Jason G Porter

US Patent:

7284231, Oct 16, 2007

Filed:

Dec 21, 2004

Appl. No.:

11/018637

Inventors:

Kevin D. Lucas - Meylan, FR
Robert E. Boone - Grenoble, FR
Mehul D. Shroff - Austin TX, US
Kirk J. Strozewski - Round Rock TX, US
Chi-Min Yuan - Austin TX, US
Jason T. Porter - Austin TX, US

Assignee:

Freescale Semiconductor, Inc. - Austin TX

International Classification:

G06F 17/50

US Classification:

716 21, 716 19

Abstract:

A method for improving manufacturability of a design includes performing space or enclosure checks on multiple interacting layers of a layout design and then using the resulting space or enclosure data to move predetermined feature edges in an altered design database to decrease the risk of features widths, feature spaces or feature enclosures being patterned smaller than designed. In some embodiments, the upsized features are larger in the wafer circuit pattern than are drawn in a designed database. The method for improving manufacturability of a design, in some embodiments, is stored on a computer readable storage medium.

US Patent:

7826597, Nov 2, 2010

Filed:

Dec 9, 2005

Appl. No.:

11/298001

Inventors:

Earl A. Berner - Wylie TX, US
Kristina Robinson - San Antonio TX, US
Mark Magnusson - Mount Prospect IL, US
Jason Porter - Frisco TX, US
James Rushing - McKinney TX, US
Mark Welch - San Antonio TX, US

Assignee:

AT&T Intellectual Property I, L.P. - Reno NV

International Classification:

H04M 1/24
H04M 3/08

US Classification:

379 101, 379 9, 379 1001, 379 1002, 379 1003

Abstract:

Methods and apparatus to handle support contacts in a call center are disclosed. An example method for handling a first contact to a support center includes receiving the first contact from a first person, receiving a first identifier associated with the first person, analyzing contact details for a second contact associated with a second identifier associated with a second person different from the first person to determine if a problem associated with the first identifier exists, and indicating that a problem associated with the first identifier exists if the contact details for the second contact associated with the second identifier indicate that a problem associated with the first identifier exists.

US Patent:

20090125953, May 14, 2009

Filed:

Apr 16, 2008

Appl. No.:

12/104147

Inventors:

JASON C. PORTER - FRISCO TX, US
KENNETH WINBURN - WEATHERFORD TX, US

Assignee:

AT&T KNOWLEDGE VENTURES, L.P. - RENO NV

International Classification:

H04N 7/173

US Classification:

725109, 715719, 725114, 725118, 725144

Abstract:

Systems, methods and graphical user interfaces monitoring an Internet Protocol Television (IPTV) network are provided. A particular method includes receiving IPTV process data. The IPTV process data includes information about a plurality of processes executing at a plurality of servers of an IPTV distribution network. The method also includes analyzing the IPTV process data to determine process operational information. The process operational information is descriptive of the operation of at least a first process of the plurality of processes and operation of at least a second process of the plurality of processes. The method also includes generating a display based on the operational information. The display includes an aggregate display element representing the operation of the at least one first process and the operation of the at least one second process.

US Patent:

20120329234, Dec 27, 2012

Filed:

Jun 22, 2011

Appl. No.:

13/166561

Inventors:

Jason T. Porter - Austin TX, US
Dmitri Kulik - Cedar Park TX, US

International Classification:

H01L 21/336

US Classification:

438303, 257E21409

Abstract:

A method includes forming a gate over a substrate having a semiconductor layer comprising silicon. The gate has a sidewall spacer on sides of the gate. The gate has a gate length less than or equal to 50 nanometers. The gate is formed of polysilicon. A cobalt layer is formed on a top of the gate and the sidewall spacer. A titanium nitride layer is formed on the cobalt layer. The titanium nitride layer has a thickness over the gate in a range of 10 to 14 nanometers. An anneal is performed to form a cobalt silicide layer on the top of the gate and leave cobalt on the sidewall spacer. An etchant is applied that etches cobalt and titanium nitride selective to cobalt silicide to the titanium nitride layer. The cobalt is on the sidewall spacer and the cobalt silicide layer. An anneal is performed to increase conductivity of the cobalt silicide layer.

Address:

7415 Albert Rd, Austin, TX 78745

Phone:

5124481382

VIN:

3TMJU62N47M033482

Make:

TOYOTA

Model:

TACOMA

Year:

2007