Jason N Jewell

US Patent:

20190272994, Sep 5, 2019

Filed:

May 14, 2019

Appl. No.:

16/412328

Inventors:

- Sunnyvale CA, US
Jason M. JEWELL - Santa Clara CA, US
Chaowei WANG - San Diego CA, US
Ji WU - San Jose CA, US
Emmett Edward PERL - Santa Clara CA, US
Claudio Andrés CAÑIZARES - Morgan Hill CA, US
Ling ZHANG - Saratoga CA, US
Brendan M. KAYES - Los Gatos CA, US

International Classification:

H01L 21/02
C30B 25/02
C30B 25/10
C30B 25/18
C30B 29/42

Abstract:

Aspects of the disclosure relate to processes for epitaxial growth of III-V compound of (Al)GaInP material at high rates, such as about 8 μm/hr, 10 μm/hr, 20 μm/hr, 30 μm/hr, 40 μm/hr, and 8-120 μm/hr deposition rates. The high growth-rate deposited (Al)InGaP materials or films may be utilized in solar, semiconductor, or other electronic device applications. The Group III/V materials may be formed or grown on a sacrificial layer disposed on or over the support substrate during a chemical vapor deposition process. Subsequently, the Group III/V materials may be removed from the support substrate during an epitaxial lift off (ELO) process. The Group III/V materials are thin films of epitaxially grown layers containing gallium aluminum indium phosphide, gallium indium phosphide, derivatives thereof, alloys thereof, or combinations thereof.