si, KR
Michael Iza - Santa Barbara CA, US
Troy J. Baker - Santa Barbara CA, US
Hitoshi Sato - Kanagawa, JP
Benjamin A. Haskell - Santa Barbara CA, US
James S. Speck - Goleta CA, US
Steven P. DenBaars - Goleta CA, US
Shuji Nakamura - Santa Barbara CA, US

Assignee:

The Regents of the University of California - Oakland CA
Japan Science and Technology Agency - Saitama Prefecture

International Classification:

H01L 21/20
H01L 21/36

US Classification:

438478, 438479, 438604, 438775, 257200, 257201, 257628, 257E21113

Abstract:

A method for improved growth of a semipolar (Al,In,Ga,B)N semiconductor thin film using an intentionally miscut substrate. Specifically, the method comprises intentionally miscutting a substrate, loading a substrate into a reactor, heating the substrate under a flow of nitrogen and/or hydrogen and/or ammonia, depositing an InGaN nucleation layer on the heated substrate, depositing a semipolar nitride semiconductor thin film on the InGaN nucleation layer, and cooling the substrate under a nitrogen overpressure.

US Patent:

8368179, Feb 5, 2013

Filed:

Dec 6, 2011

Appl. No.:

13/311986

Inventors:

John F. Kaeding - Mountain View CA, US
Dong-Seon Lee - Anyang-Si, KR
Michael Iza - Santa Barbara CA, US
Troy J. Baker - Raleigh NC, US
Hitoshi Sato - Kanagawa, JP
Benjamin A. Haskell - Santa Barbara CA, US
James S. Speck - Goleta CA, US
Steven P. DenBaars - Goleta CA, US
Shuji Nakamura - Santa Barbara CA, US

Assignee:

The Regents of the University of California - Oakland CA
Japan Science and Technology Agency - Saitama Prefecture

International Classification:

H01L 29/20

US Classification:

257615, 257E3306, 257E29089, 438 22, 117 84

Abstract:

A method for improved growth of a semipolar (Al,In,Ga,B)N semiconductor thin film using an intentionally miscut substrate. Specifically, the method comprises intentionally miscutting a substrate, loading a substrate into a reactor, heating the substrate under a flow of nitrogen and/or hydrogen and/or ammonia, depositing an InGaN nucleation layer on the heated substrate, depositing a semipolar nitride semiconductor thin film on the InGaN nucleation layer, and cooling the substrate under a nitrogen overpressure.

US Patent:

8390011, Mar 5, 2013

Filed:

Jun 4, 2010

Appl. No.:

12/793862

Inventors:

Claude C. A. Weisbuch - Paris, FR
Aurelien J. F. David - Palo Alto CA, US
James S. Speck - Goleta CA, US
Steven P. DenBaars - Goleta CA, US

Assignee:

The Regents of the University of California - Oakland CA

International Classification:

H01L 29/22

US Classification:

257 98, 257 79, 257431, 257435, 257E33067, 438 22

Abstract:

An opto-electronic device, and a method of fabricating same, wherein the device has a patterned layer that includes a patterned, pierced or perforated mask, and an active layer formed over the patterned layer, wherein a refractive index of the patterned layer and a pattern of holes in the patterned layer are configured for controlling confinement or extraction of light emissions of the active layer into radiative and guided modes.

US Patent:

20130099180, Apr 25, 2013

Filed:

Oct 24, 2012

Appl. No.:

13/659389

Inventors:

The Regents of the University of California - Oakland CA, US
Paul M. von Dollen - Santa Barbara CA, US
James S. Speck - Goleta CA, US
Shuji Nakamura - Santa Barbara CA, US

Assignee:

The Regents of the University of California - Oakland CA

International Classification:

C30B 7/10

US Classification:

25251914, 117 71, 117224

Abstract:

Alkaline-earth metals are used to reduce impurity incorporation into a Group-III nitride crystal grown using the ammonothermal method.

US Patent:

20130099202, Apr 25, 2013

Filed:

Oct 24, 2012

Appl. No.:

13/659125

Inventors:

The Regents of the University of California - Oakland CA, US
Shuji Nakamura - Santa Barbara CA, US
Steven P. DenBaars - Goleta CA, US
James Stephen Speck - Goleta CA, US

Assignee:

THE REGENTS OF THE UNIVERSITY OF CALIFORNIA - Oakland CA

International Classification:

H01L 29/15
H01L 21/20

US Classification:

257 14, 438504, 257E29078, 257E2109

Abstract:

An (AlInGaN) based semiconductor device, including one or more (In,Al)GaN layers overlying a semi-polar or non-polar III-nitride substrate or buffer layer, wherein the substrate or buffer employs patterning to influence or control extended defect morphology in layers deposited on the substrate; and one or more (AlInGaN) device layers above and/or below the (In,Al)GaN layers.

US Patent:

20130100978, Apr 25, 2013

Filed:

Oct 24, 2012

Appl. No.:

13/659191

Inventors:

The Regents of the University of California - Oakland CA, US
Po Shan Hsu - Arcadia CA, US
Steven P. DenBaars - Goleta CA, US
James Stephen Speck - Goleta CA, US
Shuji Nakamura - Santa Barbara CA, US

Assignee:

THE REGENTS OF THE UNIVERSITY OF CALIFORNIA - Oakland CA

International Classification:

H01L 29/201
H01S 5/343
H01L 33/04

US Classification:

372 45012, 257 15, 257 13, 257E29168, 257E33032

Abstract:

An (Al,In,B,Ga)N based device including a plurality of (Al,In,B,Ga)N layers overlying a semi-polar or non-polar GaN substrate, wherein the (Al,In,B,Ga)N layers include at least a defected layer, a blocking layer, and an active region, the blocking layer is between the active region and the defected layer of the device, and the blocking layer has a larger band gap than surrounding layers to prevent carriers from escaping the active region to the defected layer. One or more (AlInGaN) device layers are above and/or below the (Al,In,B,Ga)N layers. Also described is a nonpolar or semipolar (Al,In,B,Ga)N based optoelectronic device including at least an active region, wherein stress relaxation (Misfit Dislocation formation) is at heterointerfaces above and/or below the active region.

US Patent:

20130126828, May 23, 2013

Filed:

Dec 18, 2012

Appl. No.:

13/718152

Inventors:

THE REGENTS OF THE UNIVERSITY OF CALIFORNIA - Oakland CA, US
Zhen Chen - Goleta CA, US
James S. Speck - Goleta CA, US
Steven P. DenBaars - Goleta CA, US
Shuji Nakamura - Santa Barbara CA, US

Assignee:

THE REGENTS OF THE UNIVERSITY OF CALIFORNIA - Oakland CA

International Classification:

H01L 33/30

US Classification:

257 13

Abstract:

A high-power and high-efficiency light emitting device with emission wavelength (λ) ranging from 280 nm to 360 nm is fabricated. The new device structure uses non-polar or semi-polar AlInN and AlInGaN alloys grown on a non-polar or semi-polar bulk GaN substrate.