Jane Yang

US Patent:

20130109721, May 2, 2013

Filed:

Dec 8, 2010

Appl. No.:

13/514343

Inventors:

Kevin Sprott - Needham MA, US
John Jeffrey Talley - St. Louis MO, US
Jane Yang - Boxborough MA, US
Bo Peng - Arlington MA, US

Assignee:

Ironwood Pharmaceuticals, Inc. - Cambridge MA

International Classification:

C07D 401/12
A61K 31/403
C07D 495/04
A61K 45/06
A61K 31/4439
C07D 207/333
A61K 31/40
C07D 209/52
A61K 31/407

US Classification:

514338, 548516, 514412, 548453, 5462767, 514339, 5462781, 5462791, 514343, 548540, 514423

Abstract:

The present disclosure relates to N-benzyl pyrrole compounds of formula (I) useful as inhibitors of the enzyme Fatty Acid Amide Hydrolase (FAAH). The disclosure also provides pharmaceutically acceptable compositions comprising the compounds of the disclosure and methods of using the compositions in the treatment or prevention of various disorders.

US Patent:

20130178475, Jul 11, 2013

Filed:

Mar 10, 2011

Appl. No.:

13/635597

Inventors:

Joel Moore - Lexington MA, US
James Jia - Somerville MA, US
Takashi Nakai - Newton MA, US
Charles Kim - Cambridge MA, US
Thomas Wai-Ho Lee - Lexington MA, US
Jane Yang - Andover MA, US

Assignee:

IRONWOOD PHARMACEUTICALS, INC. - Cambridge MA

International Classification:

C07D 495/04
C07D 401/14
C07D 403/04
C07D 413/14
C07D 471/04
C07D 401/04

US Classification:

514245, 514256, 514303, 514338, 544207, 544296, 544333, 546119, 5462757

Abstract:

Compounds of Formula I are described. They are useful as stimulators of sGC, particularly NO-independent, heme-dependent stimulators. These compounds may be useful for treating, preventing or managing various disorders that are herein disclosed.

US Patent:

48961957, Jan 23, 1990

Filed:

Mar 14, 1988

Appl. No.:

7/168067

Inventors:

Michael Jansen - Los Angeles CA
Moshe Sergant - Culver City CA
Szutsun S. Ou - Manhattan CA
Jaroslava Z. Wilcox - Los Angeles CA
Jane J. Yang - Los Angeles CA
Larry R. Eaton - Huntington Beach CA

Assignee:

TRW Inc. - Redondo Beach CA

International Classification:

H01L 3300
H01S 319

US Classification:

357 17

Abstract:

A semiconductor diode structure including a light-absorbing substrate, an active region, and a pair of cladding layers surrounding the active region. Lasing is inhibited by means of an inclined end facet, which reflects light down into the substrate, where it is absorbed, to provide only one pass of the spontaneously emitted light through the active region. One disclosed embodiment has a conventional end facet for the out-coupling of edge-emitted light. Another embodiment includes a surface-emitting facet formed in an opening in the substrate adjacent to the inclined facet. Yet another embodiment has two inclined facets. One inclined facet may serve to reflect light into the absorbing substrate, or both may serve to reflect light through separate surface emitting facets.

US Patent:

48688398, Sep 19, 1989

Filed:

Mar 14, 1988

Appl. No.:

7/168066

Inventors:

William W. Simmons - Rancho Palos Verdes CA
Michael Jansen - Los Angeles CA
Jaroslava Z. Wilcox - Los Angeles CA
Jane J. Yang - Los Angeles CA

Assignee:

TRW Inc. - Redondo Beach CA

International Classification:

H01S 319
H01S 308

US Classification:

372 50

Abstract:

An array of semiconductor lasers formed in a single substrate and having parallel waveguides that terminate in a wide diffraction region fabricated with the array structure. The diffraction region has a curved reflective surface selected to achieve a desired degree of coupling among the elements of the array, and to enhance and stabilize a preferred lateral mode of oscillation.

