Jason R Gomez

US Patent:

60966521, Aug 1, 2000

Filed:

Nov 3, 1997

Appl. No.:

8/963438

Inventors:

David K. Watts - Austin TX
Janos Farkas - Austin TX
Jason Gomez - Austin TX
Chelsea Dang - Pflugerville TX

Assignee:

Motorola, Inc. - Schaumburg IL

International Classification:

H01L 2100

US Classification:

438692

Abstract:

A method of CMP of the semiconductor device where the method comprises the sequential steps of providing a semiconductor device, forming a copper layer on the semiconductor device and planarizing the copper layer with a medium. The medium comprises an abrasive component and a chemical solution. The chemical solution comprises water, an oxidizing agent, a first coordinating ligand adapted to form a complex with Cu(I) and a second coordinating ligand adapted to form a complex with Cu(II).

US Patent:

58973753, Apr 27, 1999

Filed:

Oct 20, 1997

Appl. No.:

8/954190

Inventors:

David Watts - Austin TX
Rajeev Bajaj - San Jose CA
Sanjit Das - Austin TX
Janos Farkas - Austin TX
Chelsea Dang - Plugerville TX
Melissa Freeman - Round Rock TX
Jaime A. Saravia - Round Rock TX
Jason Gomez - Austin TX
Lance B. Cook - Austin TX

Assignee:

Motorola, Inc. - Schaumburg IL

International Classification:

B24B 100

US Classification:

438693

Abstract:

A method for chemical mechanical polishing (CMP) a copper layer (22) begins by forming the copper layer (22). The copper layer (22) is then exposed to a slurry (24). The slurry (24) contains an oxidizing agent such as H. sub. 2 O. sub. 2, a carboxylate salt such as ammonium citrate, an abrasive slurry such as alumna abrasive, an optional triazole or triazole derivative, and a remaining balance of a solvent such as deionized water. The use of the slurry (24) polishes the copper layer (22) with a high rate of removal whereby pitting and corrosion of the copper layer (22) is reduced and good copper interconnect planarity is achieved. This slurry (24) has good selectivity of copper to oxide, and results in copper devices which have good electrical performance. In addition, disposal of the slurry (24) is not environmentally difficult since the slurry (24) is environmentally sound when compared to other prior art slurries.