Jason A Mcdonald

US Patent:

20170317072, Nov 2, 2017

Filed:

Jul 12, 2017

Appl. No.:

15/648211

Inventors:

- Phoenix AZ, US
Prasad VENKATRAMAN - Gilbert AZ, US
Zia HOSSAIN - Tempe AZ, US
Chun-Li LIU - Scottsdale AZ, US
Jason MCDONALD - Gilbert AZ, US
Ali SALIH - Mesa AZ, US
Alexander YOUNG - Scottsdale AZ, US

Assignee:

SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC - Phoenix AZ

International Classification:

H01L 27/06
H01L 21/8258
H01L 23/367
H01L 27/02
H01L 27/02
H01L 29/417
H01L 21/74
H01L 27/06
H01L 29/10
H01L 29/778
H01L 29/872
H01L 23/48
H01L 29/20
H01L 29/861

Abstract:

A cascode switch structure includes a group III-V transistor structure having a first current carrying electrode, a second current carrying electrode and a first control electrode. A semiconductor MOSFET device includes a third current carrying electrode electrically connected to the second current carrying electrode, a fourth current carrying electrode electrically connected to the first control electrode, and a second control electrode. A first diode includes a first cathode electrode electrically connected to the first current carrying electrode and a first anode electrode. A second diode includes a second anode electrode electrically connected to the first anode electrode and a second cathode electrode electrically connected to the fourth current carrying electrode. In one embodiment, the group III-V transistor structure, the first diode, and the second diode are integrated within a common substrate.

US Patent:

20170309617, Oct 26, 2017

Filed:

Jul 12, 2017

Appl. No.:

15/648264

Inventors:

- Phoenix AZ, US
Prasad VENKATRAMAN - Gilbert AZ, US
Zia HOSSAIN - Tempe AZ, US
Chun-Li LIU - Scottsdale AZ, US
Woochul JEON - Phoenix AZ, US
Jason MCDONALD - Gilbert AZ, US

Assignee:

SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC - Phoenix AZ

International Classification:

H01L 27/06
H01L 21/8258
H01L 23/367
H01L 27/02
H01L 27/02
H01L 29/417
H01L 21/74
H01L 27/06
H01L 29/10
H01L 29/778
H01L 29/872
H01L 23/48
H01L 29/20
H01L 29/861

Abstract:

In one embodiment, a cascode rectifier structure includes a group III-V semiconductor structure includes a heterostructure disposed on a semiconductor substrate. A first current carrying electrode and a second current carrying electrode are disposed adjacent a major surface of the heterostructure and a control electrode is disposed between the first and second current carrying electrode. A rectifier device is integrated with the group III-V semiconductor structure and is electrically connected to the first current carrying electrode and to a third electrode. The control electrode is further electrically connected to the semiconductor substrate and the second current path is generally perpendicular to a primary current path between the first and second current carrying electrodes. The cascode rectifier structure is configured as a two terminal device.

US Patent:

20170025336, Jan 26, 2017

Filed:

Jul 6, 2016

Appl. No.:

15/202826

Inventors:

- Phoenix AZ, US
Prasad Venkatraman - Gilbert AZ, US
Ali Salih - Mesa AZ, US
Mihir Mudholkar - Tempe AZ, US
Chun-Li Liu - Scottsdale AZ, US
Jason McDonald - Gilbert AZ, US

Assignee:

Semiconductor Components Industries, LLC - Phoenix AZ

International Classification:

H01L 23/495
H01L 23/00

Abstract:

In accordance with an embodiment, a semiconductor component includes a support having a first device receiving structure and a second device receiving structure and a contact extension that is common to the first and second device receiving structures. The first device receiving structure includes a device receiving area and the second device receiving structure includes a drain contact area. A III-N based semiconductor chip has a drain bond pad bonded to the drain contact area and a source bond pad bonded to the contact extension and a gate bond pad bonded to an interconnect. A portion of the silicon based semiconductor chip is bonded to the support device receiving area. In accordance with another embodiment, a method for manufacturing the semiconductor component includes coupling a III-N based semiconductor chip to a portion of the support a silicon based semiconductor chip to another portion of the support.

US Patent:

20160322969, Nov 3, 2016

Filed:

Apr 20, 2016

Appl. No.:

15/133644

Inventors:

- Phoenix AZ, US
Prasad VENKATRAMAN - Gilbert AZ, US
Peter MOENS - Erwetegem, BE
Mihir MUDHOLKAR - Tempe AZ, US
Joe FULTON - Chandler AZ, US
Philip CELAYA - Gilbert AZ, US
Stephen ST. GERMAIN - Scottsdale AZ, US
Chun-Li LIU - Scottsdale AZ, US
Jason MCDONALD - Scottsdale AZ, US
Alexander YOUNG - Scottsdale AZ, US
Ali SALIH - Mesa AZ, US

Assignee:

SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC - Phoenix AZ

International Classification:

H03K 17/687
H01L 25/11
H01L 29/778

Abstract:

A half-bridge circuit can include a high-side HEMT, a high-side switch transistor, a low-side HEMT, and a low-side switch transistor. The die substrates of the HEMTs can be coupled to the sources of their corresponding switch transistors. In another aspect, a packaged electronic device for a half-bridge circuit can have a design that can use shorter connectors that help to reduce parasitic inductance and resistance. In a further aspect, a packaged electronic device for a half-bridge circuit can include more than one connection along the bottom of the package allows less lead connections along the periphery of the packaged electronic device and can allow for a smaller package.

US Patent:

20160118379, Apr 28, 2016

Filed:

Sep 14, 2015

Appl. No.:

14/853729

Inventors:

- Phoenix AZ, US
Prasad VENKATRAMAN - Gilbert AZ, US
Zia HOSSAIN - Tempe AZ, US
Chun-Li LIU - Scottsdale AZ, US
Woochul JEON - Phoenix AZ, US
Jason MCDONALD - Gilbert AZ, US

Assignee:

SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC - Phoenix AZ

International Classification:

H01L 27/06
H01L 23/535
H01L 29/872
H01L 29/778
H01L 29/205

Abstract:

In one embodiment, a cascode rectifier structure includes a group III-V semiconductor structure includes a heterostructure disposed on a semiconductor substrate. A first current carrying electrode and a second current carrying electrode are disposed adjacent a major surface of the heterostructure and a control electrode is disposed between the first and second current carrying electrode. A rectifier device is integrated with the group III-V semiconductor structure and is electrically connected to the first current carrying electrode and to a third electrode. The control electrode is further electrically connected to the semiconductor substrate and the second current path is generally perpendicular to a primary current path between the first and second current carrying electrodes.

US Patent:

20160118490, Apr 28, 2016

Filed:

Sep 14, 2015

Appl. No.:

14/853720

Inventors:

- Phoenix AZ, US
Prasad VENKATRAMAN - Gilbert AZ, US
Zia HOSSAIN - Tempe AZ, US
Chun-Li LIU - Scottsdale AZ, US
Jason MCDONALD - Gilbert AZ, US
Ali SALIH - Mesa AZ, US
Alexander YOUNG - Scottsdale AZ, US

Assignee:

SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC - Phoenix AZ

International Classification:

H01L 29/778
H01L 27/02

Abstract:

In one embodiment, a group III-V transistor structure includes a heterostructure disposed on a semiconductor substrate. A first current carrying electrode and a second current carrying electrode are disposed adjacent a major surface of the heterostructure and a control electrode is disposed between the first and second current carrying electrode. A clamping device is integrated with the group III-V transistor structure and is electrically connected to the first current carrying electrode a third electrode to provide a secondary current path during, for example, an electrical stress event.