Jason B Jackson

US Patent:

20150136231, May 21, 2015

Filed:

Dec 9, 2014

Appl. No.:

14/565288

Inventors:

- San Jose CA, US
Jason Todd Jackson - Hattiesburg MS, US

International Classification:

H01L 31/18
H01L 31/032

US Classification:

136262, 438 95

Abstract:

A method for fabricating a thin film photovoltaic device is provided. The method includes providing a substrate comprising a surface region made of a thin-film photovoltaic absorber including copper, indium, gallium, selenium, and sulfur species. Additionally, the method includes applying a dip-in chemical bath deposition process for forming a buffer layer containing at least zinc-oxygen-sulfide material but substantially free of cadmium species. Furthermore, the method includes producing a chemical bath including steps of heating a bath of water to about 75 C., adding aqueous ammonia to mix with the bath of water, adding a solution of sodium hydroxide , adding zinc salt solution, and adding a solution of thiourea. The dip-in chemical bath deposition process includes immersing a plurality of substrates formed with the thin-film photovoltaic absorber substantially vertically in the chemical bath for 30 minutes to form the zinc-oxygen-sulfide buffer layer followed by a cleaning and drying process.

US Patent:

20140308774, Oct 16, 2014

Filed:

Jan 14, 2014

Appl. No.:

14/155143

Inventors:

- San Jose CA, US
Jason Todd Jackson - Hattiesburg MS, US

Assignee:

Stion Corporation - San Jose CA

International Classification:

H01L 31/18

US Classification:

438 95

Abstract:

A method for fabricating a thin film photovoltaic device is provided. The method includes providing a substrate comprising a surface region made of a thin-film photovoltaic absorber including copper, indium, gallium, selenium, and sulfur species. Additionally, the method includes applying a dip-in chemical bath deposition process for forming a buffer layer containing at least zinc-oxygen-sulfide material but substantially free of cadmium species. Furthermore, the method includes producing a chemical bath including steps of heating a bath of water to about 75 C., adding aqueous ammonia to mix with the bath of water, adding a solution of sodium hydroxide, adding zinc salt solution, and adding a solution of thiourea. The dip-in chemical bath deposition process includes immersing a plurality of substrates formed with the thin-film photovoltaic absorber substantially vertically in the chemical bath for 30 minutes to form the zinc-oxygen-sulfide buffer layer followed by a cleaning and drying process.