Jan Spitz

US Patent:

6515302, Feb 4, 2003

Filed:

Apr 12, 2000

Appl. No.:

09/446683

Inventors:

Michael R. Melloch - West Lafayette IN
Jayarama Shenoy - Fremont CA
Jan Spitz - West Lafayette IN

Assignee:

Purdue Research Foundation - West Lafayette IN

International Classification:

H01L 310312

US Classification:

257 77, 257341, 257343, 257347, 257350, 257352, 257370, 438135, 438140

Abstract:

An insulated gate field effect transistor is disclosed. The transistor includes a semi-insulating silicon carbide substrate, an epitaxial layer of silicon carbide layer adjacent the semi-insulating substrate for providing a drift region having a first conductivity type, and source and drain regions in the epitaxial layer having the same conductivity type as the drift region. A channel region is in the epitaxial layer, has portions between the source and the drain regions, and has the opposite conductivity type from the source and drain regions. The transistor includes contacts to the epitaxial layer for the source, drain and channel regions, an insulating layer over the channel region of the epitaxial layer, and a gate contact adjacent the insulating layer and the channel region.