Jane Yang Chang

US Patent:

6884719, Apr 26, 2005

Filed:

Mar 19, 2002

Appl. No.:

10/101539

Inventors:

Jane Chang - Los Angeles CA, US
Avishai Kepten - D.N. Bikaht Beit Cerem, IL
Michael Sendler - Boise ID, US
Sagy Levy - Sunnyvale CA, US
Robin Bloom - Petaluma CA, US

Assignee:

Mattson Technology, Inc. - Fremont CA
The Regents of the University of California - Oakland CA

International Classification:

H01L021/31
H01L021/469

US Classification:

438681, 438680, 438785, 427585

Abstract:

A method for depositing a high-k dielectric coating onto a substrate, such as a semiconductor wafer, is provided. The substrate is subjected to one or more reaction cycles. For instance, in a typical reaction cycle, the substrate is heated to a certain deposition temperature. Thereafter, in one embodiment, one or more reactive organo-metallic gas precursors are supplied to the reactor vessel. An oxidizing gas is also supplied to the substrate at a certain oxidizing temperature to oxidize and/or densify the layers. As a result, a metal oxide coating is formed that has a thickness equal to at least about one monolayer, and in some instances, two or more monolayers. The dielectric constant of the resulting metal oxide coating is often greater than about 4, and in some instance, is from about 10 to about 80.

US Patent:

7544398, Jun 9, 2009

Filed:

Apr 26, 2006

Appl. No.:

11/411425

Inventors:

Jane P. Chang - Los Angeles CA, US
Trinh Tu Van - Portland OR, US
Tony Chiang - Campbell CA, US
Chandra Deshpandey - Fremont CA, US
Karl Lesser - San Jose CA, US

Assignee:

The Regents of the Univesity of California - Los Angeles CA

International Classification:

H05H 1/24

US Classification:

427537, 437539, 117 84, 117108

Abstract:

The invention relates to methods for producing doped thin layers on substrates comprising the steps of depositing a dopant precursor on the substrate via an atomic layer deposition technique; and exposing the deposited dopant precursor to radicals. The methods can further comprise depositing a compound adjacent the dopant metal via an atomic layer deposition technique; and exposing the deposited compound to radicals, thereby providing a host. The invention relates to articles comprising approximately atomically thin layers of metals or metal oxides doped with at least one different metal or metal oxide. This abstract is intended as a scanning tool for purposes of searching in the particular art and is not intended to be limiting of the present invention.

US Patent:

20060110531, May 25, 2006

Filed:

Apr 26, 2005

Appl. No.:

11/115027

Inventors:

Jane Chang - Los Angeles CA, US
Avishai Kepten - Camon, IL
Michael Sendler - Boise ID, US
Sagy Levy - Sunnyvale CA, US
Robin Bloom - Petaluma CA, US

International Classification:

C23C 16/00

US Classification:

427248100

Abstract:

A method for depositing a high-k dielectric coating onto a substrate, such as a semiconductor wafer, is provided. The substrate is subjected to one or more reaction cycles. For instance, in a typical reaction cycle, the substrate is heated to a certain deposition temperature. Thereafter, in one embodiment, one or more reactive organo-metallic gas precursors are supplied to the reactor vessel. An oxidizing gas is also supplied to the substrate at a certain oxidizing temperature to oxidize and/or densify the layers. As a result, a metal oxide coating is formed that has a thickness equal to at least about one monolayer, and in some instances, two or more monolayers. The dielectric constant of the resulting metal oxide coating is often greater than about 4, and in some instance, is from about 10 to about 80.

US Patent:

20160035990, Feb 4, 2016

Filed:

Mar 13, 2014

Appl. No.:

14/775079

Inventors:

- Oakland CA, US
Yang Yang - Los Angeles CA, US
Jane Chang - Los Angeles CA, US

International Classification:

H01L 51/44
H01L 51/42

Abstract:

Core/shell resonant light absorption and scattering materials and methods incorporated into active layers for increasing the short circuit current and photo conversion efficiency of organic photovoltaic systems are provided. In particular, resonant light absorption and scattering methods and materials for improving the efficiency (short circuit current Qsc) and photo conversion efficiency (PCE)) of organic photovoltaic polymer systems (OPV) that include multilayer nano structures having a noble metal core and a passivated and functionalized outer shell disposed with the active layer of the OPV in the form of nanospheres and nanorods have been synthesized, characterized and incorporated into the active layers of OPV devices to enhance light absorption through plasmonic light trapping (PLT). In some embodiments the peak extinction wavelength of the nanoparticles is designed to coincide with the wavelength region of the OPV band edge in order to ensure that light trapping is occurring at wavelengths of poor absorption. In other embodiments, a second shell consisting of an optically active material is deposited onto the nanoparticles, the material being selected such that the extinction peak of the core of the nanoparticles is designed to coincide with the emission peak of the rare earth energy transition in order to increase the spontaneous emission rate at that wavelength by taking advantage of the Purcell effect.