Jason B Barrett

US Patent:

59904860, Nov 23, 1999

Filed:

Nov 21, 1997

Appl. No.:

8/976061

Inventors:

Eric B. Chen - Billerica MA
Chien-Chung Chen - Dracut MA
Alfred A. Donatelli - Medford MA
Antonio Morales - Somerville MA
Jason Barrett - Chelmsford MA
William W. Bannister - Chelmsford MA

Assignee:

University of Massachusetts - Boston MA

International Classification:

G01N 1506

US Classification:

250573

Abstract:

The invention features an apparatus and method for determining and controlling the concentration of a solute in a solute stream by measuring the concentration of an indicator agent.

US Patent:

20210398971, Dec 23, 2021

Filed:

Jun 17, 2020

Appl. No.:

16/903961

Inventors:

- Lowell MA, US
John Stephen Atherton - Acton MA, US
Wayne Mack Struble - Franklin MA, US
Jason Matthew Barrett - Amherst NH, US
Nishant R. Yamujala - Somerville MA, US

International Classification:

H01L 27/06
H01L 29/16
H01L 29/20
H01L 23/528
H01L 23/522

Abstract:

Examples of integrated semiconductor devices are described. In one example, an integrated device includes first and second transistors formed on a substrate, where the transistors share a terminal metal feature to reduce a size of the integrated device. The terminal metal feature can include a shared source electrode metalization, for example, although other electrode metalizations can be shared. In other aspects, a first width of a gate of the first transistor can be greater than a second width of a gate of the second transistor, and the shared metalization can taper from the first width to the second width. The integrated device can also include a metal ground plane on a backside of the substrate, and the terminal metal feature can also include an in-source via for the shared source electrode metalization. The in-source via can electrically couple the shared source electrode metalization to the metal ground plane.

US Patent:

20210359092, Nov 18, 2021

Filed:

May 14, 2020

Appl. No.:

16/874098

Inventors:

- Lowell MA, US
Wayne Mack Struble - Franklin MA, US
Jason Matthew Barrett - Amherst NH, US
Nishant R. Yamujala - Somerville MA, US
John Stephen Atherton - Acton MA, US

International Classification:

H01L 29/417
H01L 29/40
H01L 29/423
H01L 29/778
H01L 29/20

Abstract:

Various embodiments are disclosed for improved and structurally optimized transistors, such as RF power amplifier transistors. A transistor may include a drain metal portion raised from a surface of a substrate, a drain metal having a notched region, a gate manifold body with angled gate tabs extending from the gate manifold, and/or a source-connected shielding. The transistor may include a high-electron-mobility transistor (HEMT), a gallium nitride (GaN)-on-silicon transistor, a GaN-on-silicon-carbide transistor, or other type of transistor.