US Patent:

52532631, Oct 12, 1993

Filed:

Mar 12, 1992

Appl. No.:

7/850083

Inventors:

Michael Jansen - Los Angeles CA
Jane J. Yang - Los Angeles CA
Szutsun S. Ou - Manhattan Beach CA
Thomas J. Roth - Redondo Beach CA

Assignee:

TRW Inc. - Redondo Beach CA

International Classification:

H01S 319

US Classification:

372 45

Abstract:

A surface-emitting semiconductor injection laser for use in fabricating high-power two-dimensional monolithic laser arrays. The surface-emitting semiconductor laser includes a substrate and an active layer and a pair of cladding layers formed on the substrate. A folded resonator cavity is formed by highly-reflective 45. degree. and 90. degree. micromirrors that are etched at either end of the active layer and by a partially-reflective reflector that is positioned between the 45. degree. micromirror and the substrate for outcoupling the laser light from the resonator cavity. The semiconductor laser is mounted junction down on a heat sink to position the active layer close to the heat sink for good heat dissipation at high power levels. In one preferred embodiment of the present invention, the substrate is optically opaque and an opening is etched in the substrate for outcoupling the laser light. In another preferred embodiment of the invention, the substrate is optically transparent and a microlens is formed on the substrate to collimate the laser light.

US Patent:

52767000, Jan 4, 1994

Filed:

Mar 12, 1992

Appl. No.:

7/849911

Inventors:

Michael Jansen - Los Angeles CA
Dan Botez - Redondo Beach CA
Luke J. Mawst - Torrance CA
Thomas J. Roth - Redondo Beach CA
Jane J. Yang - Los Angeles CA

Assignee:

TRW Inc. - Redondo Beach CA

International Classification:

H01S 319

US Classification:

372 50

Abstract:

This invention discloses a semiconductor laser incorporating a plurality of resonant optical waveguide array cells. In each of the resonant optical waveguide array cells, leaky waveguide elements are coupled together such that radiation leaked from one antiguide element is coupled with radiation propagating along another antiguide element across an interelement region. As the radiation propagates through the array it is reflected at each end of the array until it builds up enough optical gain to reach lasing threshold. Then, radiation is leaked from the sides of each array such that this radiation can impinge other resonant optical waveguide arrays and be coupled with these arrays in phase to develop a laser beam having a higher intensity than can be achieved with a single array semiconductor laser.

US Patent:

48212784, Apr 11, 1989

Filed:

Apr 2, 1987

Appl. No.:

7/033304

Inventors:

Jane J. Yang - Los Angeles CA

Assignee:

TRW Inc. - Redondo Beach CA

International Classification:

H01S 319

US Classification:

372 46

Abstract:

A semiconductor laser structure having the same advantages as a channeled substrate planar laser, but without the difficulties of fabrication associated with this structure. The structure includes a substrate, a planar first cladding layer, a planar active layer, and a second cladding layer in which a mesa region is formed. A blocking layer is formed over the second cladding layer and electrical contact is made through the blocking layer in the region of the mesa. The blocking layer functions to confine current flow in the mesa region and to provide index-guiding of light in the mesa region. Because of its simple geometry, the structure can be conveniently formed using a desirable fabrication process, such as metalorganic chemical vapor deposition (MOCVD). In one disclosed embodiment of the invention, the mesa is broadened to include at least one intermediate ledge on each side of a central pedestal. This reduces the abruptness of the change in effective index of refraction encountered by the laser light, and reduces astigmatism in the resultant beam.

US Patent:

50254510, Jun 18, 1991

Filed:

Oct 20, 1989

Appl. No.:

7/424424

Inventors:

Michael Jansen - Los Angeles CA
Moshe Sergant - Culver City CA
Szutsun S. Ou - Manhattan Beach CA
Jaroslava Z. Wilcox - Los Angeles CA
Jane J. Yang - Los Angeles CA
Larry R. Eaton - Huntington Beach CA

Assignee:

TRW Inc. - Redondo Beach CA

International Classification:

H01S 319

US Classification:

372 50

Abstract:

A two-dimensional integrated laser array having a plurality of surface-emitting laser arrays and a plurality of waveguides for optically coupling the individual laser arrays together. Each surface-emitting laser array includes a plurality of injection lasers which are evanescently coupled together in order to emit a single beam of light. The coupling provided by the waveguides causes the surface-emitting laser arrays to operate in phase and at the same wavelength as an external master oscillator. Therefore, the surface-emitting laser arrays generate coherent beams of light, which are combined and focused by a micro-lens. The output of the micro-lens is a single, coherent high-power optical beam which is emitted perpendicular to the two-dimensional integrated laser array.